Renesas SLG59H1313C

Overview

SLG59H1313C from Renesas Electronics is a 23 mΩ, 4.5 A n-channel load switch IC with integrated surge protection (IEC61000-4-5 >100 V), adjustable over-voltage protection (4–20 V), and fast 50 ns OVP response time. It operates from 2.5 V to 20 V input, features thermal shutdown at 145°C, and delivers power sequencing and fault protection in wearable and mobile power rails.

For engineers reviewing the SLG59H1313C datasheet, SLG59H1313C pinout, SLG59H1313C application, or SLG59H1313C equivalent, this page provides verified electrical parameters, WLCSP package layout guidance, PG signal behavior under VIN stability, and real-world OVP threshold configuration using external resistors - all critical for low-voltage system power integrity design.

Technical Context

The SLG59H1313C integrates a low-R_DSON nFET switch with internal clamp circuitry enabling 100 V surge tolerance and precise over-voltage lockout via an externally adjustable OVLO pin. Its logic-controlled ON input drives gate driver and charge pump circuitry to manage turn-on/turn-off timing with soft-start (30 ms) and debounce (15 ms) functions.

Protection architecture combines fast OVP (50 ns response), 7 A over-current detection, and thermal shutdown (145°C with 20°C hysteresis). The open-drain PG output asserts low only when VIN remains within both minimum (2.5 V) and OVLO thresholds - providing unambiguous power-good status without external supervision.

Key Specifications

Pinout & Package

SLG59H1313C uses a 12-ball, 1.3 mm × 1.8 mm, 0.4 mm pitch WLCSP package with three IN and three OUT ball contacts for low-inductance, high-current routing and thermal dissipation. Pin A1 is marked with laser index.

Key Features

Applications

Availability

SLG59H1313C is available at Aetrix Electronics and suitable for wearable devices, smartphone power sequencing, and tablet peripheral management requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SLG59H1313C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and consumer applications.

The SLG59H1313C belongs to Renesas' GreenFET family of intelligent load switches, designed specifically for ultra-compact, high-reliability power management in battery-powered mobile and wearable systems.

FAQ

What is the maximum input voltage rating for SLG59H1313C?

The SLG59H1313C has an absolute maximum input voltage rating of 29 Vdc, with recommended operating range up to 20 Vdc. Its internal clamp circuit protects downstream circuitry from surges exceeding 100 V per IEC61000-4-5, but continuous operation above 20 V is not specified in the datasheet. Always maintain VIN ≤ 20 V for reliable long-term function of SLG59H1313C.

How does the PG pin behave when VIN exceeds the OVP threshold?

When VIN rises above the configured OVLO threshold, the SLG59H1313C immediately disables the internal FET and places the PG pin in high-impedance state - it neither pulls low nor sources current. This deassertion signals loss of valid input power to the host system. PG only drives low when VIN is confirmed stable between 2.5 V and the active OVLO threshold, ensuring SLG59H1313C delivers unambiguous power-good status.

Can SLG59H1313C be used without external resistors on the OVLO pin?

Yes - connecting the OVLO pin directly to GND configures SLG59H1313C to use its internal 6.5 V (typ) over-voltage lockout threshold. This eliminates external components for basic protection, while retaining full functionality including PG assertion, thermal shutdown, and OCP. The internal threshold is factory-trimmed and specified across temperature (-40°C to 85°C) per the SLG59H1313C datasheet.

What is the purpose of the three IN and three OUT ball contacts on SLG59H1313C?

The triple IN (B3, C2, C3) and triple OUT (A2, A3, B2) ball configuration in SLG59H1313C reduces current density per contact, lowers effective trace inductance, and improves thermal dissipation - critical for sustaining 4.5 A continuous current in a 2.34 mm² WLCSP footprint. Each group shares the same net, enabling robust power delivery without vias or complex fanout, and directly supports the 23 mΩ R_DSON specification under real-world PCB layout conditions.

Does SLG59H1313C support reverse current blocking during shutdown?

No - SLG59H1313C does not include active reverse current blocking. When disabled (ON = high), the internal nFET is off but its body diode remains forward-biased if V_OUT > V_IN, permitting reverse conduction up to 1.8 A DC. For applications requiring reverse blocking, an external pFET or dedicated reverse-current protection IC must be added upstream or downstream of SLG59H1313C.