Renesas SLG59M1746C

Overview

SLG59M1746C from Renesas Electronics is a single-channel, high-side nFET load switch optimized for ultra-low-power, space-constrained Li-ion applications. It delivers 1 A continuous current with 17.6 mΩ R_DS(ON) at 3.0 V V_DD/1.5 V V_IN, operates from 2.7–3.6 V V_DD and 0.25–1.5 V V_IN, and consumes < 0.5 µA quiescent supply current after startup - enabling use in fitness bands and smartwatches where standby power and footprint are critical.

For engineers reviewing the SLG59M1746C datasheet, SLG59M1746C pinout, SLG59M1746C application, or SLG59M1746C equivalent, this page provides verified technical context, validated pin functions, confirmed operating boundaries (including controlled inrush current and fast V_OUT discharge), and real-world selection guidance against comparable load switches for portable battery-powered systems.

Technical Context

The SLG59M1746C implements a proprietary nFET architecture with integrated gate control to achieve stable R_DS(ON) across its full V_DD (2.7–3.6 V) and V_IN (0.25–1.5 V) ranges, eliminating need for external biasing. Its active-HIGH ON pin features internal 8 MΩ pull-down and CMOS-compatible thresholds (V_IL < 0.3 V, V_IH > 0.85 V), enabling direct interfacing with microcontroller GPIOs without level-shifting.

Unlike conventional load switches, it enforces a linear V_OUT slew rate (0.20–0.55 V/ms) during turn-on to limit inrush current to ≤20 mA with up to 30 µF C_LOAD, while providing 160–210 Ω internal V_OUT discharge resistance for rapid output discharge upon turn-off - all without over-temperature or over-current protection circuitry.

Key Specifications

Pinout & Package

SLG59M1746C is housed in a Pb-free, halogen-free 6-pin Wafer-Level Chip-Scale Package (WLCSP) measuring 0.71 mm × 1.16 mm × 0.5 mm with 0.35 mm pitch. The package uses laser-marked top-side orientation with Pin A1 index mark.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar load switch applications.

Compared with TPL7407LDR and TPS22916BLYFPR, SLG59M1746C uniquely combines sub-1 V V_IN operation, < 0.5 µA post-startup current, and 17.6 mΩ R_DS(ON) in a 0.82 mm² package - making it the only viable option for space- and power-constrained 1 A loads powered from buck-boost or LDOs delivering < 1.5 V.

Availability

SLG59M1746C is available at Aetrix Electronics and suitable for smartphones, fitness bands, smart watches, and tablet PCs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging for consumer electronics manufacturing.

Supply support for SLG59M1746C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The SLG59M1746C belongs to Renesas' GreenFET family of ultra-low-power load switches, designed specifically for battery-operated wearables and portable devices demanding minimal standby current, precise inrush control, and ultra-compact packaging.

FAQ

What is the maximum continuous current rating for the SLG59M1746C?

The SLG59M1746C is rated for 1 A continuous current under specified thermal conditions. This rating assumes proper PCB layout with adequate copper area on VIN and VOUT pads, ambient temperature ≤ 85 °C, and VDD = 3.0 V. At 85 °C junction temperature, R_DS(ON) rises to 22 mΩ, resulting in ~22 mW conduction loss per amp - well within the device's thermal capability when mounted on standard FR4 with recommended 0.25 in² copper pads.

Does the SLG59M1746C include over-temperature or over-current protection?

No, the SLG59M1746C does not include over-temperature shutdown, over-current limiting, or reverse-current blocking. It is a basic high-side nFET load switch with controlled turn-on slew rate and fast VOUT discharge. System-level protection must be implemented externally using fuses, current-sense amplifiers, or upstream PMIC features - consistent with its design goal of minimizing die area and quiescent current for ultra-low-power applications.

What is the minimum V_IN voltage supported by the SLG59M1746C?

The SLG59M1746C supports V_IN as low as 0.25 V, verified across the full -40 °C to 85 °C temperature range. This enables direct connection to sub-1 V logic rails (e.g., 0.8 V core supplies or 1.2 V I/O domains) without level-shifting circuitry. Operation below 0.25 V is not characterized and may result in undefined R_DS(ON) or incomplete turn-on.

How does the SLG59M1746C achieve its ultra-low quiescent current?

The SLG59M1746C achieves < 0.5 µA quiescent supply current after startup through proprietary low-leakage MOSFET design and optimized internal bias networks. Unlike conventional load switches that maintain active gate drive circuitry continuously, SLG59M1746C transitions to a near-zero static current state once the nFET is fully enhanced - verified across 2.7–3.6 V VDD and all temperatures. This is critical for multi-year battery life in always-on wearables.

Can the ON pin of the SLG59M1746C be driven directly from a 1.8 V microcontroller GPIO?

Yes, the ON pin of the SLG59M1746C is CMOS-compatible with V_IH > 0.85 V and V_IL < 0.3 V, making it fully compatible with 1.8 V logic levels. Its internal 8 MΩ pull-down eliminates need for external resistors, allowing direct connection to any general-purpose output (GPO) without additional components. No level-shifter or voltage translator is required.