Renesas SLG59M307V

Overview

SLG59M307V from Renesas Electronics is a single-channel load switch IC with 7.8 mΩ R_DS(ON), 4 A continuous current rating, and integrated discharge function, operating across 1.5 V to 5.5 V input rails. It features user-adjustable slew rate via external capacitor on the CAP pin and supports logic-level ON control down to 0.85 V CMOS, targeting power rail switching in space-constrained portable electronics.

For engineers reviewing the SLG59M307V datasheet, SLG59M307V pinout, SLG59M307V application, or SLG59M307V equivalent, this page delivers verified specifications, validated pin functions, real-world timing behavior (e.g., 1.96 ms total turn-on with 4 nF CSLEW), thermal limits (θ_JA = 85 °C/W), and direct alternatives for notebook, tablet, and smartphone power sequencing designs.

Technical Context

The SLG59M307V integrates an n-channel MOSFET with fused drain (pins 2–4) and source (pins 5–6) terminals, driven by an internal charge pump enabling operation below 1.5 V logic thresholds. Its linear ramp control architecture uses the CAP pin to set VS slew rate (3.0 V/ms typical with 4 nF), directly limiting inrush current into capacitive loads up to 500 µF.

It implements active discharge via a 100–300 Ω internal resistor between S and GND when OFF, ensuring rapid load voltage collapse. The device requires strict power-up sequencing (VDD before VD, then ON toggle) and mandates low-ESR bypassing at VDD (≥0.1 µF), D (≥0.1 µF, ≥10 V rated), and S (consult CLOAD range) to meet timing and thermal specs.

Key Specifications

Pinout & Package

SLG59M307V is packaged in an 8-pin FC-TDFN (1.5 × 2.0 mm, JEDEC MO-252), with fused pins: two for Drain (pins 2–4), two for Source (pins 5–6), and dedicated VDD, ON, CAP, and GND terminals. Thermal performance relies on copper pad area under D and S terminals per layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar load switch applications.

Compared with TPS22916BLY and NIS5020AN, SLG59M307V uniquely balances ultra-low 7.8 mΩ R_DS(ON), 0.85 V logic compatibility, and integrated discharge in a thermally optimized 1.5 × 2.0 mm package-making it optimal for high-current, space-constrained, and fast-power-cycle applications where both inrush control and rail collapse are mandatory.

Availability

SLG59M307V is available at Aetrix Electronics and suitable for notebook power rail switching, tablet power rail switching, and smartphone power rail switching requiring stable component supply and consistent GreenFET performance across production volumes.

Supply support for SLG59M307V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT markets.

The SLG59M307V belongs to Renesas' GreenFET family-designed specifically for high-efficiency, ultra-compact load switching in battery-powered portable electronics with stringent thermal and timing constraints.

FAQ

What is the maximum continuous current rating for the SLG59M307V?

The SLG59M307V supports 4 A continuous current at ambient temperatures up to 70 °C, assuming proper PCB copper area per layout guidelines and thermal derating based on its 85 °C/W junction-to-ambient thermal resistance. At 70 °C ambient and 4 A load, junction temperature reaches approximately 114 °C (PD = 7.8 mΩ × 4² = 124.8 mW; TJ = 124.8 mW × 85 °C/W + 70 °C), remaining within absolute maximum ratings.

How does the CAP pin affect SLG59M307V turn-on behavior?

The CAP pin on the SLG59M307V sets the slew rate and total turn-on time via an external ceramic capacitor to GND. With a 4 nF capacitor, typical slew rate is 3.0 V/ms and total turn-on time is 1.96 ms into a 10 µF load. Increasing CSLEW slows the ramp, reducing inrush current; decreasing it accelerates turn-on but risks exceeding safe dI/dt limits for downstream capacitors.

Does SLG59M307V include integrated discharge functionality, and how is it implemented?

Yes, SLG59M307V includes integrated active discharge via an internal 100–300 Ω resistor between the S (source) terminal and GND. When the ON pin is driven low, this resistor rapidly collapses the output voltage across CLOAD-e.g., discharging 10 µF in under 15 µs-eliminating the need for external discharge components and simplifying board design.

What is the minimum logic-high voltage required to activate SLG59M307V via the ON pin?

The SLG59M307V requires ON_VIH > 0.85 V to guarantee activation across temperature and process corners, making it compatible with 0.85 V CMOS I/O standards. Its ON_VIL < 0.3 V ensures noise margin, and the internal ~4 MΩ pull-down maintains OFF state when the pin is un-driven. This eliminates level shifters in low-voltage SoC interfaces.

What package type and dimensions does SLG59M307V use, and how does it impact thermal performance?

SLG59M307V uses an 8-lead FC-TDFN package measuring 1.5 × 2.0 × 0.75 mm (JEDEC MO-252), with fused drain (pins 2–4) and source (pins 5–6) terminals. Its 85 °C/W θ_JA is measured using 1 in² copper pads under D and S terminals on FR4; thermal performance degrades significantly without adhering to recommended layout guidelines, especially copper area and trace width.