Diodes Incorporated SMAZ8V2-13

Overview

SMAZ8V2-13 from Diodes Incorporated is a 1.0W surface-mount Zener diode with nominal zener voltage 8.2V (±5%), 2.0mA test current, 200Ω maximum zener impedance at I_ZT, and 6.0µA maximum reverse leakage at 5.0V. It features SMA package, cathode band polarity marking, and is rated for -65°C to +150°C operation in power regulation and voltage reference circuits.

For engineers reviewing the SMAZ8V2-13 datasheet, SMAZ8V2-13 pinout, SMAZ8V2-13 application, or SMAZ8V2-13 equivalent, key selection criteria include zener voltage tolerance, thermal resistance (R_θJA = 100°C/W), power derating above +50°C, and compliance with RoHS, halogen-free, and antimony-free "Green" requirements.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage across load variations, with specified regulation at I_ZT = 2.0mA and V_Z = 8.2V (min 7.79V, max 8.61V). Its 1.0W power dissipation is thermally limited by R_θJA = 100°C/W on FR-4 PCB per Diodes Inc. layout.

The device exhibits low dynamic impedance (Z_ZT ≤ 200Ω) and tight leakage control (I_R ≤ 6.0µA @ V_R = 5.0V), enabling precision clamping and reference functions in compact DC power rails and signal conditioning paths.

Key Specifications

Pinout & Package

Package: SMA (Surface Mount Assembly), molded plastic case, UL 94V-0 flammability rating, cathode indicated by band. Dimensions: 4.00–4.60mm length (B), 2.29–2.92mm width (A), 1.27–1.63mm height (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX84-C8V2 and 1N4736A, SMAZ8V2-13 delivers optimal balance of SMT manufacturability, 1.0W power capability, and thermal performance (R_θJA = 100°C/W) for mid-power surface-mount voltage regulation.

Availability

SMAZ8V2-13 is available at Aetrix Electronics and suitable for DC power rail protection, voltage reference for ADC bias, LED current regulation, and signal level translation requiring stable component supply and RoHS-compliant sourcing.

Supply support for SMAZ8V2-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SMAZ series belongs to Diodes Inc.'s surface-mount Zener diode product line, engineered for high-reliability voltage regulation and clamping in space-constrained, high-volume industrial and automotive applications.

FAQ

What is the maximum reverse voltage (V_R) at which leakage current is guaranteed?

The datasheet specifies maximum reverse current I_R ≤ 6.0µA at V_R = 5.0V. This is not a breakdown rating but a leakage test condition - the device is designed to operate in reverse breakdown at its rated V_Z = 8.2V, and leakage at voltages below V_Z remains tightly controlled per the Electrical Characteristics table.

Can SMAZ8V2-13 be used in parallel for higher power dissipation?

No - Zener diodes exhibit negative temperature coefficient and mismatched V_Z tolerances, causing current hogging and thermal runaway when paralleled. For >1.0W regulation, use a single higher-rated Zener or switch to an active shunt regulator topology with current-sharing control.

Is the SMA package lead-free and compatible with standard Pb-free reflow profiles?

Yes - SMAZ8V2-13 has matte tin plating, complies with RoHS Directive 2011/65/EU, and is qualified for soldering per MIL-STD-202, Method 208. Its moisture sensitivity level is 1, permitting exposure to ambient conditions indefinitely without baking prior to reflow.

How does thermal derating affect usable power at 85°C ambient?

Per Figure 1, power dissipation must be linearly derated above +50°C at 10.0mW/°C. At T_A = 85°C, allowable P_D = 1.0W − (85−50) × 0.01W = 0.65W. This reflects junction temperature limits imposed by R_θJA = 100°C/W on the reference PCB layout.