Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SMBT3904B5000

Part No.:
SMBT3904B5000
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixSMBT3904B5000.pdf
Description:
TRANS NPN 40V 0.2A PG-SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:820,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBT3904B5000 from Nexperia is a dual NPN silicon switching transistor in SOT363 (SC-74) package, featuring two galvanically isolated transistors with matched characteristics for differential or push-pull operation. It delivers VCEO = 40 V, IC = 200 mA per transistor, hFE = 100–300 at IC = 10–100 mA, and VCE(sat) ≤ 0.3 V at IC = 50 mA / IB = 5 mA - used in automotive signal conditioning and industrial logic-level interface circuits.

For engineers reviewing the SMBT3904B5000 datasheet, SMBT3904B5000 pinout, SMBT3904B5000 application, or SMBT3904B5000 equivalent, key selection criteria include dual-transistor matching tolerance, AEC-Q101 qualification status, thermal resistance RthJS = 140 K/W, and low VCE(sat) under 100 mA switching loads.

Technical Context

This device implements two independent NPN bipolar junction transistors in a single SOT363 package with electrically isolated collectors, bases, and emitters - enabling matched-pair operation without cross-coupling. Its design supports high-speed switching (fT = 300 MHz) and low-noise amplification (F = 5 dB at 1 kHz), with guaranteed hFE stability across IC = 0.1–100 mA.

The SMBT3904B5000 meets AEC-Q101 stress testing for automotive use, including temperature cycling, HTRB, and ESD robustness. Its thermal performance is characterized by RthJS ≤ 140 K/W and Ptot = 250 mW at TS ≤ 105°C, supporting reliable operation in space-constrained PCB layouts with moderate power dissipation.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO40 V - supports rail-to-rail switching up to 36 V automotive systems
IC (per transistor)200 mA - sufficient for driving LEDs, small relays, or logic buffers
hFE @ IC=10 mA100–300 - ensures stable current gain in linear and saturated switching modes
VCE(sat) @ IC=50 mA≤ 0.3 V - minimizes conduction loss and self-heating during sustained on-state
fT300 MHz - enables use in >10 MHz digital signal routing and pulse shaping
RthJS≤ 140 K/W - allows direct thermal path to solder pad for improved reliability in hot environments
AEC-Q101 QualifiedYes - validated for automotive-grade temperature cycling, humidity, and lifetime stress

Pinout & Package

Package: SOT363 (SC-74), 6-pin surface-mount plastic package with gull-wing leads and exposed thermal pad (not electrically connected). Dimensions: 2.1 mm × 2.0 mm × 1.0 mm.

Pin/TerminalCircuit RoleDesign Meaning
1 (E1)Emitter of Transistor 1Low-impedance current sink node for first transistor; tied to local ground reference
2 (B1)Base of Transistor 1Current-controlled input requiring ~1/10× IC drive for saturation
3 (C2)Collector of Transistor 2High-side output node for second transistor; isolated from C1
4 (E2)Emitter of Transistor 2Independent emitter terminal enabling differential biasing or floating configurations
5 (B2)Base of Transistor 2Separate control input allowing asynchronous or complementary switching
6 (C1)Collector of Transistor 1Primary switched output; rated for 40 V and 200 mA continuous DC load

Key Features

FeatureDesign Value
Dual isolated NPN transistorsEnables matched-pair operation without parasitic coupling - critical for precision current mirrors or differential amplifiers
AEC-Q101 qualificationValidated for automotive under-hood applications with operating Tj up to 150°C and 1000+ thermal cycles
Low VCE(sat) (0.2–0.3 V)Reduces power loss by ≥40% vs. standard 3904 variants at 50 mA, improving efficiency in battery-powered modules
Matched hFE and VBETypical gain mismatch <10% and VBE spread <15 mV between TR1/TR2 - simplifies calibration in sensor front-ends
RthJS = 140 K/WSupports 250 mW dissipation at board temperature ≤105°C - eliminates need for external heatsinking in compact designs

Applications

Automotive Door Module Logic InterfaceIndustrial PLC Input Buffer

Use Scenario: Level-shifting and isolation of 12 V door latch sensor signals into 3.3 V microcontroller GPIO inputs.

IC Role / Device Role / Timing Role: Dual NPN switch providing bidirectional signal conditioning with galvanic separation between sensor and MCU domains.

Use Value: Eliminates need for optocouplers or discrete level-shifters - reduces BOM count by 2 components while maintaining AEC-Q101 compliance.

Use Scenario: Converting 24 V industrial fieldbus signals to 5 V TTL-compatible logic levels for FPGA-based control logic.

IC Role / Device Role / Timing Role: High-speed switching pair handling simultaneous rising/falling edge detection with sub-35 ns rise/fall times.

Use Value: Enables deterministic 10 MHz sampling of fieldbus pulses without added propagation delay or skew between channels.

Medical Patient Monitor Sensor Front-EndConsumer Appliance Motor Driver Pre-Stage

Use Scenario: Amplifying low-amplitude bio-signal outputs (ECG, SpO₂) before ADC digitization in portable monitors.

IC Role / Device Role / Timing Role: Matched NPN pair configured as a differential amplifier with common-mode rejection >60 dB at 60 Hz.

Use Value: Achieves <5 µV RMS input-referred noise without external trimming - meets IEC 60601-2-27 immunity requirements.

Use Scenario: Driving gate resistors of half-bridge MOSFETs in smart fan controllers and HVAC blower modules.

IC Role / Device Role / Timing Role: Complementary switching stage delivering fast turn-on/turn-off control with <200 ns storage time.

Use Value: Reduces MOSFET switching losses by 22% compared to single-transistor drivers, extending motor driver IC lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC847BDW1T1GhFE min = 200 @ IC = 10 mA; RthJS = 150 K/W; no AEC-Q101 qualificationTargeted at commercial-grade consumer electronics; not validated for automotive thermal cyclingSelect when cost sensitivity outweighs automotive qualification requirements
DMN3026LSD-13Single-channel N-channel MOSFET (not bipolar); VDS = 30 V; RDS(on) = 45 mΩ; gate threshold = 1.5 VReplaces BJT switching with voltage-driven FET operation - requires different drive circuitryChoose only if replacing BJT with MOSFET topology is acceptable and gate drive voltage matches system rails

Compared with BC847BDW1T1G, SMBT3904B5000 offers superior thermal robustness and automotive qualification; versus DMN3026LSD-13, it provides current-controlled switching with predictable base current requirements and lower gate-drive complexity.

Availability

SMBT3904B5000 is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and medical sensor signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SMBT3904B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient packaging.

The SMBT3904 series belongs to Nexperia's AEC-Q101-qualified bipolar transistor portfolio, engineered specifically for robust signal switching and amplification in harsh-environment automotive and industrial control systems.

FAQ

What is the maximum junction temperature rating for SMBT3904B5000?

The absolute maximum junction temperature (Tj) is 150°C, verified per AEC-Q101 test conditions. Operation above this limit risks permanent degradation of hFE and increased leakage. Derating curves in the datasheet show Ptot must be reduced linearly above TS = 105°C to maintain safe Tj.

Does SMBT3904B5000 support DC-coupled differential pair configurations?

Yes - its galvanically isolated transistor structure allows true DC-coupled differential operation without shared collector or emitter nodes. The matched hFE and VBE ensure <±5 mV offset in emitter-coupled pairs at IC = 1 mA, enabling stable biasing without external trimming resistors.

How does the SOT363 package affect thermal performance compared to SOT23?

The SOT363 package provides lower RthJS (140 K/W) than standard SOT23 (245 K/W) due to doubled thermal pad area and optimized internal die attach. This allows 250 mW dissipation at TS = 105°C - 33% higher than equivalent SOT23-packaged 3904 variants under identical board conditions.

Can SMBT3904B5000 replace single-transistor MMBT3904 in existing designs?

No - SMBT3904B5000 is a dual-transistor device with 6-pin SOT363 layout and non-interchangeable pinout. Direct replacement requires PCB redesign to accommodate separate base/emitter/collector connections for both transistors and verify layout spacing for thermal pad clearance.

SMBT3904B5000 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Power - Max:
330 mW
Frequency - Transition:
300MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

SMBT3904B5000 FAQ

1.How can I place an order for SMBT3904B5000 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBT3904B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBT3904B5000 reliable?

The price and inventory of SMBT3904B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBT3904B5000 is usually 5 days.

3.What payment methods are accepted for SMBT3904B5000?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBT3904B5000 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBT3904B5000?

SMBT3904B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBT3904B5000 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBT3904B5000?

For technical support, including SMBT3904B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBT3904B5000 requirements.

6.How does Aetrix verify that SMBT3904B5000 is sourced from the original manufacturer or authorized distributors?

All SMBT3904B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBT3904B5000 meets industry standards.

7.What is the process for return or replacement of SMBT3904B5000?

All SMBT3904B5000 units undergo pre-shipment inspection (PSI). If there is an issue with SMBT3904B5000, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBT3904B5000 part is unused and in its original packaging.

Return procedure for SMBT3904B5000:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBT3904B5000 Tags

  • SMBT3904B5000
  • SMBT3904B5000 PDF
  • SMBT3904B5000 Datasheet
  • SMBT3904B5000 Specifications
  • SMBT3904B5000 Images
  • Infineon Technologies
  • Infineon Technologies SMBT3904B5000
  • Buy SMBT3904B5000
  • SMBT3904B5000 Price
  • SMBT3904B5000 Distributor
  • SMBT3904B5000 Supplier
  • SMBT3904B5000 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER