Infineon Technologies SMBTA56E6327HTSA1

Overview

SMBTA56E6327HTSA1 from Infineon Technologies is a PNP silicon small-signal transistor in SOT-23 package, rated for V_CEO = 80 V, I_C = 500 mA, and P_tot = 330 mW at T_S ≤ 79 °C, with h_FE ≥ 100 at I_C = 10 mA and V_CE = 1 V. It delivers low V_CE(sat) = 0.25 V (I_C = 100 mA, I_B = 10 mA) and supports automotive-grade switching in discrete bias networks and level-shifting circuits.

For engineers reviewing the SMBTA56E6327HTSA1 datasheet, SMBTA56E6327HTSA1 pinout, SMBTA56E6327HTSA1 application, or SMBTA56E6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, complementary pairing with SMBTA06 (NPN), thermal resistance R_thJS ≤ 215 K/W, and guaranteed h_FE performance across −50 °C to +150 °C junction temperature range.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC gain (h_FE) and breakdown limits. Its V_(BR)CEO = 80 V and V_(BR)CBO = 80 V support high-voltage switching in low-power analog and digital interface stages, while V_BE(ON) ≤ 1.2 V (I_C = 100 mA) ensures predictable base drive requirements.

Designed for stable operation up to T_j = 150 °C, it features low C_cb = 7 pF (V_CB = 10 V) and f_T = 100 MHz (I_C = 20 mA, V_CE = 5 V), enabling use in medium-frequency amplification and fast-switching applications where parasitic capacitance must be minimized.

Key Specifications

Pinout & Package

Package: SOT-23 (TO-236AB), surface-mount, 3-pin plastic case with standard footprint per Infineon outline drawing EHs BCW66. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with MMBTA56-7-F, SMBTA56E6327HTSA1 offers identical performance with AEC-Q101 certification and standardized 180 mm reel packaging; versus BC807-40, it trades higher voltage rating for lower gain, making it the sole choice for 80 V automotive switching where reliability under stress is mandatory.

Availability

SMBTA56E6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and consumer power supply feedback circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for SMBTA56E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global R&D and manufacturing infrastructure.

SMBTA56 belongs to Infineon's legacy bipolar transistor product line designed specifically for robust, high-reliability discrete switching and amplification in automotive and industrial environments.

FAQ

Is SMBTA56E6327HTSA1 pin-compatible with SMBTA06?

No-SMBTA56E6327HTSA1 is a PNP transistor with pinout Base–Emitter–Collector (1–2–3), while SMBTA06 is its NPN complement with pinout Emitter–Base–Collector (1–2–3). They share the same SOT-23 package outline but opposite polarity and pin mapping; direct substitution without circuit redesign will cause functional failure.

What is the maximum continuous power dissipation at 100 °C ambient?

At T_A = 100 °C, derating applies: P_tot drops linearly from 330 mW at T_S = 79 °C. Using R_thJS ≤ 215 K/W and assuming T_j(max) = 150 °C, maximum allowable P_tot ≈ 230 mW. This value assumes proper PCB copper area and no forced airflow.

Does this part support pulsed operation beyond 500 mA?

Yes-peak collector current I_CM = 1 A is specified for pulse width t_p ≤ 10 ms with duty cycle D < 2%. Pulse capability is validated via permissible pulse load curves showing P_tot(max)/P_tot(DC) = 5× at t_p = 100 µs, enabling short-duration surge handling in protection circuits.

Can SMBTA56E6327HTSA1 be used in linear amplifier configurations?

Yes-it exhibits stable h_FE across I_C = 1 mA to 100 mA and has documented f_T = 100 MHz, supporting small-signal Class-A amplification up to ~10 MHz. However, thermal limitations restrict sustained linear operation above ~100 mW; bias stability must account for V_BE drift over temperature.