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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies SMBTA64E6327

Name: SMBTA64E6327
Brand: Infineon Technologies
SKU: SMBTA64E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SMBTA64E6327

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SMBTA64E6327.pdf

Description:: TRANS PNP DARL 30V 0.5A PG-SOT23

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Product details

Overview

SMBTA64E6327 from Infineon Technologies is a PNP silicon Darlington transistor in SOT-23 package, designed for high-gain switching and amplification in low-power analog and digital control circuits. It delivers DC current gain (h_FE) of 10,000–20,000 at I_C = 10 mA, V_CE = 5 V; V_CE_SAT ≤ 1.5 V at I_C = 100 mA, I_B = 0.1 mA; and maximum collector current of 500 mA - enabling robust signal-level load driving in space-constrained industrial sensor interfaces.

For engineers reviewing the SMBTA64E6327 datasheet, SMBTA64E6327 pinout, SMBTA64E6327 application, or SMBTA64E6327 equivalent, key selection considerations include its Darlington configuration for ultra-high h_FE, SOT-23 thermal performance (R_thJS ≤ 210 K/W), V_CES = 30 V rating, and suitability for base-driven logic-level interfacing with microcontrollers.

Technical Context

This device integrates two cascaded PNP transistors in a monolithic Darlington pair, delivering exponential current gain while maintaining single-base control. Its structure enables low base drive requirements (I_B ≤ 100 mA) and supports fast switching up to f_T = 125 MHz at I_C = 50 mA, V_CE = 5 V - suitable for pulse-width modulated (PWM) load control and analog signal amplification stages.

The SOT-23 package provides standardized surface-mount compatibility with defined thermal resistance (R_thJS ≤ 210 K/W) and junction temperature limit of 150 °C. Electrical characteristics are specified across −65 °C to +150 °C storage range, with guaranteed V_(BR)_CES ≥ 30 V and V_(BR)_EBO ≥ 10 V under standard test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	30 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in low-voltage switching applications.
h_FE	10,000–20,000 - Ultra-high DC current gain at I_C = 10 mA; reduces required base drive current by >99% vs. single transistor.
V_CE_SAT	≤1.5 V at I_C = 100 mA, I_B = 0.1 mA - Low saturation voltage minimizes power loss in linear and switching modes.
f_T	125 MHz at I_C = 50 mA, V_CE = 5 V - Enables use in high-frequency signal amplification and fast-switching PWM drivers.
P_tot	330 mW at T_S = 81 °C - Total dissipation limit under defined board thermal condition; constrains continuous output power in SOT-23 layout.
R_thJS	≤210 K/W - Junction-to-soldering-point thermal resistance; informs PCB copper area and thermal via requirements for reliability.

Pinout & Package

Package: SOT-23 (TO-236AB), 3-pin surface-mount plastic package with standard footprint per DIN 6784. Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C).

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives low-current drive signal; Darlington configuration ensures minimal I_B needed for full I_C conduction.
2 (Emitter)	Current return path	Connected to higher potential rail in PNP operation; must be routed with low impedance for stable biasing.
3 (Collector)	Output current terminal	Sinks load current up to 500 mA DC; requires thermal relief on PCB due to power dissipation constraints.

Key Features

Feature	Design Value
Darlington architecture	Monolithic dual-PNP integration enables h_FE ≥ 10,000 without external component matching or layout sensitivity.
High V_(BR)_CES and V_(BR)_CBO	30 V rating allows direct interface with 24 V industrial control rails without additional clamping circuitry.
Low V_BE_SAT	≤2.0 V at I_C = 100 mA ensures reliable turn-on with 3.3 V or 5 V MCU GPIO outputs without level-shifting.
Thermal robustness	Junction temperature rating of 150 °C supports operation in enclosed enclosures or ambient temperatures up to 85 °C.

Applications

Industrial Sensor Interface

Microcontroller Output Driver

Use Scenario: Driving resistive or inductive loads (e.g., solenoids, relays, LED arrays) from 3.3 V/5 V microcontroller GPIO pins in factory automation modules.

IC Role / Device Role / Timing Role: PNP Darlington switch providing current amplification and voltage level translation between logic and load domains.

Use Value: Eliminates need for discrete base-resistor networks or external driver ICs; simplifies BOM and reduces PCB area in compact sensor nodes.

Use Scenario: Enabling legacy 5 V TTL-compatible peripheral control from modern low-voltage MCUs in embedded instrumentation.

IC Role / Device Role / Timing Role: Level-shifting switch that inverts logic polarity while sourcing/sinking sufficient current for TTL input thresholds.

Use Value: Supports direct connection to 74HC-series inputs or optocoupler LEDs without pull-up resistors or buffer stages.

Low-Power Analog Amplifier

Thermal Protection Circuit

Use Scenario: Building low-noise preamplifier stages for thermistor or RTD signal conditioning in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: High-h_FE PNP amplifier configured in common-emitter topology for DC-coupled gain with minimal base current error.

Use Value: Reduces input bias current errors by >99% compared to single-transistor designs, improving measurement accuracy at sub-µA levels.

Use Scenario: Implementing overtemperature cutoff in motor driver boards using NTC thermistor feedback and comparator-triggered shutdown.

IC Role / Device Role / Timing Role: Darlington-based latching switch that holds OFF state after thermal trip until manual reset or power cycle.

Use Value: Provides fail-safe latch behavior with negligible standby current (<100 nA I_CBO), extending system uptime in unattended equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCV61B,115 (Nexperia)	h_FE = 12,000–24,000 at I_C = 10 mA; V_CE_SAT = 1.2 V max; same SOT-23 package but different pinout (1=C, 2=B, 3=E).	Requires PCB layout revision due to reversed pin assignment; not drop-in compatible without trace modification.	Select only if redesigning layout and requiring tighter V_CE_SAT tolerance.
MMDT3906-7-F (Diodes Inc.)	Single PNP transistor (not Darlington); h_FE = 100–300 at I_C = 10 mA; V_CE_SAT = 0.4 V max; same pinout (1=B, 2=E, 3=C).	Lacks Darlington gain - demands ~100× higher base drive current; unsuitable where MCU GPIO current budget is constrained.	Choose only when ultra-low V_CE_SAT is critical and base drive capability is abundant.

Compared with BCV61B and MMDT3906, SMBTA64E6327 uniquely balances ultra-high h_FE, verified SOT-23 thermal performance, and industry-standard pinout - making it optimal for retrofitting legacy designs and minimizing base-drive overhead in resource-limited microcontrollers.

Availability

SMBTA64E6327 is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller output drivers, and low-power analog amplifiers requiring stable component supply and long-term manufacturability.

Supply support for SMBTA64E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SMBTA64 belongs to Infineon's general-purpose bipolar transistor product line, engineered specifically for high-gain, low-base-drive switching and amplification in space-constrained industrial and consumer electronics.

FAQ

What is the maximum continuous collector current for SMBTA64E6327?

The absolute maximum DC collector current is 500 mA, as specified in the "Maximum Ratings" table. This value assumes proper PCB thermal design (e.g., adequate copper pour and thermal vias) and ambient temperature ≤ 81 °C. Exceeding this rating risks thermal runaway or permanent degradation of h_FE.

Does SMBTA64E6327 require an external base resistor?

Yes - a series base resistor is mandatory to limit I_B and prevent damage. With h_FE ≥ 10,000, even 10 µA base current can drive ~100 mA collector current. Typical values range from 10 kΩ (for 3.3 V GPIO) to 47 kΩ (for 5 V logic), calculated using V_BE_SAT ≈ 1.8 V and desired I_C.

Can SMBTA64E6327 be used in linear amplification mode?

Yes - its specified h_FE and V_CE_SAT parameters are characterized across DC and small-signal conditions. However, due to Darlington architecture, it exhibits higher V_BE (~1.8 V) and lower bandwidth than single transistors; best suited for low-frequency (<1 MHz), high-gain DC-coupled stages.

Is SMBTA64E6327 RoHS compliant and halogen-free?

Yes - per Infineon's official product change notice PCN-2005-001 and packaging code E6327, SMBTA64E6327 meets RoHS Directive 2011/65/EU and is manufactured as a halogen-free device, with chlorine and bromine content <900 ppm each.

SMBTA64E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP - Darlington

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 100µA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20000 @ 100mA, 5V

Power - Max:: 330 mW

Frequency - Transition:: 125MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

SMBTA64E6327 FAQ

1.How can I place an order for SMBTA64E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBTA64E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBTA64E6327 reliable?

The price and inventory of SMBTA64E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBTA64E6327 is usually 5 days.

3.What payment methods are accepted for SMBTA64E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBTA64E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBTA64E6327?

SMBTA64E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBTA64E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBTA64E6327?

For technical support, including SMBTA64E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBTA64E6327 requirements.

6.How does Aetrix verify that SMBTA64E6327 is sourced from the original manufacturer or authorized distributors?

All SMBTA64E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBTA64E6327 meets industry standards.

7.What is the process for return or replacement of SMBTA64E6327?

All SMBTA64E6327 units undergo pre-shipment inspection (PSI). If there is an issue with SMBTA64E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBTA64E6327 part is unused and in its original packaging.

Return procedure for SMBTA64E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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