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onsemi SMMBT5401LT1
- Part No.:
- SMMBT5401LT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SMMBT5401LT1.pdf
- Description:
- TRANS PNP 150V 0.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:135,758
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Product details
Overview
SMMBT5401LT1 from onsemi is a PNP silicon small-signal transistor rated for −150 VCEO, −500 mA continuous collector current, and 100–300 MHz transition frequency (fT), designed for high-voltage switching and amplification in industrial power supplies, relay drivers, and voltage-level translation circuits.
For engineers reviewing the SMMBT5401LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified −160 VCBO rating, low VCE(sat) of −0.2 V at −10 mA/−1 mA, Pb-free SOT-23 package compatibility, and thermal resistance of 556 °C/W on FR-5 board.
Technical Context
The SMMBT5401LT1 operates as a general-purpose PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for stable DC gain (hFE = 50–240) across −55°C to +150°C junction temperature range. Its breakdown ratings (−150 VCEO, −160 VCBO) support use in flyback snubbers and high-side switch nodes where reverse-biased collector-base junction integrity is critical.
Small-signal performance includes fT ≥ 100 MHz at −10 mA/−10 V, Cobo ≤ 6.0 pF at −10 V, and NF ≤ 8.0 dB at −200 µA/−5 V - confirming suitability for low-noise preamplifier stages and RF-coupled control interfaces up to VHF band.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −150 Vdc - supports operation in 120 VAC-derived rails with margin for transient spikes |
| IC (cont.) | −500 mAdc - enables direct drive of 100 mA loads with 5× safety margin |
| fT | 100–300 MHz - ensures stable gain in audio and sub-VHF signal conditioning |
| VCE(sat) | −0.2 V at −10 mA/−1 mA - minimizes conduction loss in saturated-switch applications |
| RJA (FR-5) | 556 °C/W - defines thermal derating slope of 1.8 mW/°C above 25°C ambient |
| Cobo | ≤ 6.0 pF at −10 V - limits Miller capacitance in high-speed switching nodes |
| hFE | 50–240 at −1 to −50 mA - provides predictable base drive requirements across operating range |
Pinout & Package
SOT-23 (TO-236) package, 3-pin surface-mount, JEDEC case 318, style 6. Dimensions per ON Semiconductor CASE 318-08 (0.95 mm × 1.3 mm footprint, 1.0 mm height).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Current-controlled input node; requires series resistor to limit IB per hFE and load demand |
| 2 | Emitter | Common terminal for PNP topology; connects to higher-potential rail in high-side switch configuration |
| 3 | Collector | Output terminal; sinks current to ground or lower-potential node when biased on |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO | −160 Vdc enables robust operation in inductive load switching with voltage overshoot |
| Pb-free construction | Complies with RoHS Directive 2011/65/EU without requiring process requalification |
| Low noise figure | NF ≤ 8.0 dB at −200 µA allows use in precision analog front-ends without added filtering |
| Wide TJ range | −55°C to +150°C operation supports deployment in automotive under-hood and industrial motor-control enclosures |
Applications
| Industrial Power Supply Protection | Relay Driver Circuit |
|---|---|
Use Scenario: Overvoltage crowbar circuit triggered by Zener reference during AC line surge events. IC Role / Device Role / Timing Role: High-voltage PNP switch that rapidly shorts main supply rail to ground upon fault detection. Use Value: −150 VCEO withstands 120 VAC peak (170 V) plus 30% margin; fast turn-off (tf < 200 ns at 30 V) prevents latch-up. |
Use Scenario: Driving 12 VDC coil of electromechanical relay from 3.3 V MCU GPIO via level-shifting interface. IC Role / Device Role / Timing Role: Inverting level translator and current amplifier between low-voltage logic and inductive load. Use Value: VBE(sat) ≤ −1.0 V ensures full saturation with 3.3 V base drive; hFE ≥ 50 delivers >100 mA collector current. |
| LED String Current Sink | Linear Voltage Regulator Pass Element |
Use Scenario: Constant-current sink for 24 V LED string in signage backlighting with PWM dimming. IC Role / Device Role / Timing Role: Active current-regulating element controlled by op-amp feedback loop. Use Value: −500 mAdc rating supports up to 400 mA LED load; low VCE(sat) reduces thermal dissipation in linear mode. |
Use Scenario: Pass transistor in adjustable 5–15 V linear regulator supplying analog sensor subsystem. IC Role / Device Role / Timing Role: Series pass element dissipating excess voltage between unregulated input and regulated output. Use Value: RJA = 556 °C/W allows 0.5 W dissipation at +70°C ambient; hFE stability ensures consistent regulation over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PN2907A | VCEO = −60 V, fT = 200 MHz, SOT-23 package | Limited to ≤60 V systems; unsuitable for 100+ V flyback or snubber use | Select only when VCEO margin < 100 V is acceptable and cost sensitivity outweighs voltage headroom |
| MMBT5551 | PNP counterpart to NPN MMBT5401; identical VCEO/IC but different hFE distribution (80–250) | Same voltage/current capability; minor gain variation affects base resistor sizing | Valid alternative if design tolerates ±15% hFE shift and same thermal profile is confirmed |
Compared with PN2907A and MMBT5551, the SMMBT5401LT1 provides superior voltage isolation (−150 VCEO vs. −60 V), making it the only option among the three suitable for 120 VAC-derived circuits without external clamping, while maintaining identical SOT-23 footprint and assembly compatibility.
Availability
SMMBT5401LT1 is available at Aetrix Electronics and suitable for industrial power supply protection, relay driver circuits, and LED string current sink applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for SMMBT5401LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The SMMBT5401LT1 belongs to onsemi's legacy high-voltage bipolar transistor product line, engineered specifically for reliability-critical switching and amplification tasks in harsh environments where voltage margin, thermal stability, and long-term parametric consistency are mandatory.
FAQ
What is the maximum safe operating voltage for SMMBT5401LT1 in continuous DC applications?
The SMMBT5401LT1 has a guaranteed minimum VCEO of −150 Vdc and VCBO of −160 Vdc per its datasheet. For continuous DC operation, the absolute maximum applied collector-emitter voltage must not exceed −150 Vdc to ensure device integrity and long-term reliability. Derating is recommended for designs subject to transients or elevated temperatures.
Is SMMBT5401LT1 compatible with lead-free reflow soldering processes?
Yes, the SMMBT5401LT1 is manufactured in a Pb-free SOT-23 package and qualified for standard lead-free reflow profiles per J-STD-020. Its maximum peak reflow temperature is 260°C, and the device meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements prior to assembly.
Can SMMBT5401LT1 replace MMBT5401 in existing PCB layouts?
Yes, the SMMBT5401LT1 shares identical SOT-23 package dimensions, pinout (Base-Emitter-Collector on pins 1–2–3), and electrical specifications with MMBT5401. It is a direct form-fit-function replacement with no PCB modifications required, and both parts comply with the same JEDEC TO-236 outline and marking conventions.
What is the typical DC current gain (hFE) of SMMBT5401LT1 at −50 mA collector current?
At −50 mA collector current and −5 V collector-emitter voltage, the SMMBT5401LT1 exhibits hFE ranging from 50 to 240 per datasheet specifications. The typical value observed across production lots is approximately 120, supporting predictable base drive calculations for switching and linear applications.
Does SMMBT5401LT1 support operation at junction temperatures above +125°C?
Yes, the SMMBT5401LT1 is rated for junction and storage temperatures from −55°C to +150°C. Operation at +125°C to +150°C is permitted provided power dissipation remains within derated limits - e.g., ≤135 mW at +125°C on FR-5 board (225 mW × [1 − (125−25)/556]). Thermal design must verify actual TJ under worst-case load.
SMMBT5401LT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 150 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 10mA, 5V
- Power - Max:
- 300 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SMMBT5401LT1 FAQ
1.How can I place an order for SMMBT5401LT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMMBT5401LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMMBT5401LT1 reliable?
The price and inventory of SMMBT5401LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMMBT5401LT1 is usually 5 days.
3.What payment methods are accepted for SMMBT5401LT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMMBT5401LT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMMBT5401LT1?
SMMBT5401LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMMBT5401LT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMMBT5401LT1?
For technical support, including SMMBT5401LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMMBT5401LT1 requirements.
6.How does Aetrix verify that SMMBT5401LT1 is sourced from the original manufacturer or authorized distributors?
All SMMBT5401LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMMBT5401LT1 meets industry standards.
7.What is the process for return or replacement of SMMBT5401LT1?
All SMMBT5401LT1 units undergo pre-shipment inspection (PSI). If there is an issue with SMMBT5401LT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMMBT5401LT1 part is unused and in its original packaging.
Return procedure for SMMBT5401LT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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