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onsemi SMMBTA13LT1

Part No.:
SMMBTA13LT1
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixSMMBTA13LT1.pdf
Description:
TRANS NPN DARL 30V 0.3A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,000

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Product details

Overview

SMMBTA13LT1 from onsemi is an NPN silicon Darlington amplifier transistor in SOT-23 package, rated for 30 VCE, 300 mA continuous collector current, and DC current gain (hFE) of 5000–10,000 at IC = 10 mA, used in low-power signal amplification and switching circuits in automotive control modules and industrial sensor interfaces.

For engineers reviewing the SMMBTA13LT1 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed high hFE at low drive current, AEC-Q101 qualification for automotive use, thermal resistance of 417 °C/W on alumina substrate, and Pb-free RoHS-compliant packaging.

Technical Context

The SMMBTA13LT1 implements a monolithic Darlington pair architecture with integrated base-emitter resistor network, delivering high current gain while maintaining low saturation voltage (VCE(sat) ≤ 1.5 V at IC = 100 mA, IB = 0.1 mA) and low leakage (ICBO ≤ 100 nA). It operates across −55 °C to +150 °C junction temperature range.

Its small-signal bandwidth extends to fT = 125 MHz at IC = 10 mA, VCE = 5 V, supporting audio-frequency amplification and fast-switching applications; noise performance is characterized down to 50 Hz with specified wideband noise voltage and figure.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 30 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions.
IC (continuous) 300 mA - Continuous collector current rating defining maximum steady-state load drive capability.
hFE 5000–10,000 - Guaranteed DC current gain at IC = 10 mA, enabling high-efficiency low-base-drive operation.
VCE(sat) ≤1.5 V - Collector-emitter saturation voltage at IC/IB = 1000, minimizing power loss in switching mode.
RJA (alumina) 417 °C/W - Thermal resistance from junction to ambient on 0.4×0.3×0.024 in. 99.5% alumina substrate.
fT 125 MHz - Current-gain bandwidth product confirming suitability for audio and medium-speed digital switching.

Pinout & Package

SMMBTA13LT1 is housed in a Pb-free SOT-23 (TO-236) surface-mount package (Case 318, Style 6), measuring 2.90 mm × 1.30 mm × 0.95 mm with gull-wing leads. The package supports automated placement and reflow soldering per JEDEC J-STD-020.

Pin/Terminal Circuit Role Design Meaning
1 - Base Control input node Accepts low-current drive to enable high-gain amplification; internally connected to first transistor's base in Darlington configuration.
2 - Emitter Current return path Common emitter terminal shared by both transistors; referenced to system ground or bias rail in common-emitter amplifier setups.
3 - Collector Output current node Delivers amplified output current; connects to load or next stage; rated for 30 V and 300 mA continuous operation.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics under stress conditions.
Pb-free, Halogen-free, RoHS compliant Meets global environmental regulations without compromising thermal or electrical performance.
Darlington architecture Provides minimum hFE = 5000 at 10 mA, reducing required base drive by >99% versus single BJT.
Low VBE(on) ≤2.0 V at IC = 100 mA ensures compatibility with 3.3 V and 5 V logic-level microcontrollers.

Applications

Automotive Door Lock Actuator Driver Industrial Proximity Sensor Amplifier

Use Scenario: Driving solenoid-based door lock actuators in 12 V vehicle systems with microcontroller GPIO limited to 5 mA output.

IC Role / Device Role / Timing Role: High-gain Darlington switch providing 300 mA load current from <500 μA base drive.

Use Value: Eliminates need for external driver stages, reduces PCB area and component count while meeting AEC-Q101 reliability requirements.

Use Scenario: Amplifying weak analog signals from inductive proximity sensors in factory automation PLC input modules.

IC Role / Device Role / Timing Role: Low-noise, high-hFE preamplifier stage boosting mV-level sensor outputs to ADC-compatible levels.

Use Value: Enables stable 20 kHz signal bandwidth and <10 nV/√Hz noise floor without active compensation circuitry.

Consumer Appliance Fan Speed Controller Medical Infusion Pump Motor Interface

Use Scenario: PWM-controlled DC fan driver in smart HVAC systems where MCU output cannot directly sink fan coil current.

IC Role / Device Role / Timing Role: Switching transistor operating in saturated mode during PWM ON periods, dissipating <150 mW at 25 °C.

Use Value: Maintains <1.5 V saturation drop across full 300 mA load range, minimizing heat generation and enabling compact heatsinkless design.

Use Scenario: Isolating and amplifying motor enable signals in battery-powered infusion pumps requiring precise flow rate control.

IC Role / Device Role / Timing Role: Signal-level interface between low-power ARM Cortex-M0+ controller and brushed DC motor driver IC.

Use Value: Supports −55 °C to +125 °C operating range and meets IEC 60601 creepage/clearance requirements via SOT-23 creepage distance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBTA13LT1G Same die, identical electrical specs, but marked without 'S' prefix and not AEC-Q101 certified. Approved for commercial/industrial use only; excluded from automotive production programs requiring PPAP documentation. Select MMBTA13LT1G only when AEC-Q101 compliance is not required and cost sensitivity outweighs qualification traceability.
ZTX1048A Higher VCEO = 60 V, lower hFE = 200–600, TO-92 package (larger footprint, higher RJA). Used in mains-powered industrial controls where higher voltage margin is needed but space constraints are less critical. Choose ZTX1048A only if 60 V rating is mandatory and SOT-23 size is not required; not suitable for automotive PCB layouts.

Compared with MMBTA13LT1G and ZTX1048A, the SMMBTA13LT1 uniquely combines AEC-Q101 qualification, SOT-23 miniaturization, and guaranteed hFE ≥5000 - making it the sole option for space-constrained automotive signal amplification where process validation and thermal efficiency are jointly critical.

Availability

SMMBTA13LT1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, and medical device motor interface applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SMMBTA13LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The SMMBTA13LT1 belongs to onsemi's automotive-qualified discrete transistor family, engineered specifically for high-reliability signal amplification and switching in harsh-environment electronic control units.

FAQ

What is the maximum junction temperature rating for the SMMBTA13LT1?

The SMMBTA13LT1 has a specified junction and storage temperature range of −55 °C to +150 °C. This rating enables operation in under-hood automotive environments and industrial enclosures without forced cooling. Derating begins above 25 °C ambient, with thermal resistance of 417 °C/W on alumina substrate. The SMMBTA13LT1 must be operated within this limit to ensure long-term reliability and avoid parametric shift.

Is the SMMBTA13LT1 pin-compatible with the MMBTA13LT1G?

Yes, the SMMBTA13LT1 and MMBTA13LT1G share identical SOT-23 pinout (Base-1, Emitter-2, Collector-3), same package dimensions, and identical electrical specifications. However, the SMMBTA13LT1 carries the 'S' prefix denoting AEC-Q101 qualification and PPAP capability - a distinction critical for automotive production. The SMMBTA13LT1 is not a generic replacement but the qualified version of the same silicon.

What does the 'S' prefix in SMMBTA13LT1 signify?

The 'S' prefix in SMMBTA13LT1 indicates automotive-grade qualification per AEC-Q101, including extended temperature testing, mechanical stress validation, and PPAP documentation readiness. It also denotes unique site and process control requirements mandated by automotive OEMs. This prefix distinguishes it from commercial-grade variants like MMBTA13LT1G, even though both share identical electrical behavior and package.

Can the SMMBTA13LT1 be used in linear amplifier configurations?

Yes, the SMMBTA13LT1 supports linear operation with verified noise characteristics (e.g., 10 nV/√Hz at 1 kHz) and stable hFE across collector currents from 1 mA to 250 mA. Its Darlington structure provides high input impedance and low distortion in Class-A preamplifier stages. However, thermal management is essential: at 100 mW dissipation, junction temperature rise exceeds 40 °C on FR-5 board, requiring careful layout or substrate choice.

What is the typical base-emitter voltage (VBE) of the SMMBTA13LT1 at operating conditions?

The SMMBTA13LT1 exhibits a maximum VBE of 2.0 Vdc at IC = 100 mAdc and VCE = 5.0 Vdc. This reflects the dual-base-emitter junction drop inherent to its Darlington configuration. At lower currents (e.g., IC = 10 mA), VBE typically measures ~1.4 V. Designers must account for this elevated threshold when interfacing with 3.3 V microcontrollers to ensure sufficient base drive margin.

SMMBTA13LT1 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN - Darlington
Current - Collector (Ic) (Max):
300 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Power - Max:
225 mW
Frequency - Transition:
125MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

SMMBTA13LT1 FAQ

1.How can I place an order for SMMBTA13LT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMMBTA13LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMMBTA13LT1 reliable?

The price and inventory of SMMBTA13LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMMBTA13LT1 is usually 5 days.

3.What payment methods are accepted for SMMBTA13LT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMMBTA13LT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMMBTA13LT1?

SMMBTA13LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMMBTA13LT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMMBTA13LT1?

For technical support, including SMMBTA13LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMMBTA13LT1 requirements.

6.How does Aetrix verify that SMMBTA13LT1 is sourced from the original manufacturer or authorized distributors?

All SMMBTA13LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMMBTA13LT1 meets industry standards.

7.What is the process for return or replacement of SMMBTA13LT1?

All SMMBTA13LT1 units undergo pre-shipment inspection (PSI). If there is an issue with SMMBTA13LT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMMBTA13LT1 part is unused and in its original packaging.

Return procedure for SMMBTA13LT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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