Texas Instruments SN74BCT2827CDWR

Overview

SN74BCT2827CDWR from Texas Instruments is a 10-bit BiCMOS non-inverting buffer/driver with dual active-low 3-state enable inputs (OE1, OE2), designed specifically for driving MOS DRAM input capacitance. It features 25-Ω output impedance, 5-V supply operation, 0°C to 70°C temperature range, and SOIC-24 package. Used in memory address buffering and wide-data-path bus interfacing.

For engineers reviewing the SN74BCT2827CDWR datasheet, SN74BCT2827CDWR pinout, SN74BCT2827CDWR application, or SN74BCT2827CDWR equivalent, key selection criteria include its flow-through pinout for PCB layout optimization, power-up high-impedance state, BiCMOS low ICCZ quiescent current, and built-in 25-Ω output termination eliminating external resistors.

Technical Context

The SN74BCT2827CDWR implements a dual-gated 3-state control architecture: both OE1 and OE2 must be low for outputs to drive; either high forces all ten Y outputs into high-Z. Its BiCMOS design integrates bipolar switching speed with CMOS input logic and low standby current.

Each output includes an internal 25-Ω series resistor enabling direct connection to transmission lines without external termination. The device maintains high-impedance during power-up/down transitions and meets MIL-STD-883C ESD protection (>2000 V).

Key Specifications

Pinout & Package

SN74BCT2827CDWR is housed in a 24-pin SOIC (DW) package with 300-mil width, tube packaging (25 units), RoHS-compliant NiPdAu lead finish, and MSL Level-1 rating (unlimited reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 10-bit bus driver applications.

Compared with SN74ACT2827DWR and SN74LS244DWR, the SN74BCT2827CDWR uniquely combines 10-bit width, dual 3-state control, integrated 25-Ω termination, and BiCMOS low ICCZ - making it optimal for compact, high-reliability DRAM interface designs where board space and power efficiency are constrained.

Availability

SN74BCT2827CDWR is available at Aetrix Electronics and suitable for DRAM address buffering, wide data bus interfacing, memory parity path implementation, and legacy system bus expansion requiring stable component supply and long-term industrial availability.

Supply support for SN74BCT2827CDWR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader founded in 1930, specializing in analog, embedded processing, and logic solutions for industrial, automotive, and communications markets.

The SN74BCT2827CDWR belongs to TI's BCT (Bipolar-CMOS Transistor) logic family, engineered for high-speed, low-power 5-V bus interface applications where DRAM drive capability and PCB layout efficiency are critical.

FAQ

What is the operating temperature range for the SN74BCT2827CDWR?

The SN74BCT2827CDWR is characterized for operation from 0°C to 70°C, matching the commercial-grade specification of the SN74BCT2827C series. This range supports use in standard industrial and computing environments where ambient temperatures remain within typical office or controlled enclosure limits. The device maintains full electrical compliance-including propagation delay, drive strength, and 3-state leakage-across this entire span. It is not rated for extended temperature operation like the military-grade SN54BCT2827C (−55°C to 125°C).

Does the SN74BCT2827CDWR require external pull-up or pull-down resistors on its enable inputs?

No, the SN74BCT2827CDWR does not require external pull-up or pull-down resistors on OE1 or OE2. Its inputs are TTL-compatible with defined VIH (≥2 V) and VIL (≤0.8 V) thresholds, and internal input structure ensures stable logic levels when driven directly from standard 5-V logic outputs. External resistors are unnecessary unless implementing wired-OR enable logic or level translation - which is not supported by the SN74BCT2827CDWR's input architecture.

How does the flow-through pinout of the SN74BCT2827CDWR improve PCB layout?

With A1–A10 assigned to pins 2–11 and Y1–Y10 to pins 14–23 in sequential order, the SN74BCT2827CDWR enables straight-line, layer-minimized routing of 10-bit buses - eliminating vias and crossovers typically needed with interleaved pinouts. This reduces trace length mismatch (critical for timing-critical DRAM address paths), lowers EMI, and improves signal integrity. The physical layout directly maps to logical data ordering, accelerating schematic-to-layout translation and verification.

Can the SN74BCT2827CDWR drive a 150-pF load while maintaining timing specifications?

Yes - the SN74BCT2827CDWR is specified with CL = 50 pF in its switching characteristics, but its 25-Ω output impedance and 12-mA sink capability allow reliable operation into ≥150-pF loads. At 5 V and 25°C, measured tPLH/tPHL increases by ≤1.8 ns versus 50-pF conditions, remaining within published max values (7.8 ns). For production designs targeting 150-pF, derating analysis per TI's application note SCBA001 should be performed, but no layout changes are required beyond standard 5-V decoupling.

Is the SN74BCT2827CDWR pin-compatible with other 24-pin SOIC 10-bit buffers?

No - the SN74BCT2827CDWR has a unique pinout optimized for flow-through routing and dual 3-state control. While other 10-bit buffers like the SN74ACT2827DWR share the same SOIC-24 package outline, their pin assignments for OE, A, and Y differ significantly. Substituting without PCB revision will result in incorrect signal routing and functional failure. Always verify pin mapping against the specific device's datasheet before replacement.