Texas Instruments SN74BCT2827CNS
- Part No.:
- SN74BCT2827CNS
- Manufacturer:
- Texas Instruments
- Package:
- -
- Datasheet:
-
SN74BCT2827CNS.pdf
- Description:
- IC BUFF/DVR/MEMORY 10BIT 24SO
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Product details
Overview
SN74BCT2827CNS from Texas Instruments is a 10-bit BiCMOS non-inverting buffer/driver with dual 3-state enable inputs (OE1, OE2), designed for high-speed MOS DRAM address/data bus interfacing. It operates at 4.5–5.5 V, delivers 12 mA sink current per output, features 25-Ω on-chip output termination, and supports 0°C to 70°C industrial temperature range.
For engineers reviewing the SN74BCT2827CNS datasheet, SN74BCT2827CNS pinout, SN74BCT2827CNS application, or SN74BCT2827CNS equivalent, key selection criteria include its flow-through pinout for PCB layout optimization, power-up high-impedance state, 5.2 ns max tPLH propagation delay at 5 V/50 pF, and compatibility with legacy TTL-level control signals.
Technical Context
This device implements a dual-input AND-gated 3-state control logic: outputs enter high-impedance when either OE1 or OE2 is high, ensuring robust bus arbitration in shared-memory systems. Its BiCMOS architecture combines bipolar input stages for TTL-compatible thresholds (VIH = 2 V, VIL = 0.8 V) with CMOS-like low ICCZ quiescent current (3.8–6 mA).
Each output integrates an internal 25-Ω series resistor, eliminating external termination components while maintaining signal integrity on capacitive DRAM buses. The flow-through pinout-inputs on one side (pins 1–11, 13), outputs on the opposite (pins 14–24)-reduces trace crossovers and improves signal routing efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage | 4.5 V to 5.5 V - ensures compatibility with standard 5-V TTL and early CMOS memory subsystems |
| Output Sink Current | 12 mA per channel - sufficient to drive heavy capacitive loads of MOS DRAM address lines |
| Propagation Delay | 5.2 ns max (tPLH, A→Y) at 5 V/50 pF - enables reliable operation in sub-20-ns memory access cycles |
| Input Thresholds | VIH = 2 V, VIL = 0.8 V - matches standard TTL logic levels for seamless interface with legacy controllers |
| Quiescent Current | ICCZ = 3.8–6 mA - BiCMOS design reduces standby power vs. pure bipolar buffers |
| Output Termination | 25-Ω integrated series resistor - eliminates need for external resistors, simplifying BOM and layout |
| ESD Protection | >2000 V per MIL-STD-883C Method 3015 - enhances handling robustness in manufacturing environments |
Pinout & Package
SN74BCT2827CNS is packaged in a 24-pin plastic small-outline (SOIC) DW package (15.4 mm × 7.5 mm, 1.27 mm pitch), RoHS-compliant with CU NIPDAU finish and moisture sensitivity level (MSL) Level-1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 13 | OE1, OE2 | Dual active-low 3-state enable inputs - AND logic ensures outputs go high-Z if either is asserted |
| 2–11, 14 | A1–A10, Y1 | 10-bit non-inverting data path - flow-through arrangement minimizes layer transitions on PCB |
| 15–24 | Y2–Y10 | Output terminals - each includes 25-Ω series resistance for controlled edge rates and reduced ringing |
| 12 | GND | Ground reference - dedicated low-inductance return path for all I/O and supply currents |
| 24 | VCC | Power supply - decoupling capacitor placement near this pin critical for noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| BiCMOS process technology | Reduces ICCZ quiescent current by >50% versus equivalent bipolar-only buffers, lowering system power |
| Integrated 25-Ω output resistors | Eliminates 20 external termination resistors in a 10-bit bus, reducing component count and board area |
| Flow-through pinout | Enables straight-line PCB routing between memory controller and DRAM bank, cutting trace length by ~40% |
| Power-up high-impedance state | Prevents bus contention during power sequencing, removing need for external reset-synchronized OE control |
| TTL-compatible input thresholds | Accepts standard 5-V TTL logic without level-shifting, enabling drop-in replacement in legacy designs |
Applications
| DRAM Address Buffering | Parity Bus Interface |
|---|---|
|
Use Scenario: Driving 10-bit address lines to multiple MOS DRAM chips in a memory module. IC Role / Device Role / Timing Role: Non-inverting buffer with 3-state control, providing fanout and impedance matching for address propagation. Use Value: Integrated 25-Ω resistors suppress reflections on parallel address traces, maintaining setup/hold timing margins across temperature. |
Use Scenario: Isolating and driving parity bits across a wide data bus in fault-tolerant computing systems. IC Role / Device Role / Timing Role: Bidirectional-capable bus driver supporting parity generation and checking paths. Use Value: Dual OE inputs allow synchronized gating of parity signals with main data bus, preventing metastability during error detection cycles. |
| Legacy System Memory Expansion | Industrial Control Backplane Interface |
|
Use Scenario: Upgrading memory subsystems in 1980s–1990s industrial controllers using TTL-based CPUs. IC Role / Device Role / Timing Role: Pin-compatible upgrade for obsolete 74LS244/74ALS244, delivering higher speed and lower power. Use Value: 5.2 ns propagation delay and 0.35 V VOL at 12 mA meet tight timing budgets of 80286/80386-based systems without redesign. |
Use Scenario: Interfacing programmable logic controllers (PLCs) to distributed I/O modules over long backplane traces. IC Role / Device Role / Timing Role: Robust bus driver with ESD protection and wide operating temperature margin. Use Value: >2000 V HBM ESD rating and 0°C–70°C rating ensure reliability in electrically noisy factory-floor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 10-bit bus driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SN74ACT244N | CMOS process, higher VIH (3.5 V), no integrated 25-Ω resistors, 8-bit (dual 4-bit) | Requires external termination; better suited for 3.3-V mixed-voltage systems | Select when interfacing with ACT-family logic or where lower ICC is critical and external resistors are acceptable |
| 74F244SC | Fast TTL process, no integrated termination, higher ICCZ (~30 mA), 8-bit configuration | Lacks flow-through pinout and power-up Z-state; requires careful power sequencing | Choose only for strict pin-for-pin replacement in existing F-series designs where BiCMOS benefits are secondary |
Compared with SN74ACT244N and 74F244SC, the SN74BCT2827CNS uniquely combines 10-bit width, integrated 25-Ω termination, flow-through layout, and power-up high-Z - making it optimal for space-constrained, high-reliability DRAM bus designs requiring zero external components.
Availability
SN74BCT2827CNS is available at Aetrix Electronics and suitable for DRAM address buffering, parity bus interfacing, legacy system memory expansion, and industrial control backplane interface requiring stable component supply and long-term obsolescence management.
Supply support for SN74BCT2827CNS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader founded in 1930, specializing in analog, embedded processing, and logic solutions for industrial, automotive, and communications markets.
The SN74BCT2827CNS belongs to TI's BCT (Bipolar-CMOS Transistor) logic family, engineered specifically for high-speed, low-power interfacing between TTL controllers and capacitive MOS memory loads.
FAQ
What is the function of the dual OE inputs on the SN74BCT2827CNS?
The SN74BCT2827CNS uses two active-low 3-state enable inputs (OE1 and OE2) wired as an AND gate: outputs enter high-impedance whenever either input is high. This allows flexible bus arbitration-e.g., OE1 can be tied to CPU write strobe and OE2 to memory select-ensuring clean isolation during idle or conflict conditions. The SN74BCT2827CNS maintains this behavior across its full 0°C to 70°C operating range.
Does the SN74BCT2827CNS require external termination resistors?
No. The SN74BCT2827CNS integrates 25-Ω series resistors on all ten outputs, explicitly designed to match typical PCB trace impedances and dampen reflections when driving MOS DRAM inputs. This eliminates the need for 20 discrete resistors in a 10-bit bus, reducing bill-of-materials cost and PCB real estate. The SN74BCT2827CNS achieves this without compromising propagation delay or output drive strength.
Is the SN74BCT2827CNS pin-compatible with older 74LS244 devices?
No-the SN74BCT2827CNS is a 10-bit device in a 24-pin SOIC (DW) package with flow-through pinout (A1–A10 on left, Y1–Y10 on right), whereas the 74LS244 is an 8-bit device in a 20-pin DIP/SOIC with interleaved I/O. While both serve bus-driving roles, the SN74BCT2827CNS offers higher channel count, integrated termination, and superior speed/power trade-offs-but requires PCB layout revision. The SN74BCT2827CNS is not a drop-in replacement for 74LS244.
What is the maximum capacitive load the SN74BCT2827CNS can reliably drive?
The SN74BCT2827CNS is characterized for CL = 50 pF in switching tests and explicitly designed to drive the capacitive input characteristics of MOS DRAMs-typically 10–30 pF per pin. With 12 mA sink capability and 25-Ω series resistance, it maintains signal integrity up to ~75 pF total load per output under worst-case timing conditions. Exceeding this may degrade tPLH/tPHL beyond the 5.2/7.2 ns max specs. The SN74BCT2827CNS datasheet confirms performance at 50 pF; derating is recommended above that value.
How does the SN74BCT2827CNS handle power-up and power-down sequences?
The SN74BCT2827CNS features an inherent power-up high-impedance state: all outputs remain in 3-state regardless of OE input voltage until VCC stabilizes within specification. This prevents bus contention during brown-out or asymmetric power ramping. During power-down, outputs revert to high-Z before VCC drops below 2 V. This behavior is guaranteed across the full 0°C to 70°C range and is intrinsic to the BiCMOS design-not dependent on external circuitry. The SN74BCT2827CNS thus simplifies system power sequencing.
SN74BCT2827CNS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
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- Number of Elements:
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- Number of Bits per Element:
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- Input Type:
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SN74BCT2827CNS FAQ
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6.How does Aetrix verify that SN74BCT2827CNS is sourced from the original manufacturer or authorized distributors?
All SN74BCT2827CNS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SN74BCT2827CNS meets industry standards.
7.What is the process for return or replacement of SN74BCT2827CNS?
All SN74BCT2827CNS units undergo pre-shipment inspection (PSI). If there is an issue with SN74BCT2827CNS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SN74BCT2827CNS part is unused and in its original packaging.
Return procedure for SN74BCT2827CNS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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