Texas Instruments SN74CB3Q16210DGGR

Overview

SN74CB3Q16210DGGR from Texas Instruments is a high-bandwidth 20-bit FET bus switch organized as two independent 10-bit bidirectional switches, featuring 5 Ω typical ON-state resistance (ron), rail-to-rail 0–5 V switching at 3.3-V VCC, and 4 pF typical OFF-state I/O capacitance. It supports PCI interface and memory interleaving with near-zero propagation delay (0.15 ns) and operates across 2.3 V to 3.6 V supply range.

For engineers reviewing the SN74CB3Q16210DGGR datasheet, SN74CB3Q16210DGGR pinout, SN74CB3Q16210DGGR application, or SN74CB3Q16210DGGR equivalent, key selection criteria include partial-power-down support (Ioff), 500 MHz bandwidth capability, TTL/CMOS-compatible control inputs, 48-pin TSSOP package thermal performance (θJA = 70°C/W), and 5-V-tolerant I/Os during power-up/down states.

Technical Context

The SN74CB3Q16210DGGR implements a charge-pump-enhanced FET architecture to maintain flat, low ON-state resistance across input voltage (VI) from 0 V to 5.5 V - enabling rail-to-rail signal pass-through without level translation. Its dual 10-bit structure allows independent enable control via 1OE and 2OE pins, supporting either two isolated 10-bit buses or one consolidated 20-bit path.

Each switch channel exhibits bidirectional operation with near-zero propagation delay due to minimal RC time constant (ron × Cio(OFF)), while integrated undershoot clamp diodes on all data and control inputs protect against negative transients. The device achieves stable high-impedance isolation during power sequencing when OE is pulled up to VCC, and meets JESD 78 Class II latch-up immunity (>100 mA).

Key Specifications

Pinout & Package

TSSOP-48 (DGG) package: 12.6 mm × 6.2 mm × 1.2 mm body, 0.5 mm pitch, lead-free NIPDAU finish, MSL Level-1, RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus switch applications.

Compared with SN74CB3Q16210DGGR, SN74CBT16210DGGR trades 5-V I/O robustness and charge-pump efficiency for lower unit cost, while SN74LVC1G3157DCKR offers single-pole flexibility at the expense of bus-width scalability and power-down safety - making SN74CB3Q16210DGGR the optimal choice for high-bandwidth, mixed-supply, and hot-plug-critical 20-bit interconnects.

Availability

SN74CB3Q16210DGGR is available at Aetrix Electronics and suitable for PCI interface design, memory interleaving systems, and bus isolation applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant TSSOP packaging.

Supply support for SN74CB3Q16210DGGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of innovation in high-speed interface solutions.

The SN74CB3Q16210DGGR belongs to TI's Widebus™ family of high-bandwidth FET bus switches, engineered specifically for low-distortion, rail-to-rail signal gating in broadband communications, networking infrastructure, and data-intensive computing platforms.

FAQ

What is the maximum signal frequency supported by the SN74CB3Q16210DGGR?

The SN74CB3Q16210DGGR supports up to 500 MHz bandwidth in high-bandwidth data paths, as confirmed by TI's characterization under loaded conditions. This performance stems from its 5 Ω typical ON-state resistance and 4 pF OFF-state I/O capacitance, yielding a low RC time constant. The 20 MHz maximum OE switching frequency applies only to control pin toggling-not data path throughput.

Does the SN74CB3Q16210DGGR support hot-swap or live-insertion applications?

Yes, the SN74CB3Q16210DGGR supports hot-swap applications due to its 5-V tolerant I/Os during both powered-up and powered-down states, combined with Ioff circuitry limiting reverse current to ≤1 µA when VCC = 0 V. These features prevent bus contention and backfeed damage, satisfying requirements for live-insertion in modular backplane and server systems.

Can the SN74CB3Q16210DGGR operate with a 2.5-V supply voltage?

Yes, the SN74CB3Q16210DGGR is fully specified for VCC from 2.3 V to 3.6 V, including 2.5-V operation. At 2.5 V, it maintains rail-to-rail switching (0–3.3 V), 5 Ω typical ron, and 0.25 ns max propagation delay. Control inputs accept TTL or CMOS levels, and data I/Os remain compatible with 0–5 V signaling regardless of VCC value.

How does the charge pump in the SN74CB3Q16210DGGR improve performance compared to standard FET switches?

The integrated charge pump in the SN74CB3Q16210DGGR elevates the gate voltage of the pass transistor above VCC, ensuring strong enhancement-mode conduction across the full 0–5.5 V input range. This results in flat, low ON-state resistance (5 Ω typical) independent of signal voltage - unlike standard FET switches whose ron rises sharply near VCC or ground rails, degrading timing predictability and signal fidelity.

What is the thermal performance of the SN74CB3Q16210DGGR in its TSSOP-48 package?

The SN74CB3Q16210DGGR in the TSSOP-48 (DGG) package has a junction-to-ambient thermal impedance (θJA) of 70°C/W under standard JEDEC test conditions. This rating assumes a 1-inch² copper pad with two vias; actual board-level performance depends on layout. The package height is capped at 1.2 mm, supporting low-profile system integration while maintaining adequate power dissipation for continuous 20-bit switching at 20 MHz.