Texas Instruments SN74CB3Q16244DGVR
- Part No.:
- SN74CB3Q16244DGVR
- Manufacturer:
- Texas Instruments
- Category:
- Signal Switches, Multiplexers, Decoders
- Package:
- 48-TFSOP (0.173", 4.40mm Width)
- Datasheet:
-
SN74CB3Q16244DGVR.pdf
- Description:
- IC BUS SWITCH 4 X 1:1 48TVSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SN74CB3Q16244DGVR from Texas Instruments is a 16-bit FET bus switch with four independent 4-bit channels, 5-V tolerant I/Os, 5 Ω typical ON-state resistance (ron), rail-to-rail 0–5-V switching at 3.3-V VCC, and 20 MHz maximum OE switching frequency. It enables high-bandwidth bidirectional data routing in memory expansion and FPGA I/O bridging applications.
For engineers reviewing the SN74CB3Q16244DGVR datasheet, SN74CB3Q16244DGVR pinout, SN74CB3Q16244DGVR application, or SN74CB3Q16244DGVR equivalent, this device delivers low-capacitance (4 pF OFF-state), near-zero propagation delay (0.18 ns), partial-power-down support (Ioff), and TTL/CMOS-compatible control inputs - critical for signal integrity in high-speed digital interconnects.
Technical Context
The SN74CB3Q16244DGVR integrates a charge-pump circuit to elevate gate voltage of pass transistors, ensuring flat ron across 2.3–3.6-V VCC and 0–5-V I/O swing. Its four active-low OE pins (1OE–4OE) independently enable 4-bit bidirectional A↔B paths, supporting configurable 4-/8-/16-bit bus isolation.
Each channel exhibits matched ON-resistance (5–9 Ω), low OFF-state capacitance (4 pF), and undershoot clamp diodes on all I/O and control pins. The device operates from –40°C to +85°C with Ioff protection enabling safe backdrive during partial power-down.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Range | 2.3 V to 3.6 V - supports dual-voltage system interfacing (e.g., 2.5-V core ↔ 3.3-V peripheral) |
| ron (Typical) | 5 Ω - minimizes voltage drop and timing skew across 16-bit parallel buses |
| Cio(OFF) | 4 pF typical - reduces capacitive loading and signal distortion on high-speed traces |
| fOE (Max) | 20 MHz - enables fast channel enable/disable sequencing in burst-mode protocols |
| Propagation Delay (tpd) | 0.18 ns (min) - ensures sub-nanosecond latency for time-critical data forwarding |
| Ioff Support | Yes - prevents damaging current flow when VCC = 0 V, enabling hot-swap and partial power-down |
| ESD Rating | ±2000 V HBM - meets industrial handling requirements without external protection |
Pinout & Package
SN74CB3Q16244DGVR uses a 48-pin TVSOP (DGV) package measuring 9.70 mm × 4.40 mm with 0.4-mm lead pitch. It features four VCC (pins 7, 18, 31, 42) and four GND (pins 4, 10, 15, 21) terminals for low-noise power distribution.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1A1–1A4, 1B1–1B4 | Bidirectional switched I/O pair (Channel 1) | Connects A-side and B-side data lines only when 1OE = L; supports 0–5-V signaling |
| 1OE | Active-low output-enable input | Controls Channel 1; tied to VCC via pullup resistor ensures high-impedance at power-up |
| 2A1–2A4, 2B1–2B4 | Bidirectional switched I/O pair (Channel 2) | Electrically isolated from other channels; identical ron and Cio specs as Channel 1 |
| 2OE | Active-low output-enable input | Controls Channel 2; pin 48 - requires same pullup strategy as 1OE |
| 3A1–3A4, 3B1–3B4 | Bidirectional switched I/O pair (Channel 3) | Supports independent 4-bit bus gating; shares VCC/GND rails with other channels |
| 3OE | Active-low output-enable input | Controls Channel 3; pin 25 - enables selective isolation in multi-bus architectures |
| 4A1–4A4, 4B1–4B4 | Bidirectional switched I/O pair (Channel 4) | Completes 16-bit path; 4B4 is pin 23; all I/Os 5-V tolerant regardless of VCC state |
| 4OE | Active-low output-enable input | Controls Channel 4; pin 24 - allows full 16-bit enable or per-quad granularity |
| VCC (×4) | Power supply | Pins 7, 18, 31, 42 - each requires local 0.022-µF bypass capacitor per TI layout guidelines |
| GND (×4) | Ground reference | Pins 4, 10, 15, 21 - distributed grounding reduces ground bounce in high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| Rail-to-rail analog/digital switching | 0–5-V I/O range at 3.3-V VCC enables mixed-voltage domain bridging without level shifters |
| Charge-pump enhanced FET architecture | Elevates gate voltage to maintain low, flat ron across full VCC and temperature range |
| Partial-power-down (Ioff) protection | Blocks reverse current when VCC = 0 V, allowing safe backdrive from live buses |
| Undershoot clamp diodes | Integrated on all I/O and control pins - eliminates need for external ESD protection components |
| Low dynamic power consumption | ICC = 1 mA typical at 3.3 V - reduces thermal load in dense PCB layouts |
Applications
| Memory Expansion Interface | FPGA I/O Bridging |
|---|---|
Use Scenario: Expanding DRAM address/data bus between SoC and additional memory banks in networking equipment. IC Role / Device Role / Timing Role: Bidirectional 16-bit bus switch isolating memory controller from secondary banks during refresh cycles. Use Value: 0.18-ns propagation delay and 4-pF OFF capacitance preserve signal integrity at DDR2/DDR3 speeds without added termination. |
Use Scenario: Interfacing heterogeneous FPGA I/O banks (1.8-V, 2.5-V, 3.3-V) to legacy peripherals in industrial controllers. IC Role / Device Role / Timing Role: Voltage-agnostic bus gate enabling safe, glitch-free handshaking across mismatched logic families. Use Value: 5-V tolerant I/Os and Ioff support allow hot-plug capability and prevent latch-up during power sequencing mismatches. |
| Optical Module Control Bus | WiMAX Baseband Signal Routing |
Use Scenario: Managing configuration and status signals between host processor and SFP+ transceivers in optical line cards. IC Role / Device Role / Timing Role: Low-capacitance, high-bandwidth switch for I²C/SMBus and GPIO lines shared across multiple pluggable modules. Use Value: 4-pF Cio(OFF) minimizes bus loading, maintaining rise/fall times <1 ns required for 400-kHz I²C operation. |
Use Scenario: Dynamic reconfiguration of RF front-end signal paths in WiMAX base station radios using FPGA-controlled switches. IC Role / Device Role / Timing Role: High-speed 16-bit multiplexer enabling real-time antenna selection and calibration loop routing. Use Value: 20-MHz fOE supports rapid channel reassignment within TDMA frame boundaries without CPU intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar FET bus switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SN74CBT16244DGVR | No charge pump; ron = 6 Ω typical at 3.3 V, but no 5-V tolerance when powered down | Lacks Ioff and 5-V tolerant powered-down I/O - unsuitable for hot-swap or mixed-voltage partial-power-down systems | Select SN74CB3Q16244DGVR where backdrive immunity and wider voltage interoperability are required |
| SN74LVC16244ADGVR | CMOS buffer (not FET switch); ron not specified; 3.3-V only I/O; no 5-V tolerance | Provides level translation but introduces propagation delay (~5 ns) and cannot isolate buses in high-Z state | Choose SN74CB3Q16244DGVR when true bidirectional, zero-delay, high-Z isolation is mandatory |
Compared with SN74CBT16244DGVR and SN74LVC16244ADGVR, the SN74CB3Q16244DGVR uniquely combines charge-pump-enhanced low ron, powered-down 5-V I/O tolerance, and Ioff - making it the only option for robust, high-bandwidth bus isolation in thermally constrained, mixed-voltage telecom infrastructure.
Availability
SN74CB3Q16244DGVR is available at Aetrix Electronics and suitable for memory expansion interfaces, FPGA I/O bridging, optical module control buses, and WiMAX baseband signal routing requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for SN74CB3Q16244DGVR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with over 90 years of innovation in high-reliability electronic components.
The SN74CB3Q16244DGVR belongs to TI's CB3Q family of high-bandwidth FET bus switches, engineered specifically for low-latency, low-distortion signal routing in broadband communications, optical networking, and high-speed computing infrastructure.
FAQ
What is the maximum operating frequency supported by the SN74CB3Q16244DGVR?
The SN74CB3Q16244DGVR supports a maximum OE switching frequency of 20 MHz under recommended conditions (VCC = 3.3 V, RL ≥ 1 MΩ, CL = 0). This reflects the speed at which the output-enable signal can toggle the 4-bit channel ON/OFF states. Actual data path bandwidth reaches up to 500 MHz due to its low ron and Cio, enabling high-fidelity signal transmission beyond the control pin limit.
Does the SN74CB3Q16244DGVR support 5-V tolerant I/O when unpowered?
Yes, the SN74CB3Q16244DGVR maintains 5-V tolerance on all I/O pins (A and B ports) even when VCC = 0 V. This is enabled by internal clamping structures and is explicitly validated in the datasheet's Absolute Maximum Ratings and Ioff specifications. It allows safe connection to live 5-V buses during system power-down sequences.
How many independent bus segments can the SN74CB3Q16244DGVR control?
The SN74CB3Q16244DGVR controls four independent 4-bit bus segments via dedicated OE inputs (1OE–4OE). These can be used as four separate 4-bit switches, combined into two 8-bit switches (e.g., 1OE+2OE together), or configured as one unified 16-bit switch (all OEs tied). Each segment operates bidirectionally with identical electrical characteristics.
What is the purpose of the charge pump in the SN74CB3Q16244DGVR?
The integrated charge pump in the SN74CB3Q16244DGVR elevates the gate voltage of internal FET pass transistors above VCC. This ensures low and flat ON-state resistance (ron ≈ 5 Ω) across the full 2.3–3.6-V VCC range and over temperature, eliminating ron variation that would otherwise degrade signal integrity and timing margins in wide-voltage systems.
Are external bypass capacitors required for the SN74CB3Q16244DGVR?
Yes - TI specifies a 0.022-µF ceramic bypass capacitor between each VCC pin (pins 7, 18, 31, 42) and the nearest GND pin (pins 4, 10, 15, 21). These must be placed as close as possible to the device to suppress high-frequency noise and stabilize the charge pump operation, directly impacting ron consistency and switching reliability.
SN74CB3Q16244DGVR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- 74CB
- Package/Case:
- 48-TFSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Bus Switch
- Circuit:
- 4 x 1:1
- Independent Circuits:
- 4
- Current - Output High, Low:
- -
- Voltage Supply Source:
- Single Supply
- Voltage - Supply:
- 2.3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TVSOP
SN74CB3Q16244DGVR FAQ
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6.How does Aetrix verify that SN74CB3Q16244DGVR is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of SN74CB3Q16244DGVR?
All SN74CB3Q16244DGVR units undergo pre-shipment inspection (PSI). If there is an issue with SN74CB3Q16244DGVR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SN74CB3Q16244DGVR part is unused and in its original packaging.
Return procedure for SN74CB3Q16244DGVR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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