Texas Instruments SN74CB3T3383DGVR

Overview

SN74CB3T3383DGVR from Texas Instruments is a 10-bit TTL-compatible FET bus-exchange switch with bidirectional data flow, 5 Ω typical ON-state resistance, 8 pF typical OFF-state I/O capacitance, and VCC-operated voltage translation (2.3 V to 3.6 V) enabling mixed-mode signaling between 0–5 V logic levels. It serves as a level-translating bus isolator in memory interleaving and system interconnect applications.

For engineers reviewing the SN74CB3T3383DGVR datasheet, SN74CB3T3383DGVR pinout, SN74CB3T3383DGVR application, or SN74CB3T3383DGVR equivalent, key selection criteria include its 0.25 ns typical propagation delay, Ioff partial-power-down support, 5-V-tolerant I/Os with device powered up or down, and TVSOP-24 package compatibility with high-density portable designs.

Technical Context

The SN74CB3T3383DGVR implements a dual 5-bit bus-exchange architecture controlled by BE (bus-enable) and BX (bus-exchange select) inputs, allowing dynamic reconfiguration of A/B port mappings. Its FET-switch topology delivers near-zero propagation delay and rail-to-rail voltage translation that tracks VCC - supporting simultaneous 5-V, 3.3-V, and 2.5-V signaling domains on shared data paths.

Each switch channel features undershoot clamp diodes, 5-V-tolerant I/Os independent of VCC state, and Ioff protection that blocks backflow current during partial power-down. The device operates across −40°C to 85°C and maintains ≤20 µA ICC across its 2.3–3.6 V VCC range, making it suitable for low-power embedded interconnects requiring signal integrity and power sequencing robustness.

Key Specifications

Pinout & Package

SN74CB3T3383DGVR is housed in a 24-pin TVSOP (Thin Very Small Outline Package) with 0.4 mm lead pitch, 6.6 mm × 4.4 mm body size, and 1.2 mm maximum height - optimized for space-constrained portable and telecom PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus-switching applications.

Compared with SN74CB3T3383DGVR, SN74CBT3383CDGVR trades off Ioff and lower ron for lower cost, while SN74LVC1G3157DCKR offers single-channel flexibility at the expense of scalability and bus-level control - neither provides full functional equivalence in exchange-switch or mixed-voltage isolation roles.

Availability

SN74CB3T3383DGVR is available at Aetrix Electronics and suitable for memory subsystems, processor bus interfaces, level-translation bridges, and hot-swappable module designs requiring stable component supply and long-term industrial availability.

Supply support for SN74CB3T3383DGVR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with over 90 years of innovation in high-reliability silicon solutions.

The SN74CB3T3383DGVR belongs to TI's CB3T bus-switch family, engineered for high-speed, low-latency digital interconnect in mixed-voltage systems - targeting portable computing, industrial control, and communications infrastructure.

FAQ

What is the primary function of the SN74CB3T3383DGVR?

The SN74CB3T3383DGVR is a 10-bit bidirectional FET bus-exchange switch that enables dynamic signal routing and voltage-level translation between mixed-voltage logic domains. Its core function is to isolate, connect, or cross-connect data paths under BE and BX control while maintaining signal integrity across 0–5 V signaling ranges - all with sub-nanosecond propagation delay and minimal loading.

Does the SN74CB3T3383DGVR support hot-swap operation?

Yes, the SN74CB3T3383DGVR supports hot-swap operation through three key features: 5-V-tolerant I/Os that remain safe even when VCC = 0 V, Ioff protection limiting backflow current to <10 µA during partial power-down, and integrated undershoot clamp diodes. These ensure no damaging current flows into unpowered circuitry during live insertion or removal - critical for modular backplane and docking station designs.

What is the role of the BX pin on the SN74CB3T3383DGVR?

The BX (bus-exchange) pin on the SN74CB3T3383DGVR selects between two internal data-path configurations when the BE pin is active low: BX = low connects A1↔B1 and A2↔B2 per 5-bit group; BX = high swaps them to A1↔B2 and A2↔B1. This enables flexible data routing - such as swapping nibble positions or mirroring bus segments - without external logic or PCB redesign, directly within the SN74CB3T3383DGVR's silicon architecture.

Can the SN74CB3T3383DGVR translate 5-V inputs to 2.5-V outputs?

Yes, the SN74CB3T3383DGVR can translate 5-V inputs to 2.5-V outputs when operated with VCC = 2.5 V. Its voltage translation architecture tracks VCC, so output high level approximates VCC (within VCC − 1 V), enabling clean 5-V-to-2.5-V level shifting. This is explicitly validated in the datasheet for 2.5-V VCC operation and supports interoperability with 2.5-V CMOS systems without external components.

What package type is used for the SN74CB3T3383DGVR?

The SN74CB3T3383DGVR uses the TVSOP-24 (Thin Very Small Outline Package) with 0.4 mm lead pitch, 6.6 mm × 4.4 mm body dimensions, and 1.2 mm maximum height. This package provides superior thermal performance (θJA = 86°C/W) and board-area efficiency versus SOIC or SSOP alternatives - making it ideal for compact, thermally constrained applications like handheld instruments and dense telecom line cards.