Texas Instruments SN74CBTD16210DGGR

Overview

SN74CBTD16210DGGR from Texas Instruments is a 20-bit FET bus switch with integrated level shifting, designed for bidirectional 5-V-to-3.3-V signal translation between TTL-compatible buses. It features dual 10-bit independent channels, 5-Ω typical on-state resistance, sub-1-ns propagation delay, and operates across –40°C to 85°C. It enables high-speed interconnect in mixed-voltage memory and peripheral interfaces.

For engineers reviewing the SN74CBTD16210DGGR datasheet, SN74CBTD16210DGGR pinout, SN74CBTD16210DGGR application, or SN74CBTD16210DGGR equivalent, key selection criteria include verified 5-Ω Ron, dual OE control per 10-bit channel, TSSOP-48 package thermal performance (θJA = 70°C/W), and diode-based level-shifting architecture confirmed for 5-V input → 3.3-V output operation.

Technical Context

This device implements two independent 10-bit FET transmission gates, each controlled by a dedicated OE input. Its NMOS pass-gate structure-combined with an integrated VCC-clamp diode-enables deterministic level shifting without external components. The switch operates in true bidirectional mode with no internal direction control logic.

Electrical behavior is defined by low on-resistance (5–7 Ω at VCC = 4.5 V), fast enable/disable times (1.5–9.8 ns), and minimal capacitive loading (Cio(OFF) = 5.5 pF). It requires no pull-up resistors on B-side outputs when used for 5-V-to-3.3-V translation, as the internal diode clamps to VCC.

Key Specifications

Pinout & Package

TSSOP-48 (DGG) package: 12.6 mm × 6.1 mm × 1.2 mm body, 0.5-mm pitch, lead-free NiPdAu finish, MSL Level-1, RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FET bus switch applications.

Compared with SN74CBT16210DGGR and SN74LVC16245ADGGR, the SN74CBTD16210DGGR uniquely delivers integrated 5-V-to-3.3-V level shifting in a passive FET topology-enabling lower power, lower latency, and reduced component count in mixed-voltage bus architectures.

Availability

SN74CBTD16210DGGR is available at Aetrix Electronics and suitable for memory expansion interfaces, industrial I/O backplanes, PCI/ISA isolation, and FPGA configuration bridges requiring stable component supply and long-term industrial lifecycle support.

Supply support for SN74CBTD16210DGGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of heritage in logic and interface solutions.

The SN74CBTD16210DGGR belongs to TI's Widebus™ family of high-speed bus switches, engineered specifically for low-latency, low-power, mixed-voltage interconnect in industrial, computing, and communications infrastructure.

FAQ

What is the maximum continuous current per channel for the SN74CBTD16210DGGR?

The SN74CBTD16210DGGR supports a continuous channel current of 128 mA, as specified in its absolute maximum ratings. This rating applies to each individual A-B path within the 20-bit structure. The device maintains stable on-resistance and thermal performance under this load when operated within recommended conditions (VCC = 4.5 V to 5.5 V, TA ≤ 85°C). Exceeding this current may trigger thermal shutdown or degrade long-term reliability.

Does the SN74CBTD16210DGGR require external pull-up resistors on the B-side outputs?

No, the SN74CBTD16210DGGR does not require external pull-up resistors on the B-side outputs when used for 5-V-to-3.3-V level shifting. Its integrated diode-to-VCC structure actively clamps B-port outputs to approximately VCC − 0.7 V, enabling direct 3.3-V logic-level generation from 5-V inputs without external components. This is confirmed in the functional description and electrical characteristics section of the official datasheet.

Can the SN74CBTD16210DGGR be used for 3.3-V-to-5-V level shifting?

No, the SN74CBTD16210DGGR is not designed for 3.3-V-to-5-V level shifting. Its internal diode architecture only supports translation from higher-voltage inputs (up to 5.5 V) to lower-voltage outputs referenced to VCC (typically 3.3 V). Driving the B port with 3.3 V while applying 5-V signals to A will not produce valid 5-V outputs; the device lacks active boosting or charge-pump circuitry required for upward translation.

What is the thermal resistance (θJA) of the SN74CBTD16210DGGR in its TSSOP-48 package?

According to the official Texas Instruments datasheet, the SN74CBTD16210DGGR in the TSSOP-48 (DGG) package has a junction-to-ambient thermal resistance (θJA) of 70°C/W. This value assumes standard JEDEC 2-layer board conditions (1-inch² copper pad, 2 oz Cu). Actual thermal performance may vary based on PCB layout, copper area, and airflow, but 70°C/W serves as the validated baseline for thermal design margining.

How many ground pins does the SN74CBTD16210DGGR have, and why are they distributed across the package?

The SN74CBTD16210DGGR has four dedicated ground pins (Pins 8, 17, 35, and 44) distributed across the TSSOP-48 footprint. This symmetric placement minimizes ground loop inductance and reduces simultaneous switching noise (SSN) across its 20-bit data path. Each pair of ground pins services one 10-bit channel, ensuring low-impedance return paths for both halves of the device and maintaining signal integrity under high-speed, high-current switching conditions.