Texas Instruments SN74CBTD16210DGVR

Overview

SN74CBTD16210DGVR from Texas Instruments is a 20-bit FET bus switch with integrated level shifting, designed for bidirectional 5-V-to-3.3-V signal translation between mixed-voltage domains. It features dual 10-bit sections with independent OE controls, 5-Ω typical on-state resistance, sub-1-ns propagation delay, and TTL-compatible inputs - enabling high-speed data routing in memory expansion, processor interconnect, and FPGA I/O bridging applications.

For engineers reviewing the SN74CBTD16210DGVR datasheet, SN74CBTD16210DGVR pinout, SN74CBTD16210DGVR application, or SN74CBTD16210DGVR equivalent, key selection criteria include its dual-OE-controlled 20-bit bus switching architecture, guaranteed 5-Ω r_on at 4.5 V, ±1 µA input leakage, 50 pF off-capacitance, and TVSOP-48 package compatibility with high-density PCB layouts.

Technical Context

This device implements two independent 10-bit FET-based transmission gates, each controlled by a dedicated OE input. Its internal diode-to-V_CC structure enables passive level shifting from 5-V inputs to 3.3-V outputs without external components.

Operation requires V_CC = 4.5–5.5 V, supports –40°C to +85°C ambient, and delivers 0.25 ns typical propagation delay (A↔B) with 50 pF load. The switch remains functional only when V_CC is applied; no operation occurs at V_CC = 0 V.

Key Specifications

Pinout & Package

SN74CBTD16210DGVR uses a 48-pin TVSOP (DGV) package measuring 12.6 mm × 6.1 mm × 1.2 mm (max height), compliant with JEDEC MO-153 and optimized for fine-pitch surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus switching applications.

Compared with SN74CBTD16210DGVR, SN74CBT16210DGVR lacks integrated level shifting and demands external circuitry for voltage translation, while SN74LVC16245ADGGR operates exclusively at 3.3 V and introduces direction-control complexity - making SN74CBTD16210DGVR uniquely suited for seamless 5-V-to-3.3-V bidirectional bus interfacing without layout or logic overhead.

Availability

SN74CBTD16210DGVR is available at Aetrix Electronics and suitable for memory expansion interfaces, processor-FPGA interconnects, and industrial backplane routing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SN74CBTD16210DGVR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with over 90 years of innovation in industrial, automotive, and communications markets.

The SN74CBTD16210DGVR belongs to TI's Widebus™ family of high-speed bus switches, engineered specifically for low-latency, low-distortion signal routing in mixed-voltage digital systems where timing predictability and voltage translation are critical.

FAQ

What is the primary function of the SN74CBTD16210DGVR?

The SN74CBTD16210DGVR is a 20-bit FET bus switch with integrated level shifting, enabling bidirectional signal routing between 5-V and 3.3-V logic domains. Its dual 10-bit sections, each controlled by an independent OE input, allow selective activation of bus segments while maintaining sub-nanosecond propagation delay and 5-Ω on-resistance - making it ideal for high-speed memory and interconnect applications where voltage translation and timing integrity are essential. The SN74CBTD16210DGVR achieves this without external components thanks to internal diodes tied to V_CC.

Does the SN74CBTD16210DGVR support true bidirectional level shifting?

Yes, the SN74CBTD16210DGVR supports bidirectional level shifting from 5-V inputs to 3.3-V outputs using its integrated diode-to-V_CC structure. When a 5-V signal is applied to port A, the diode clamps the output at port B to approximately V_CC – 0.7 V (i.e., ~4.3 V), but the device is specified for reliable 3.3-V output operation under recommended conditions. The SN74CBTD16210DGVR is validated for this behavior in level-shifting applications per its datasheet test conditions and functional description - though optimal performance requires proper V_CC regulation and load capacitance ≤50 pF.

What is the maximum operating temperature range for the SN74CBTD16210DGVR?

The SN74CBTD16210DGVR is rated for operation from –40°C to +85°C, meeting industrial-grade environmental requirements. This specification is confirmed in the "recommended operating conditions" table of the official datasheet (SCDS049H), where TA (operating free-air temperature) is explicitly defined as –40°C to 85°C. The SN74CBTD16210DGVR's thermal impedance of 58°C/W (θ_JA, DGV package) further supports reliable operation within this range under typical PCB copper pour and airflow conditions.

Can the SN74CBTD16210DGVR be used with a 3.3-V-only supply?

No - the SN74CBTD16210DGVR requires a 4.5-V to 5.5-V supply (V_CC) to operate correctly. Its internal level-shifting diodes and FET channel characteristics are designed around a 5-V rail; applying only 3.3 V results in undefined switching behavior, excessive on-resistance, and failure to meet timing or voltage translation specifications. The SN74CBTD16210DGVR datasheet explicitly states V_CC min = 4.5 V, and operation outside this range violates recommended conditions and may cause permanent damage per absolute maximum ratings.

How does the dual OE architecture of the SN74CBTD16210DGVR improve system design?

The dual OE (1OE and 2OE) architecture of the SN74CBTD16210DGVR allows independent control of two 10-bit bus segments - enabling selective activation, power gating, or timing isolation without affecting the other half. For example, one OE can enable address lines while the other manages data lines, reducing simultaneous switching noise and simplifying timing closure. This capability is intrinsic to the SN74CBTD16210DGVR's functional table and pinout, and directly supports complex memory-mapped or burst-mode protocols where partial bus access is required. The SN74CBTD16210DGVR thus provides hardware-level flexibility unattainable with single-OE 20-bit switches.