Texas Instruments SN74CBTD16211DGGR

Overview

SN74CBTD16211DGGR from Texas Instruments is a 24-bit FET bus switch with integrated level shifting, designed for bidirectional 5-V-to-3.3-V signal translation between TTL-compatible buses. It features dual 12-bit independent channels, 5 Ω typical on-state resistance, sub-nanosecond propagation delay (0.25 ns), and operates across –40°C to 85°C. It serves in high-speed memory/data bus isolation and mixed-voltage system interconnects.

For engineers reviewing the SN74CBTD16211DGGR datasheet, SN74CBTD16211DGGR pinout, SN74CBTD16211DGGR application, or SN74CBTD16211DGGR equivalent, key selection criteria include verified 5 Ω r_on, dual OE-controlled 12-bit channel independence, TSSOP-56 package thermal performance (θ_JA = 64°C/W), level-shifting diode integration, and guaranteed operation under 4.5–5.5 V supply.

Technical Context

The SN74CBTD16211DGGR implements a passive FET-based bus switch architecture with no internal logic gates-signal path conduction is purely analog, enabling true bidirectional, rail-to-rail switching. Its integrated input diode to V_CC enables deterministic 5-V-to-3.3-V level translation without external components.

Each 12-bit section is controlled by a dedicated OE input: low enables A↔B connection; high forces high-impedance isolation. The device supports simultaneous or independent channel control, and all unused control inputs must be tied to V_CC or GND per TI SCBA004 guidelines.

Key Specifications

Pinout & Package

TSSOP-56 (DGG) package: 14.1 mm × 6.2 mm × 1.2 mm body, 0.5 mm pitch, lead-free NiPdAu finish, JEDEC MO-153 compliant, moisture sensitivity level 1 (260°C reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus switch applications.

Compared with SN74CBT16211DGGR and SN74LVC16245ADGGR, the SN74CBTD16211DGGR uniquely delivers integrated 5-V-to-3.3-V translation with sub-nanosecond delay and zero static current-making it optimal for compact, low-latency mixed-voltage bus isolation where passive switching suffices.

Availability

SN74CBTD16211DGGR is available at Aetrix Electronics and suitable for industrial control backplanes, memory subsystems, and FPGA peripheral interfaces requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for SN74CBTD16211DGGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of expertise in high-reliability interface solutions.

The SN74CBTD16211DGGR belongs to TI's Widebus™ family of high-speed bus switches, engineered specifically for low-latency, level-shifting interconnect in mixed-voltage digital systems.

FAQ

What is the maximum continuous current rating per channel for the SN74CBTD16211DGGR?

The SN74CBTD16211DGGR supports a continuous channel current of 128 mA per switch path. This rating is defined under absolute maximum conditions and assumes proper thermal management-actual usable current depends on ambient temperature, PCB copper area, and simultaneous channel loading. At full 24-channel conduction with 5 Ω r_on, total power dissipation must remain within the TSSOP-56 package's 64°C/W θ_JA limit.

Does the SN74CBTD16211DGGR require external pull-up or pull-down resistors on its control inputs?

No-external resistors are not required on the 1OE or 2OE inputs of the SN74CBTD16211DGGR. However, TI mandates that all unused control inputs must be held at a valid logic level (V_CC or GND) to prevent floating states that could cause increased ICC or erratic switching. Direct connection to V_CC or GND satisfies this requirement without resistors.

Can the SN74CBTD16211DGGR be used for 3.3-V-to-5-V level shifting?

No-the SN74CBTD16211DGGR is designed specifically for 5-V-to-3.3-V level shifting via its integrated input diode to V_CC. Applying 3.3-V signals to port A and expecting 5-V outputs at port B is not supported. Reverse-direction translation would violate the diode bias condition and result in undefined output levels or excessive leakage.

What is the significance of the "DGG" suffix in SN74CBTD16211DGGR?

The "DGG" suffix in SN74CBTD16211DGGR denotes the TSSOP-56 package type per TI's packaging nomenclature. It specifies a 14.1 mm × 6.2 mm body with 0.5 mm lead pitch, green (RoHS & no Sb/Br) finish, NiPdAu lead termination, and moisture sensitivity level 1. This differs from "DGV" (TVSOP-56, thinner profile) and "DL" (SSOP-56, wider body).

How does the SN74CBTD16211DGGR handle fast edge rates and high-frequency signals?

The SN74CBTD16211DGGR maintains signal fidelity at high frequencies due to its 5 Ω typical r_on and 0.25 ns propagation delay-both derived from its FET-switch architecture with minimal parasitic capacitance (C_io(OFF) = 5.5 pF). However, TI notes that in applications with very fast edges, multiple simultaneous switching, or high frequencies, the level-shifting effect may diminish; design validation at target frequency and load is recommended.