Texas Instruments SN74CBTS6800DWR

Overview

SN74CBTS6800DWR from Texas Instruments is a 10-bit FET bus switch with precharged outputs and Schottky diode clamping, designed for high-speed TTL-compatible signal routing in hot-swap and live-insertion systems. It features 5-Ω on-state resistance, bidirectional operation, 0.25 ns typical propagation delay, and BIASV-controlled precharge to minimize noise during insertion. Used in backplane interconnects and modular computing systems.

For engineers reviewing the SN74CBTS6800DWR datasheet, SN74CBTS6800DWR pinout, SN74CBTS6800DWR application, or SN74CBTS6800DWR equivalent, key selection criteria include on-resistance matching, BIASV biasing flexibility, Schottky undershoot clamping to –2 V, live-insertion noise suppression, and SOIC-DW package thermal performance (θ_JA = 46°C/W).

Technical Context

The SN74CBTS6800DWR implements a single 10-bit analog switch array using low-threshold FETs, enabling near-zero propagation delay and bidirectional signal flow between A and B ports. Its control logic uses active-low enable (ON), with output precharge activated when ON is high or V_CC = 0 V.

Each I/O includes integrated Schottky clamping diodes limiting undershoot to –2 V, and the B-port precharge path behaves as a 10-kΩ resistor to user-supplied BIASV (1.3 V to V_CC). The device operates across –40°C to 85°C with supply voltage from 4 V to 5.5 V and supports TTL-compatible input thresholds (V_IL ≤ 0.8 V, V_IH ≥ 2 V).

Key Specifications

Pinout & Package

SN74CBTS6800DWR is housed in a 24-pin SOIC (DW) package measuring 7.5 mm × 15.4 mm × 2.35 mm (max height), with standard 0.65 mm lead pitch and gull-wing leads. Thermal performance is characterized by θ_JA = 46°C/W, supporting reliable operation in industrial ambient conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 10-bit FET bus switch applications.

Compared with SN74CBTS6800DWR, SN74CBT16210DLR offers more bits but omits critical live-insertion features, while SN74CBTLV3245PWR targets low-voltage domains and lacks both BIASV control and Schottky protection-making SN74CBTS6800DWR uniquely suited for robust 5 V hot-swap interconnects.

Availability

SN74CBTS6800DWR is available at Aetrix Electronics and suitable for modular backplane interconnects, hot-swappable server blades, industrial PLC I/O modules, and automated test equipment signal matrices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SN74CBTS6800DWR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on reliability, longevity, and industrial-grade qualification.

The SN74CBTS6800DWR belongs to TI's CBTS-series bus switches, engineered specifically for high-reliability hot-swap and live-insertion applications in telecom, industrial automation, and enterprise infrastructure.

FAQ

What is the maximum undershoot voltage the SN74CBTS6800DWR can safely clamp?

The SN74CBTS6800DWR integrates Schottky diodes on all I/O pins that clamp undershoot to –2 V, protecting connected circuitry from negative transients during hot-plug events. This clamping behavior is specified under absolute maximum ratings and remains effective across the full operating temperature range (–40°C to 85°C) and supply voltage range (4 V to 5.5 V). The SN74CBTS6800DWR does not require external clamping components to meet this specification.

How does the BIASV pin function in the SN74CBTS6800DWR during hot-swap operations?

When the ON pin is high or V_CC is 0 V, the SN74CBTS6800DWR precharges its B-port (B1–B10) to the voltage applied to the BIASV pin via an internal 10-kΩ equivalent resistor. This prevents floating nodes and minimizes ground bounce and signal distortion during live insertion. BIASV must be set between 1.3 V and V_CC, and the SN74CBTS6800DWR relies on this externally supplied bias to ensure clean transitions into active operation.

What is the on-state resistance specification for the SN74CBTS6800DWR, and how does it impact signal integrity?

The SN74CBTS6800DWR has a typical on-state resistance (r_on) of 5 Ω, with a guaranteed range of 3 Ω to 7 Ω at V_CC = 4.5 V and I_I = 30 mA. This low r_on ensures minimal voltage drop (<150 mV at 30 mA), preserving logic high/low margins in 3.3 V and 5 V TTL systems. The SN74CBTS6800DWR's r_on uniformity across all 10 channels also maintains consistent timing and skew in parallel data paths.

Can the SN74CBTS6800DWR operate bidirectionally, and what design considerations apply?

Yes, the SN74CBTS6800DWR supports true bidirectional signal flow between A and B ports when ON is low-no direction control signal is required. Its FET-based architecture ensures symmetrical electrical characteristics in both directions. Designers must ensure that voltage levels on either side remain within the absolute maximum rating (–0.5 V to 7 V) and that BIASV is properly configured for precharge. The SN74CBTS6800DWR's bidirectional capability simplifies routing in full-duplex bus topologies without adding complexity.

What package type and thermal characteristics define the SN74CBTS6800DWR?

The SN74CBTS6800DWR is packaged in a 24-pin SOIC (DW) with 0.65 mm lead pitch, 7.5 mm × 15.4 mm body size, and maximum height of 2.35 mm. Its junction-to-ambient thermal resistance (θ_JA) is 46°C/W under standard JEDEC test conditions, enabling reliable operation up to 85°C ambient when mounted on a 2-layer PCB with adequate copper area. The SN74CBTS6800DWR's DW package is RoHS-compliant and qualified for tape-and-reel automated assembly.