Texas Instruments SN74V263-10GGM

Overview

SN74V263-10GGM from Texas Instruments is a 3.3-V CMOS first-in, first-out (FIFO) memory with 8192 × 18 or 16384 × 9 configurable depth/width, 166-MHz operation, 6-ns read/write cycle time, and user-selectable ×9/×18 bus sizing - deployed in high-speed DSP interfacing, video buffering, and telecom data flow synchronization.

For engineers reviewing the SN74V263-10GGM datasheet, SN74V263-10GGM pinout, SN74V263-10GGM application, or SN74V263-10GGM equivalent, key selection criteria include FWFT vs. standard timing mode configuration, programmable almost-empty/full flag offsets, independent RCLK/WCLK domains, big/little-endian byte ordering, and zero-latency retransmit capability.

Technical Context

This FIFO implements dual-clock asynchronous operation with fully independent read and write clock domains (RCLK/WCLK), supporting 0–166 MHz frequencies without inter-clock dependency. It integrates a flexible ×9/×18 bus-matching architecture controlled by IW/OW pins during master reset, enabling dynamic port width configuration.

The device features two distinct timing modes: First-Word Fall-Through (FWFT), where the first word appears on Q outputs after three RCLK edges without REN assertion; and Standard mode, requiring explicit REN activation for all reads including the first. Retransmit functionality supports zero-latency mode via RM pin configuration.

Key Specifications

Pinout & Package

SN74V263-10GGM is packaged in a 100-pin Ball Grid Array (BGA) with GGM suffix, compliant with JEDEC MO-220 VGGD package outline. Pin functions are validated per TI SCAS669D datasheet Rev. February 2003.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FIFO memory applications.

Compared with SN74V273-10PAG, SN74V263-10GGM delivers identical interface logic and timing but at lower memory density and BGA packaging - reducing cost and board space where 8K × 18 suffices. Against IDT72V263L10PF, SN74V263-10GGM adds zero-latency retransmit and FWFT mode configurability while shifting to higher-density BGA, making it preferable for new high-performance embedded designs.

Availability

SN74V263-10GGM is available at Aetrix Electronics and suitable for video frame buffering, DSP data pipeline synchronization, and telecom packet assembly requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for SN74V263-10GGM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and digital signal processing technologies.

The SN74V263-10GGM belongs to TI's high-speed FIFO memory product line, engineered specifically for deterministic data buffering in DSP-centric systems, video infrastructure, and telecommunications equipment demanding sub-10ns timing precision and flexible bus-matching.

FAQ

What memory configurations does the SN74V263-10GGM support?

The SN74V263-10GGM supports two memory organizations: 8192 × 18 and 16384 × 9. The selected configuration is determined by the states of the IW (input width) and OW (output width) pins during master reset. This dual-mode capability allows the SN74V263-10GGM to adapt to varying system data bus widths without hardware redesign.

Does the SN74V263-10GGM support zero-latency retransmit functionality?

Yes, the SN74V263-10GGM supports zero-latency retransmit when the RM (retransmit latency mode) pin is held low during master reset. In this mode, the first retransmitted word appears on the Q outputs synchronized to the same RCLK edge that samples RT = low - a capability not present in earlier-generation FIFOs and critical for retry-based communication protocols.

How does the FWFT mode differ from standard timing mode in the SN74V263-10GGM?

In FWFT mode (enabled by high FWFT/SI at master reset), the first word written to an empty SN74V263-10GGM appears on Q outputs after exactly three RCLK rising edges without requiring REN assertion. In standard mode (FWFT/SI low), every read - including the first - requires both REN = low and a rising RCLK edge, adding deterministic but non-zero initial latency.

Can the SN74V263-10GGM interface directly with 5-V logic systems?

Yes, the SN74V263-10GGM features 5-V-tolerant inputs on all control pins (WEN, REN, MRS, PRS, RT, etc.), allowing direct connection to 5-V CMOS/TTL logic while operating from a 3.3-V supply. This eliminates level-shifting components in mixed-voltage designs, reducing BOM cost and signal integrity risk.

What is the purpose of the BE (big-endian/little-endian) pin on the SN74V263-10GGM?

The BE pin configures byte ordering when crossing ×18 ↔ ×9 boundaries. When BE = low at master reset, the SN74V263-10GGM uses big-endian format: MSB of the 18-bit word is output first in ×9 mode. When BE = high, it uses little-endian: LSB is output first. This ensures correct data alignment in heterogeneous processor/memory subsystems.