Texas Instruments SN74V293-7GGM

Overview

SN74V293-7GGM from Texas Instruments is a 65536 × 18 / 131072 × 9, 3.3-V CMOS FIFO memory with independent read/write clocks, 166-MHz operation, 6-ns read/write cycle time, and user-selectable ×9/×18 bus sizing - deployed in high-throughput network buffering and DSP interfacing where depth expansion and zero-latency retransmit are critical.

For engineers reviewing the SN74V293-7GGM datasheet, SN74V293-7GGM pinout, SN74V293-7GGM application, or SN74V293-7GGM equivalent, key selection criteria include FWFT vs. standard timing mode configuration, programmable almost-empty/full flag offsets, big/little-endian data formatting, and compatibility with TI 'C6x DSP external memory interfaces.

Technical Context

This FIFO implements dual-clock asynchronous architecture with fully independent RCLK and WCLK domains (0–166 MHz), enabling simultaneous read/write without arbitration logic. Its internal RAM array supports two memory configurations: 65536 × 18 or 131072 × 9, selected at master reset via IW/OW pins.

Flag generation uses dedicated offset registers for PAE/PAF with eight factory-default thresholds set by FSEL0/FSEL1/LD during MRS; timing modes (synchronous/asynchronous) for those flags are controlled by PFM, while retransmit latency (zero or normal) is configured via RM. The FWFT/SI pin determines first-word fall-through behavior and serves as serial input post-reset.

Key Specifications

Pinout & Package

SN74V293-7GGM is packaged in a 100-pin Ball Grid Array (BGA), GGM package, with 1.0-mm ball pitch and exposed thermal pad. Pin functions are validated per TI SCAS669D datasheet Figure 1 and Table 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar FIFO memory applications.

Compared with IDT72V2105L15PF and NB3N502FG, SN74V293-7GGM provides the deepest buffer (65536 × 18), FWFT timing for deterministic first-word access, and full flag programmability - making it uniquely suited for high-speed protocol-aware buffering where latency predictability and depth scalability are mandatory.

Availability

SN74V293-7GGM is available at Aetrix Electronics and suitable for telecom infrastructure, video processing, DSP interfacing, and industrial protocol bridging requiring stable component supply across extended production lifecycles.

Supply support for SN74V293-7GGM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and logic solutions, with decades of leadership in high-speed interface ICs and DSP ecosystems.

SN74V293-7GGM belongs to TI's high-speed FIFO memory family designed specifically for glueless integration with C6000 DSPs and demanding real-time data buffering applications in networking and digital video systems.

FAQ

What memory organization does SN74V293-7GGM support?

SN74V293-7GGM supports two memory organizations: 65536 × 18 (64K words × 18 bits) or 131072 × 9 (128K words × 9 bits), selected at master reset via IW and OW pin states. This dual-configuration enables flexible bus-matching between wide write ports and narrow read ports without external logic - a key advantage in heterogeneous system-on-module designs where SN74V293-7GGM bridges mismatched data paths.

Does SN74V293-7GGM support zero-latency retransmit, and how is it enabled?

Yes, SN74V293-7GGM supports zero-latency retransmit, which places the first retransmitted word on the output register on the same RCLK edge that asserts RT. It is enabled by holding RM low during master reset (MRS). When activated, this feature eliminates pipeline delay during header replay in packet-processing applications - a capability confirmed in TI SCAS669D Section 5 and directly implemented in SN74V293-7GGM hardware.

How is bus width configured on SN74V293-7GGM?

Bus width on SN74V293-7GGM is configured using IW (input width) and OW (output width) pins during master reset: low = ×18, high = ×9. This sets both physical port widths and internal addressing - e.g., IW=L/OW=H configures a ×18 write port feeding a ×9 read port. The configuration is latched at MRS and remains active until next reset, enabling runtime-adaptable data path sizing without firmware intervention in SN74V293-7GGM deployments.

What is the purpose of the BE pin on SN74V293-7GGM?

The BE (big-endian/little-endian) pin on SN74V293-7GGM selects byte ordering for ×18→×9 word splitting during read operations. A low BE selects big-endian (MSB-first), high selects little-endian (LSB-first). This setting is sampled during master reset and determines how 18-bit words are partitioned into sequential 9-bit reads - critical for correct data interpretation in multi-processor systems where SN74V293-7GGM interfaces ARM, DSP, and FPGA subsystems with differing endianness conventions.

Can SN74V293-7GGM be used in systems with mixed 3.3-V and 5-V logic?

Yes, SN74V293-7GGM features 5-V-tolerant control inputs (WEN, REN, MRS, PRS, RT, etc.), allowing direct connection to 5-V logic without level shifters. Its core I/O operates at 3.3 V, but input pins tolerate 5-V signals - simplifying integration in legacy industrial backplanes or hybrid voltage systems. Data I/O (D/Q) pins are not 5-V tolerant and must be driven by 3.3-V sources, as explicitly stated in the SN74V293-7GGM datasheet Section 7.