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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi SS8050CBU

Name: SS8050CBU
Brand: onsemi
SKU: SS8050CBU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SS8050CBU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: SS8050CBU.pdf

Description:: TRANS NPN 25V 1.5A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SS8050CBU from onsemi is an NPN epitaxial silicon transistor in TO-92-3 package (Case 135AN), rated for 1.5 A collector current, 25 V V_CEO, and 1 W power dissipation at 25°C. It delivers DC current gain (h_FE) of 120–200 at I_C = 100 mA and is widely used in portable radio output amplifiers operating in Class B push-pull configuration.

For engineers reviewing the SS8050CBU datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/V_CBO ratings, h_FE classification band (C-grade), saturation voltage at 800 mA, thermal resistance (125°C/W), and Pb-free RoHS-compliant packaging per onsemi's SS8050/D Rev. 2 specification.

Technical Context

The SS8050CBU operates as a general-purpose switching and linear amplifier transistor with defined breakdown limits: 40 V V_CBO, 25 V V_CEO, and 6 V V_EBO. Its h_FE classification "C" guarantees minimum 120 and maximum 200 gain at V_CE = 1 V and I_C = 100 mA - critical for consistent biasing in audio and power-switching stages.

It exhibits V_CE(sat) ≤ 0.5 V and V_BE(sat) ≤ 1.2 V under I_C = 800 mA / I_B = 80 mA conditions, enabling low-loss switching in battery-powered loads. Its f_T of 100 MHz supports RF pre-driver and broadband small-signal amplification up to mid-VHF range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	25 V - Maximum safe collector-emitter voltage before avalanche; defines usable supply headroom in low-voltage switching circuits.
I_C	1.5 A - Continuous collector current rating; sets upper limit for load-driving capability in relay drivers or LED arrays.
P_D	1 W at T_A = 25°C - Thermal power limit on standard FR-4 PCB; derates 8 mW/°C above ambient.
h_FE (C-grade)	120–200 @ I_C = 100 mA - Tighter gain bin ensures predictable base drive requirements in production designs.
f_T	100 MHz - Enables stable small-signal amplification up to ~30 MHz with margin; suitable for IF stages and oscillator buffers.
V_CE(sat)	≤ 0.5 V @ I_C = 800 mA, I_B = 80 mA - Low saturation loss improves efficiency in high-duty-cycle switching applications.
R_JA	125°C/W - Junction-to-ambient thermal resistance on specified 76 mm × 114 mm PCB; informs heatsinking needs for sustained 1 W operation.

Pinout & Package

SS8050CBU uses the TO-92-3 package (Case 135AN), a through-hole plastic encapsulated transistor with 4.825 mm × 4.76 mm footprint and standardized leadform. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per onsemi mechanical drawing 98AON13880G and marking diagram.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit path for majority carriers	Connected to ground or low-side return; polarity defines NPN topology and bias direction.
2 (Base)	Control terminal for minority carrier injection	Receives current-limited drive signal; requires series resistor to set I_B for target I_C.
3 (Collector)	Current entry path and output node	Typically tied to positive rail via load; voltage swing limited by V_CEO = 25 V rating.

Key Features

Feature	Design Value
C-grade h_FE binning	Guaranteed 120–200 gain at 100 mA enables precise, repeatable bias network design without gain-margin overdesign.
RoHS-compliant Pb-free construction	Meets global environmental regulations; eliminates lead-based solder compatibility concerns in modern assembly lines.
Complementary pairing with SS8550	Enables direct implementation of Class B push-pull output stages without cross-manufacturer matching effort.
Low V_CE(sat) and V_BE(sat)	Reduces conduction losses and base drive power in high-current switching, extending battery life in portable devices.

Applications

Portable Radio Output Stage	LED Driver for Indicator Arrays
Use Scenario: Final-stage audio amplification in handheld AM/FM radios using Class B push-pull topology. IC Role / Device Role / Timing Role: NPN switching/amplifier transistor delivering 1.5 A peak current to speaker load with minimal crossover distortion. Use Value: C-grade h_FE ensures matched gain with complementary SS8550, enabling balanced push-pull operation and low THD.	Use Scenario: Constant-current switching driver for multi-segment LED status indicators in industrial HMIs. IC Role / Device Role / Timing Role: Low-saturation switch controlling up to 800 mA per channel with fast turn-on/turn-off. Use Value: V_CE(sat) ≤ 0.5 V minimizes power loss and self-heating during continuous LED illumination.
Relay Coil Driver	Microcontroller GPIO Expander
Use Scenario: Driving 12 V/500 mA electromagnetic relay coils from 3.3 V or 5 V microcontroller outputs. IC Role / Device Role / Timing Role: General-purpose NPN interface transistor providing current gain and voltage level translation. Use Value: 25 V V_CEO safely clamps inductive kickback; 1.5 A rating accommodates relay surge currents.	Use Scenario: Offloading high-current digital I/O tasks from resource-constrained MCUs in sensor nodes. IC Role / Device Role / Timing Role: Discrete logic-level translator and current booster for driving external peripherals. Use Value: 100 MHz f_T supports clean edge integrity up to 10 MHz toggle rates, preserving timing margins.

Portable Radio Output Stage

LED Driver for Indicator Arrays

Use Scenario: Final-stage audio amplification in handheld AM/FM radios using Class B push-pull topology.

IC Role / Device Role / Timing Role: NPN switching/amplifier transistor delivering 1.5 A peak current to speaker load with minimal crossover distortion.

Use Value: C-grade h_FE ensures matched gain with complementary SS8550, enabling balanced push-pull operation and low THD.

Use Scenario: Constant-current switching driver for multi-segment LED status indicators in industrial HMIs.

IC Role / Device Role / Timing Role: Low-saturation switch controlling up to 800 mA per channel with fast turn-on/turn-off.

Use Value: V_CE(sat) ≤ 0.5 V minimizes power loss and self-heating during continuous LED illumination.

Relay Coil Driver

Microcontroller GPIO Expander

Use Scenario: Driving 12 V/500 mA electromagnetic relay coils from 3.3 V or 5 V microcontroller outputs.

IC Role / Device Role / Timing Role: General-purpose NPN interface transistor providing current gain and voltage level translation.

Use Value: 25 V V_CEO safely clamps inductive kickback; 1.5 A rating accommodates relay surge currents.

Use Scenario: Offloading high-current digital I/O tasks from resource-constrained MCUs in sensor nodes.

IC Role / Device Role / Timing Role: Discrete logic-level translator and current booster for driving external peripherals.

Use Value: 100 MHz f_T supports clean edge integrity up to 10 MHz toggle rates, preserving timing margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT8050LT1G	SOT-23 package (surface-mount); same h_FE C-bin (120–200); lower P_D = 0.35 W; V_CEO = 25 V identical.	Requires PCB redesign for SMT assembly; unsuitable for through-hole prototyping or high-power thermal pads.	Select when board space is constrained and thermal load remains below 350 mW.
BC817-40	SOT-23 package; h_FE = 250–630 (wider spread); V_CEO = 45 V; P_D = 0.35 W; not RoHS-compliant in legacy variants.	Higher voltage margin but uncontrolled gain distribution complicates bias stability; may require recalibration of base resistors.	Select only if V_CEO > 25 V is mandatory and gain tolerance is acceptable.

Compared with MMBT8050LT1G and BC817-40, the SS8050CBU provides through-hole manufacturability, guaranteed C-bin h_FE, 1 W power handling, and full RoHS compliance - making it optimal for cost-sensitive, medium-power, leaded-assembly applications where thermal and gain consistency are prioritized.

Availability

SS8050CBU is available at Aetrix Electronics and suitable for portable audio amplifiers, LED indicator drivers, relay coil interfaces, and microcontroller I/O expansion requiring stable component supply and long-term manufacturing continuity.

Supply support for SS8050CBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The SS8050CBU belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, cost-effective discrete switching and amplification in battery-powered and low-voltage embedded systems.

FAQ

What is the h_FE range for SS8050CBU?

The SS8050CBU is classified as "C-grade", meaning its DC current gain (h_FE) is guaranteed between 120 and 200 when measured at V_CE = 1 V and I_C = 100 mA. This tighter binning improves predictability in production bias networks compared to broader-range variants like SS8050DBU. The SS8050CBU datasheet (Rev. 2, February 2022) explicitly defines this range in the h_FE Classification table.

Is SS8050CBU RoHS compliant?

Yes, the SS8050CBU is RoHS compliant and Pb-free, as confirmed in the Features section and Ordering Information table of the official onsemi SS8050/D datasheet. It uses halogen-free/BFR-free molding compound and meets EU Directive 2011/65/EU requirements. The top mark "S8050C" and package code "TO-92-3, case 135AN" both correspond to this RoHS-compliant variant.

What is the maximum power dissipation of SS8050CBU?

The SS8050CBU has a maximum power dissipation (P_D) of 1 W at ambient temperature (T_A) = 25°C, with a thermal derating factor of 8 mW/°C above that temperature. This value is validated on a standard FR-4 PCB (76 mm × 114 mm × 1.57 mm) with minimum land pattern. Exceeding this limit risks junction temperature exceeding 150°C, triggering permanent degradation.

How does SS8050CBU differ from SS8050BBU?

The SS8050CBU and SS8050BBU share identical electrical specifications and TO-92-3 package, but differ in h_FE binning: SS8050BBU is B-grade (85–160), while SS8050CBU is C-grade (120–200). This means the SS8050CBU offers higher minimum gain and narrower spread - beneficial for designs requiring consistent base drive and reduced gain-related variance across production units.

What is the pin configuration of SS8050CBU?

The SS8050CBU uses the standard TO-92-3 pinout: Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - as shown in the Marking Diagram and Mechanical Case Outline (Document 98AON13880G) in the onsemi SS8050/D datasheet. This configuration is consistent across all SS8050 variants in Case 135AN and is critical for correct orientation during manual or automated placement.

SS8050CBU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1.5 A

Voltage - Collector Emitter Breakdown (Max):: 25 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 80mA, 800mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 100mA, 1V

Power - Max:: 1 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

SS8050CBU FAQ

1.How can I place an order for SS8050CBU through Aetrix?

Please submit a Request for Quotation (RFQ) for SS8050CBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SS8050CBU reliable?

The price and inventory of SS8050CBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SS8050CBU is usually 5 days.

3.What payment methods are accepted for SS8050CBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SS8050CBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SS8050CBU?

SS8050CBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SS8050CBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SS8050CBU?

For technical support, including SS8050CBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SS8050CBU requirements.

6.How does Aetrix verify that SS8050CBU is sourced from the original manufacturer or authorized distributors?

All SS8050CBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SS8050CBU meets industry standards.

7.What is the process for return or replacement of SS8050CBU?

All SS8050CBU units undergo pre-shipment inspection (PSI). If there is an issue with SS8050CBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SS8050CBU part is unused and in its original packaging.

Return procedure for SS8050CBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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