onsemi SS8050DBU
- Part No.:
- SS8050DBU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
SS8050DBU.pdf
- Description:
- TRANS NPN 25V 1.5A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,379
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SS8050DBU from onsemi is an NPN epitaxial silicon transistor in TO-92-3 (case 135AN) package, rated for 1.5 A collector current, 25 V VCEO, and 1 W power dissipation at 25°C. It delivers DC current gain (hFE) of 160–300 at IC = 100 mA, VCE = 1 V, and is optimized for Class B push-pull audio amplifier stages in portable radios.
For engineers reviewing the SS8050DBU datasheet, pinout, applications, or equivalent options, key selection criteria include its hFE classification (D-grade), saturation voltage (VCE(sat) ≤ 0.5 V @ IC = 800 mA), thermal resistance (RJA = 125 °C/W), and Pb-free, RoHS-compliant construction in TO-92-3.
Technical Context
This transistor operates as a general-purpose switching and linear amplification device with verified breakdown ratings: VCBO = 40 V, VCEO = 25 V, and VEBO = 6 V. Its fT = 100 MHz at VCE = 10 V, IC = 50 mA supports mid-frequency signal amplification tasks.
Thermal performance is defined by RJA = 125 °C/W on standard FR-4 PCB (76 mm × 114 mm × 1.57 mm), with 8 mW/°C derating above 25°C ambient. Output capacitance Cob = 9.0 pF at VCB = 10 V enables stable operation in RF-coupled preamp stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 25 V - Maximum safe collector-emitter voltage before avalanche breakdown under open-base conditions. |
| IC | 1.5 A - Continuous DC collector current rating; supports high-current switching in relay drivers and power stage buffers. |
| hFE (IC = 100 mA) | 160–300 - D-grade DC current gain range ensures predictable base drive requirements in amplifier bias networks. |
| VCE(sat) | ≤ 0.5 V @ IC = 800 mA, IB = 80 mA - Low saturation voltage minimizes conduction loss in switching applications. |
| fT | 100 MHz - Current gain bandwidth product validates suitability for VHF preamplifier and oscillator buffer use. |
| RJA | 125 °C/W - Thermal resistance defines junction-to-ambient temperature rise per watt; requires adequate PCB copper area for 1 W operation. |
| Cob | 9.0 pF @ VCB = 10 V - Output capacitance impacts high-frequency stability and Miller effect in common-emitter configurations. |
Pinout & Package
SS8050DBU is housed in TO-92-3 plastic package (case 135AN), with leadform per mechanical drawing 98AON13880G. Dimensions: 4.825 mm × 4.76 mm footprint, axial leads, E-B-C pin order when viewed with flat side facing user and leads downward.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to ground or low-impedance return path; sets reference for base-emitter forward bias. |
| 2 (Base) | Control input | Receives current-limited drive to modulate collector current; requires series resistor to limit IB per hFE target. |
| 3 (Collector) | Current source terminal | Delivers amplified load current; must be connected to supply rail through load (e.g., speaker, relay coil, LED string). |
Key Features
| Feature | Design Value |
|---|---|
| D-grade hFE binning | Guaranteed 160–300 hFE at IC = 100 mA, enabling consistent gain matching in dual-transistor amplifier pairs. |
| Low VCE(sat) | ≤ 0.5 V under 800 mA load ensures <1.2 W total power loss in saturated switching, improving thermal margin. |
| RoHS-compliant Pb-free | Meets EU Directive 2011/65/EU and halogen-free/BFR-free requirements for environmentally regulated end equipment. |
| TO-92-3 mechanical standardization | Compatible with legacy through-hole assembly tooling and automated insertion systems using case 135AN footprint. |
Applications
| Portable Audio Amplifiers | DC Motor Drivers |
|---|---|
Use Scenario: Class B push-pull output stage in battery-powered AM/FM radios and headphone amplifiers. IC Role / Device Role / Timing Role: NPN switching/amplification transistor paired with complementary SS8550 PNP device. Use Value: Delivers 2 W output power with low crossover distortion due to tight hFE matching and low VCE(sat). | Use Scenario: Unidirectional H-bridge half-bridge driver for small brushed DC motors (e.g., toy vehicles, fans). IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor current flow via microcontroller GPIO. Use Value: Supports 1.5 A peak motor stall current while maintaining <0.5 V dropout, reducing heat generation in compact enclosures. |
| LED Constant-Current Drivers | Relay Interface Circuits |
Use Scenario: Linear current regulator for high-brightness white LEDs in emergency lighting and signage. IC Role / Device Role / Timing Role: Pass element in emitter-follower configuration with feedback resistor setting ILED. Use Value: Stable 100–800 mA current control across 5–20 V supply range, leveraging hFE-based current mirroring. | Use Scenario: Microcontroller-driven interface to 12 V/24 V electromagnetic relays in industrial control panels. IC Role / Device Role / Timing Role: Saturated switch isolating logic-level MCU outputs from inductive relay coils. Use Value: Fast turn-off with minimal stored charge (Cob = 9.0 pF) reduces relay release delay and flyback spike duration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT8050-D-TP (Micro Commercial) | Same hFE grade (160–300), identical TO-92-3 package, but RJA = 200 °C/W (higher thermal resistance). | Limited to <0.5 W continuous dissipation without heatsinking; unsuitable for sustained 1 W Class B audio output. | Select only for low-duty-cycle switching where thermal mass limits average power. |
| BC817-40 (Nexperia) | SMD SOT-23 package, lower IC = 500 mA, hFE = 250–630 at IC = 100 mA, VCEO = 45 V. | Not pin-compatible; requires PCB redesign; better suited for space-constrained digital logic interfacing than audio power stages. | Choose for surface-mount designs prioritizing board density over analog linearity or power handling. |
Compared with MMBT8050-D-TP and BC817-40, SS8050DBU provides superior thermal performance (RJA = 125 °C/W), higher current capability (1.5 A), and proven suitability for audio amplifier output stages-making it the preferred choice for through-hole, thermally demanding, medium-power linear applications.
Availability
SS8050DBU is available at Aetrix Electronics and suitable for portable audio amplifiers, relay interface circuits, LED constant-current drivers, and DC motor drivers requiring stable component supply and full RoHS compliance.
Supply support for SS8050DBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and consumer markets.
The SS8050DBU belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, medium-power linear amplification and switching applications in portable and industrial electronics.
FAQ
What is the hFE range guaranteed for SS8050DBU?
The SS8050DBU is binned to the D-grade hFE classification, guaranteeing a DC current gain of 160–300 when measured at VCE = 1 V and IC = 100 mA. This range is confirmed in the official onsemi datasheet (Rev. 2, February 2022) and applies specifically to the SS8050DBU top mark "S8050D". The SS8050DBU's hFE consistency supports matched-pair designs in push-pull amplifier configurations.
Is SS8050DBU pin-compatible with SS8550?
Yes, SS8050DBU is complementary and mechanically pin-compatible with the PNP SS8550, sharing the same TO-92-3 (case 135AN) package and E-B-C pinout. This allows direct pairing in Class B push-pull amplifier stages without layout changes. However, SS8050DBU is NPN while SS8550 is PNP, so polarity and biasing must be reversed in circuit design. Both devices are specified for 1.5 A IC and share identical absolute maximum ratings except for polarity-dependent voltages.
What is the maximum power dissipation of SS8050DBU at 70°C ambient?
At 70°C ambient, SS8050DBU's maximum power dissipation is derated from 1 W (at 25°C) by 8 mW/°C × (70 − 25) = 360 mW, resulting in a safe operating limit of 640 mW. This calculation follows the thermal characteristics table in the onsemi SS8050/D datasheet. Exceeding this limit risks junction temperature exceeding 150°C, potentially degrading reliability or causing thermal shutdown in unregulated circuits.
Does SS8050DBU support audio frequency amplification up to 20 kHz?
Yes, SS8050DBU supports full-audio-band amplification up to 20 kHz with low distortion. Its fT = 100 MHz and typical hFE > 160 at IC = 10 mA ensure sufficient gain margin well beyond audible frequencies. Measured performance in Figure 2 and Figure 6 of the onsemi datasheet confirms stable hFE response and low phase shift across 20 Hz–20 kHz when biased appropriately. The SS8050DBU is explicitly cited for "2 W output amplifier of portable radios" in its features list.
What is the meaning of the "DBU" suffix in SS8050DBU?
The "DBU" suffix in SS8050DBU indicates two specific attributes: "D" denotes the hFE classification grade (160–300), and "BU" signifies packaging in bulk (10,000 units per box) in Pb-free TO-92-3 case 135AN. This ordering code is defined in the "Ordering Information" section of the onsemi SS8050/D datasheet. The SS8050DBU top mark is "S8050D", confirming both the D-grade gain bin and Pb-free compliance.
SS8050DBU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 25 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 160 @ 100mA, 1V
- Power - Max:
- 1 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
SS8050DBU FAQ
1.How can I place an order for SS8050DBU through Aetrix?
Please submit a Request for Quotation (RFQ) for SS8050DBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SS8050DBU reliable?
The price and inventory of SS8050DBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SS8050DBU is usually 5 days.
3.What payment methods are accepted for SS8050DBU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SS8050DBU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SS8050DBU?
SS8050DBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SS8050DBU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SS8050DBU?
For technical support, including SS8050DBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SS8050DBU requirements.
6.How does Aetrix verify that SS8050DBU is sourced from the original manufacturer or authorized distributors?
All SS8050DBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SS8050DBU meets industry standards.
7.What is the process for return or replacement of SS8050DBU?
All SS8050DBU units undergo pre-shipment inspection (PSI). If there is an issue with SS8050DBU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SS8050DBU part is unused and in its original packaging.
Return procedure for SS8050DBU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SS8050DBU Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

,TO-226_straightlead.jpg)