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onsemi SS8050DTA

Part No.:
SS8050DTA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixSS8050DTA.pdf
Description:
TRANS NPN 25V 1.5A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,500

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Product details

Overview

SS8050DTA from onsemi is an NPN epitaxial silicon transistor in TO-92-3 (case 135AR) package, rated for 1.5 A collector current, 25 V VCEO, and 1 W power dissipation at 25°C. It delivers DC current gain (hFE) of 160–300 at IC = 100 mA, VCE = 1 V, and supports audio amplifier stages and switching applications in portable radios and power management circuits.

For engineers reviewing the SS8050DTA datasheet, pinout, applications, or equivalent options, key selection criteria include its VCEO = 25 V rating, hFE classification 'D', TO-92-3 leadformed package (case 135AR), saturation voltage VCE(sat) ≤ 0.5 V at IC = 800 mA/IB = 80 mA, and RoHS-compliant Pb-free construction.

Technical Context

This discrete NPN bipolar junction transistor operates in linear amplification and saturated switching modes. Its fT = 100 MHz at VCE = 10 V, IC = 50 mA enables use in low-to-moderate frequency signal amplification, while Cob = 9.0 pF at VCB = 10 V supports stable high-frequency biasing.

The device features complementary pairing with SS8550 (PNP), defined absolute maximum ratings including VCBO = 40 V and TJ = 150°C, and thermal resistance RJA = 125°C/W on standard FR-4 PCB (76 mm × 114 mm), enabling reliable operation in thermally constrained consumer and industrial designs.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 V - Maximum safe collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in switching circuits.
IC1.5 A - Continuous collector current handling capacity; supports medium-power load switching up to ~1.5 A DC.
hFE (Class D)160–300 - Verified DC current gain range at IC = 100 mA, VCE = 1 V; ensures predictable base drive sizing for saturation.
VCE(sat)≤ 0.5 V - Low saturation voltage at IC = 800 mA / IB = 80 mA; minimizes conduction loss in switching applications.
fT100 MHz - Current gain bandwidth product; confirms suitability for audio-frequency amplification and fast digital switching.
PD1 W - Maximum power dissipation at TA = 25°C; requires thermal derating (8 mW/°C) above ambient.
Cob9.0 pF - Output capacitance at VCB = 10 V; impacts high-frequency response and stability in amplifier feedback paths.

Pinout & Package

SS8050DTA uses the TO-92-3 case 135AR package - a leadformed variant with 4.83 mm × 4.76 mm footprint and standardized lead spacing. The package is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current exit path for majority carriersConnected to ground or low-side reference; polarity-sensitive terminal defining NPN topology.
2 (Base)Control electrode for carrier injectionReceives forward-biased drive current (IB) to regulate IC; requires current-limiting resistor in most applications.
3 (Collector)Current entry path for majority carriersConnected to load and supply rail; carries full switched or amplified output current (up to 1.5 A).

Key Features

FeatureDesign Value
Complementary PNP pairingValidated match with SS8550 for push-pull amplifier topologies requiring matched gain and voltage ratings.
High hFE Class DGuaranteed 160–300 hFE at IC = 100 mA ensures consistent small-signal amplification and reduced base drive requirements.
Low VCE(sat)≤ 0.5 V at IC = 800 mA enables efficient switching with <0.4 W conduction loss, critical for battery-powered devices.
RoHS & green compliancePb-free, halogen-free/BFR-free construction meets global environmental regulations without performance trade-offs.

Applications

Portable Audio AmplifiersDC-DC Converter Switching

Use Scenario: Class B push-pull output stage in AM/FM portable radios and headphone drivers.

IC Role / Device Role / Timing Role: NPN switching/amplifying transistor delivering audio signal swing across speaker load.

Use Value: High hFE (160–300) and low VCE(sat) (<0.5 V) minimize crossover distortion and heat generation in compact enclosures.

Use Scenario: Low-side switch in buck converter feedback or auxiliary power rail control.

IC Role / Device Role / Timing Role: Saturated-switching transistor regulating energy transfer to inductor-capacitor network.

Use Value: 1.5 A IC rating and 25 V VCEO support 12 V input/5 V output conversion at moderate load currents.

LED Driver CircuitsMicrocontroller Interface Buffer

Use Scenario: Constant-current driver for indicator or backlight LEDs in handheld instrumentation.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink for LED anode connection.

Use Value: Precise hFE binning (Class D) allows accurate current setting via base resistor, reducing calibration overhead.

Use Scenario: Level-shifting and current-boosting interface between 3.3 V MCU GPIO and 5 V peripheral logic.

IC Role / Device Role / Timing Role: Digital switch translating logic states while sourcing/sinking >10 mA load current.

Use Value: Fast fT = 100 MHz and low VBE(on) = 1.0 V ensure clean edge transitions and minimal propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SS8050DBUSame die, TO-92-3 case 135AN (non-leadformed); RJA = 125°C/W on same PCB, but different lead geometry.Identical electrical specs; differs only in packaging - bulk box vs. fan-fold, straight leads vs. leadformed.Select SS8050DBU for automated through-hole insertion where straight leads are required.
MPSA06Lower IC = 500 mA, higher VCEO = 80 V, hFE = 100–300 (unbinned), TO-92 case 29.Suitable for higher-voltage, lower-current signal switching; not recommended for >500 mA loads.Choose MPSA06 when VCEO > 25 V is mandatory and load current remains below 0.5 A.

Compared with SS8050DBU, SS8050DTA offers identical silicon performance in a leadformed TO-92-3 (case 135AR) optimized for manual or semi-automated assembly; versus MPSA06, SS8050DTA provides 3× higher current capability but 55 V lower breakdown voltage - making it preferable for cost-sensitive, medium-current consumer electronics.

Availability

SS8050DTA is available at Aetrix Electronics and suitable for portable audio amplifiers, DC-DC converter switching, and LED driver circuits requiring stable component supply, consistent hFE binning, and RoHS-compliant manufacturing.

Supply support for SS8050DTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The SS8050DTA belongs to onsemi's general-purpose bipolar transistor family designed for cost-effective, high-reliability linear amplification and switching in battery-powered and space-constrained electronics.

FAQ

What is the package type and lead configuration of SS8050DTA?

SS8050DTA uses the TO-92-3 package, specifically case 135AR - a leadformed variant with bent leads optimized for manual soldering and semi-automated assembly. Its mechanical outline matches 4.83 mm × 4.76 mm footprint, and pin 1 is emitter, pin 2 is base, pin 3 is collector. This differs from the straight-lead case 135AN used in SS8050DBU.

What does the 'D' in SS8050DTA signify?

The 'D' in SS8050DTA denotes the hFE gain classification per onsemi's datasheet: SS8050DTA guarantees DC current gain between 160 and 300 at VCE = 1 V and IC = 100 mA. This binning ensures predictable base drive design and consistent performance across production lots.

Is SS8050DTA RoHS compliant and lead-free?

Yes, SS8050DTA is fully RoHS compliant and Pb-free, halogen-free/BFR-free per onsemi's datasheet revision February 2022. It meets EU Directive 2011/65/EU and related global environmental standards without compromising electrical or thermal performance.

How does SS8050DTA compare to SS8550?

SS8050DTA is the NPN complement to the PNP SS8550, sharing matching voltage ratings (VCEO = 25 V), current capability (IC = 1.5 A), and thermal characteristics. They are explicitly designated as complementary pairs in onsemi's documentation for push-pull amplifier and H-bridge configurations.

What is the maximum power dissipation and thermal derating for SS8050DTA?

SS8050DTA has a maximum power dissipation of 1 W at TA = 25°C, with linear derating of 8 mW/°C above that temperature. Its thermal resistance RJA is 125°C/W on a standard FR-4 PCB (76 mm × 114 mm), meaning junction temperature rises 125°C per watt dissipated under those conditions.

SS8050DTA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Cut Tape (CT)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1.5 A
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
Power - Max:
1 W
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

SS8050DTA FAQ

1.How can I place an order for SS8050DTA through Aetrix?

Please submit a Request for Quotation (RFQ) for SS8050DTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SS8050DTA reliable?

The price and inventory of SS8050DTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SS8050DTA is usually 5 days.

3.What payment methods are accepted for SS8050DTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SS8050DTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SS8050DTA?

SS8050DTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SS8050DTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SS8050DTA?

For technical support, including SS8050DTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SS8050DTA requirements.

6.How does Aetrix verify that SS8050DTA is sourced from the original manufacturer or authorized distributors?

All SS8050DTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SS8050DTA meets industry standards.

7.What is the process for return or replacement of SS8050DTA?

All SS8050DTA units undergo pre-shipment inspection (PSI). If there is an issue with SS8050DTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SS8050DTA part is unused and in its original packaging.

Return procedure for SS8050DTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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