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onsemi SS8550BBU
- Part No.:
- SS8550BBU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
SS8550BBU.pdf
- Description:
- TRANS PNP 25V 1.5A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,780
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Product details
Overview
SS8550BBU from onsemi is a PNP epitaxial silicon transistor in TO-92-3 package, rated for −25 V VCEO, −1.5 A IC, and 1 W power dissipation at 25°C, with DC current gain hFE of 85–160 at IC = −100 mA, used in Class B push-pull audio amplifier stages of portable radios.
For engineers reviewing the SS8550BBU datasheet, pinout, applications, or equivalent options, key selection considerations include complementary pairing with SS8050, saturation voltage under high-current drive (VCE(sat) ≤ −0.50 V at IC = −800 mA), and thermal derating (8 mW/°C above 25°C).
Technical Context
This PNP bipolar junction transistor operates in linear and switching modes, with breakdown voltages specified as −40 V VCBO, −25 V VCEO, and −6 V VEBO. Its fT reaches 100–200 MHz at VCE = −10 V and IC = −50 mA, supporting mid-frequency amplification tasks.
DC current gain varies by collector current: hFE = 45–170 at IC = −5 mA, 85–160 at IC = −100 mA, and 40–80 at IC = −800 mA. Saturation characteristics are defined at IC/IB = 10, with VCE(sat) ≤ −0.50 V and VBE(sat) ≤ −1.20 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −25 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration |
| IC | −1.5 A - Continuous DC collector current rating, defining maximum load-handling capability |
| PD | 1 W - Power dissipation limit at 25°C ambient, derated by 8 mW/°C above that temperature |
| hFE @ IC = −100 mA | 85–160 - DC current gain range determining base drive requirements for switching or amplification |
| VCE(sat) @ IC = −800 mA | ≤ −0.50 V - Low saturation voltage enabling efficient operation in switching applications with minimal conduction loss |
| fT | 100–200 MHz - Current gain bandwidth product indicating usable frequency range for small-signal amplification |
Pinout & Package
SS8550BBU is housed in TO-92-3 package (case 135AN), with standard lead configuration: emitter (pin 1), base (pin 2), collector (pin 3), aligned to JEDEC TO-92 mechanical outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current exit terminal for PNP device | Connected to higher potential rail in common-base or common-collector configurations; defines reference for biasing |
| 2 (Base) | Control terminal for carrier injection | Receives forward-biased current to turn on transistor; requires current-limiting resistor in discrete driver circuits |
| 3 (Collector) | Current entry terminal for PNP device | Typically tied to ground or low-side return path; carries full load current in switching applications |
Key Features
| Feature | Design Value |
|---|---|
| Complementary pairing | Designed as direct complement to NPN SS8050, enabling matched push-pull output stages without gain or timing mismatch |
| RoHS compliance | Pb-free, halogen-free/BFR-free construction meets EU RoHS Directive 2011/65/EU and JEDEC JS709 standards |
| Thermal robustness | Junction-to-ambient thermal resistance RJA = 125°C/W enables reliable operation up to 150°C junction temperature |
| Low leakage | ICBO ≤ −100 nA at VCB = −35 V ensures stable cutoff state in battery-powered systems with long standby intervals |
Applications
| Portable Radio Amplifier | LED Driver Switch |
|---|---|
Use Scenario: Class B push-pull audio output stage in AM/FM portable radios powered by 3–6 V batteries. IC Role / Device Role / Timing Role: PNP transistor providing half-cycle amplification in complementary pair with SS8050. Use Value: Delivers 2 W output power with low VCE(sat) (≤ −0.50 V) minimizing heat generation and extending battery life. | Use Scenario: High-side current switch controlling 20–100 mA LED strings in handheld instrumentation displays. IC Role / Device Role / Timing Role: PNP switch turning on/off LED anode supply via base current control. Use Value: Supports fast turn-on with VBE(on) ≤ −1.00 V at IC = −10 mA, enabling responsive brightness control. |
| DC Motor Control | Level Shifter Interface |
Use Scenario: Low-voltage (≤ 6 V) brushed DC motor direction control using H-bridge half-bridge topology. IC Role / Device Role / Timing Role: PNP high-side switch sourcing current to motor winding during forward drive phase. Use Value: Handles IC = −1.5 A peak current with safe SOA margin, preventing thermal runaway during stall conditions. | Use Scenario: Bidirectional logic-level translation between 3.3 V microcontroller GPIO and 5 V peripheral enable lines. IC Role / Device Role / Timing Role: Inverting level shifter using common-emitter configuration with fixed bias network. Use Value: Provides clean signal inversion with hFE ≥ 85 at IC = −100 mA, ensuring noise-immune interface across voltage domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SS8550DBU | Higher hFE bin (160–300 at IC = −100 mA) vs. SS8550BBU's 85–160; identical package and absolute ratings | Better suited for low-base-drive designs requiring higher current gain stability at medium currents | Select SS8550DBU when base drive current must be minimized without sacrificing switching speed |
| MPSA92 | Higher VCEO (−300 V) but lower IC (−500 mA) and PD (625 mW); TO-92 package with different pinout (E-C-B) | Used in high-voltage, low-current switching (e.g., CRT deflection, relay drivers), not audio amplification | Choose MPSA92 only for high-voltage isolation needs; not interchangeable due to pinout and gain profile mismatch |
Compared with SS8550DBU and MPSA92, SS8550BBU offers balanced gain-bandwidth performance and thermal capability for portable audio and medium-current switching, while avoiding over-specification in voltage or under-specification in current handling.
Availability
SS8550BBU is available at Aetrix Electronics and suitable for portable radio amplifiers, LED driver switches, DC motor control circuits, and level-shifting interfaces requiring stable component supply and RoHS-compliant packaging.
Supply support for SS8550BBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SS8550 series belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, high-volume consumer electronics requiring reliable PNP switching and amplification in TO-92 packages.
FAQ
What is the pin configuration of SS8550BBU?
The SS8550BBU uses standard TO-92-3 pinout: pin 1 is emitter, pin 2 is base, and pin 3 is collector. This matches JEDEC case 135AN mechanical outline and is consistent across all SS8550 variants including SS8550BBU, SS8550CBU, and SS8550DBU. Always verify orientation using the marking "S8550B" on the device body before PCB layout.
Is SS8550BBU RoHS compliant?
Yes, SS8550BBU is RoHS compliant, Pb-free, and halogen-free/BFR-free per EU Directive 2011/65/EU and onsemi's internal material specifications. The device carries no restricted substances above threshold limits and is qualified for use in environmentally regulated markets including the EU, China, and South Korea.
How does SS8550BBU differ from SS8550CBU?
SS8550BBU and SS8550CBU share identical electrical specifications and TO-92-3 (case 135AN) packaging, but differ in hFE binning: SS8550BBU is rated 85–160 at IC = −100 mA, while SS8550CBU is binned 120–200. Both are Pb-free and functionally interchangeable where gain tolerance allows.
Can SS8550BBU replace SS8550DBU in a circuit?
SS8550BBU can replace SS8550DBU in most circuits, but gain-dependent designs may require revalidation: SS8550DBU has higher hFE (160–300) than SS8550BBU (85–160). If base drive is marginal or loop stability relies on precise gain, substitute only after verifying IB margin and transient response with SS8550BBU.
What is the maximum operating temperature for SS8550BBU?
The SS8550BBU has a maximum junction temperature (TJ) of 150°C and storage temperature range of −65°C to +150°C. At ambient temperatures above 25°C, power dissipation must be derated linearly at 8 mW/°C; for example, at 75°C ambient, max allowable PD drops to 600 mW.
SS8550BBU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 25 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 80mA, 800mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 85 @ 100mA, 1V
- Power - Max:
- 1 W
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
SS8550BBU FAQ
1.How can I place an order for SS8550BBU through Aetrix?
Please submit a Request for Quotation (RFQ) for SS8550BBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SS8550BBU reliable?
The price and inventory of SS8550BBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SS8550BBU is usually 5 days.
3.What payment methods are accepted for SS8550BBU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SS8550BBU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SS8550BBU?
SS8550BBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SS8550BBU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SS8550BBU?
For technical support, including SS8550BBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SS8550BBU requirements.
6.How does Aetrix verify that SS8550BBU is sourced from the original manufacturer or authorized distributors?
All SS8550BBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SS8550BBU meets industry standards.
7.What is the process for return or replacement of SS8550BBU?
All SS8550BBU units undergo pre-shipment inspection (PSI). If there is an issue with SS8550BBU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SS8550BBU part is unused and in its original packaging.
Return procedure for SS8550BBU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SS8550BBU Tags
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MMBT3906LT1G
onsemi
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Diodes Incorporated
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MMBT3904LT1G
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MMBT3906-7-F
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Micro Commercial Co
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MMBT2222A-7-F
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.
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SMMBT3904LT1G
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MMBTA06LT1G
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