onsemi SS9011GBU

Overview

SS9011GBU from Fairchild Semiconductor is an NPN epitaxial silicon transistor in TO-92 package, rated for 30 V V_CEO, 30 mA I_C, and 400 mW P_C, with h_FE range 72–108 (Class G), used in AM/FM IF amplifier stages and general-purpose small-signal amplification.

For engineers reviewing the SS9011GBU datasheet, pinout, applications, or equivalent options, key selection factors include DC current gain classification, V_CE(sat) at 10 mA/1 mA drive, noise figure at 1 MHz, f_T bandwidth, and TO-92 mechanical compatibility for through-hole audio and RF front-end designs.

Technical Context

This discrete NPN transistor operates as a linear small-signal amplifier with fixed bias configuration support. Its 2.0 MHz f_T, 4.0 dB noise figure at 1 MHz (R_S = 500 Ω), and low 0.08–0.3 V V_CE(sat) enable stable gain in IF amplifier chains where signal integrity and power efficiency are critical.

The device features tight h_FE binning (Class G: 72–108), low leakage (I_CBO ≤ 100 nA), and thermal robustness (T_J = 150°C), making it suitable for temperature-stable analog stages in consumer radio receivers and portable communication equipment.

Key Specifications

Pinout & Package

SS9011GBU is housed in a standard TO-92 plastic package with 3 leads: Emitter (Lead 1), Base (Lead 2), Collector (Lead 3). Package outline conforms to JEDEC TO-92 variant with body height 4.58 mm max and lead pitch 1.27 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar small-signal NPN transistor applications.

Compared with 2N3904 and BC547C, SS9011GBU offers binned h_FE and verified 4.0 dB NF for repeatable IF amplifier performance, while its 30 V rating and TO-92 pinout provide direct fit in legacy radio designs requiring predictable gain and low noise.

Availability

SS9011GBU is available at Aetrix Electronics and suitable for AM/FM radio IF amplifiers, portable audio preamplifiers, low-frequency oscillator circuits, and general-purpose small-signal switching applications requiring stable component supply and long-term obsolescence management.

Supply support for SS9011GBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in discrete power and analog components before acquisition by ON Semiconductor in 2016.

The SS9011GBU belongs to Fairchild's general-purpose bipolar transistor family, designed specifically for cost-sensitive, high-reliability analog signal conditioning in consumer radio and audio equipment.

FAQ

What is the pin configuration of SS9011GBU?

The SS9011GBU uses a standard TO-92 package with pin 1 as Emitter, pin 2 as Base, and pin 3 as Collector. This E-B-C arrangement is confirmed in the original Fairchild datasheet Rev. A4 and matches common industry convention for small-signal NPN transistors. No alternate pinouts are documented for SS9011GBU.

What does the 'G' suffix in SS9011GBU indicate?

The 'G' in SS9011GBU denotes h_FE classification per Fairchild's binning scheme: Class G guarantees a DC current gain range of 72–108 at V_CE = 5 V and I_C = 1 mA. The 'U' suffix indicates tape-and-reel packaging per standard Fairchild ordering conventions.

Is SS9011GBU suitable for RF amplifier applications above 1 MHz?

The SS9011GBU has a specified f_T of 2.0 MHz and is characterized for use in AM/FM IF amplifier stages (typically 455 kHz). While it can operate up to ~1 MHz with reduced gain, it is not optimized for VHF or UHF RF amplification due to limited bandwidth and uncharacterized S-parameters beyond 2 MHz.

What is the maximum power dissipation of SS9011GBU at 70°C ambient?

SS9011GBU has a 400 mW P_C rating at T_A = 25°C and a thermal resistance θ_JA of approximately 300°C/W (inferred from TO-92 package data). At 70°C ambient, derated power is ~267 mW, calculated as 400 mW × (1 − (70−25)/150), respecting the 150°C maximum junction temperature.

Can SS9011GBU replace BC547 in existing designs?

SS9011GBU and BC547 share TO-92 packaging and E-B-C pinout, but differ in h_FE (72–108 vs 110–800), V_CEO (30 V vs 45 V), and noise performance (4.0 dB vs uncharacterized). Replacement is feasible only if circuit gain margin and voltage headroom accommodate these differences; verification of bias point stability is required.