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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi SS9013GBU

Name: SS9013GBU
Brand: onsemi
SKU: SS9013GBU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SS9013GBU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: SS9013GBU.pdf

Description:: TRANS NPN 20V 0.5A TO-92-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,333

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Product details

Overview

SS9013GBU from Fairchild Semiconductor is an NPN epitaxial silicon transistor in TO-92 package, rated for 20 V V_CEO, 500 mA I_C, 625 mW P_C, with h_FE range 112–166 (Class G), and V_CE(sat) ≤ 0.6 V at I_C = 500 mA / I_B = 50 mA - used in Class B push-pull audio output stages of portable radios.

For engineers reviewing the SS9013GBU datasheet, pinout, applications, or equivalent options, key selection factors include verified DC current gain linearity, low saturation voltage under high collector current, thermal stability up to 150°C junction temperature, and complementary pairing with SS9012 for push-pull amplifier design.

Technical Context

This NPN bipolar junction transistor operates in linear and saturation regions with defined breakdown limits: 40 V V_CBO, 20 V V_CEO, and 5 V V_EBO. Its h_FE is specified at two test points - 64–202 min–max across classifications - with Class G (112–166) confirmed for SS9013GBU.

V_CE(sat) and V_BE(sat) are characterized at I_C = 500 mA / I_B = 50 mA, enabling reliable switching and analog amplification in low-voltage, medium-current circuits where thermal derating and gain consistency matter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	20 V - maximum safe collector-emitter voltage before avalanche breakdown in common-emitter configuration
I_C	500 mA - continuous collector current rating defining usable drive capability in amplifier or switch roles
P_C	625 mW - total power dissipation limit at T_A = 25°C, requiring thermal management above ambient
h_FE (Class G)	112–166 - guaranteed DC current gain range at V_CE = 1 V, I_C = 50 mA, supporting predictable biasing
V_CE(sat)	≤ 0.6 V - low saturation voltage ensures minimal power loss and heat generation when fully on
T_J	150°C - maximum junction temperature enabling operation in compact, unventilated enclosures

Pinout & Package

SS9013GBU is housed in a standard TO-92 plastic package with 3 leads: emitter, base, and collector arranged in linear order (1–2–3 from left to right when flat side faces viewer, lead tips down).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit path for majority carriers	Connected to ground or low-impedance return; sets reference for bias network and gain stability
2 (Base)	Control terminal for minority carrier injection	Receives current-limited drive signal; small-signal input impedance ~1–5 kΩ depending on operating point
3 (Collector)	Current entry path and primary power-handling node	Connects to load or supply rail; must accommodate 500 mA and dissipate up to 625 mW with heatsinking if needed

Key Features

Feature	Design Value
High h_FE linearity	Gain remains stable across I_C = 1–500 mA range, reducing distortion in Class A/B audio amplifiers
Complementary pairing	Designed as NPN counterpart to PNP SS9012, enabling matched push-pull output stages
Low V_CE(sat)	0.16–0.6 V at full rated current ensures >90% efficiency in saturated-switch applications
TO-92 mechanical standardization	Compatible with automated through-hole insertion and wave soldering per JEDEC TO-92 spec

Applications

Portable Radio Output Stage	DC Motor Driver (Small)
Use Scenario: Class B push-pull audio amplifier driving 8 Ω speaker in battery-powered AM/FM radio. IC Role / Device Role / Timing Role: NPN output transistor delivering peak 500 mA current swing with minimal crossover distortion. Use Value: High h_FE linearity and low V_CE(sat) preserve battery life and audio fidelity at low supply voltages (3–6 V).	Use Scenario: H-bridge half-bridge leg controlling bidirectional rotation of 3–6 V brushed DC motor in toys or actuators. IC Role / Device Role / Timing Role: Medium-current NPN switch turning motor winding on/off under microcontroller GPIO control. Use Value: 625 mW power rating and 150°C junction temperature allow sustained duty cycles without thermal shutdown.
LED Constant-Current Sink	Signal-Level Shifter
Use Scenario: Precision current sink regulating 100–400 mA through high-brightness LED strings in indicator panels. IC Role / Device Role / Timing Role: Linear-mode current regulator using emitter-degeneration resistor and fixed base bias. Use Value: Tight h_FE tolerance (Class G) enables ±5% current accuracy without feedback, reducing component count.	Use Scenario: Level translation between 3.3 V logic (MCU) and 5 V peripheral interface with <1 µs propagation delay. IC Role / Device Role / Timing Role: Common-emitter inverter providing non-inverting or inverting logic shift via resistor biasing. Use Value: f_T > 10 MHz (per typical curves) supports clean edge transitions up to 1–2 MHz clock rates.

Portable Radio Output Stage

DC Motor Driver (Small)

Use Scenario: Class B push-pull audio amplifier driving 8 Ω speaker in battery-powered AM/FM radio.

IC Role / Device Role / Timing Role: NPN output transistor delivering peak 500 mA current swing with minimal crossover distortion.

Use Value: High h_FE linearity and low V_CE(sat) preserve battery life and audio fidelity at low supply voltages (3–6 V).

Use Scenario: H-bridge half-bridge leg controlling bidirectional rotation of 3–6 V brushed DC motor in toys or actuators.

IC Role / Device Role / Timing Role: Medium-current NPN switch turning motor winding on/off under microcontroller GPIO control.

Use Value: 625 mW power rating and 150°C junction temperature allow sustained duty cycles without thermal shutdown.

LED Constant-Current Sink

Signal-Level Shifter

Use Scenario: Precision current sink regulating 100–400 mA through high-brightness LED strings in indicator panels.

IC Role / Device Role / Timing Role: Linear-mode current regulator using emitter-degeneration resistor and fixed base bias.

Use Value: Tight h_FE tolerance (Class G) enables ±5% current accuracy without feedback, reducing component count.

Use Scenario: Level translation between 3.3 V logic (MCU) and 5 V peripheral interface with <1 µs propagation delay.

IC Role / Device Role / Timing Role: Common-emitter inverter providing non-inverting or inverting logic shift via resistor biasing.

Use Value: f_T > 10 MHz (per typical curves) supports clean edge transitions up to 1–2 MHz clock rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC547C	Lower I_C (100 mA), lower P_C (500 mW), h_FE 420–800 (higher but narrower range)	Not suitable for 500 mA loads; better for low-noise preamp stages than power output	Select BC547C only when gain precision > current drive is prioritized and thermal load is light
MPSA13	Higher h_FE (50–250), same TO-92, but V_CEO = 30 V and P_C = 700 mW	Acceptable substitute with margin in voltage and power, but h_FE spread may affect bias stability	MPSA13 offers headroom in V_CEO and P_C, but verify bias network compatibility due to wider h_FE range

Compared with BC547C and MPSA13, SS9013GBU delivers optimal balance of 500 mA current handling, 20 V breakdown, and tightly binned Class G h_FE, making it preferred for cost-sensitive, medium-power linear and switching tasks where gain predictability and thermal robustness are jointly critical.

Availability

SS9013GBU is available at Aetrix Electronics and suitable for portable audio amplifiers, small-motor drivers, LED current regulation, and logic-level translation requiring stable component supply across production volumes.

Supply support for SS9013GBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The SS9013GBU belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for cost-effective, reliable amplification and switching in consumer electronics and industrial controls.

FAQ

What is the h_FE range for SS9013GBU?

The SS9013GBU is classified as Class G, with a guaranteed DC current gain (h_FE) range of 112 to 166 when measured at V_CE = 1 V and I_C = 50 mA. This binning ensures consistent biasing behavior across units, and the SS9013GBU datasheet confirms this classification explicitly in its h_FE table.

Is SS9013GBU pin-compatible with SS9012?

No - SS9013GBU is an NPN transistor while SS9012 is a PNP device; they share identical TO-92 packaging and complementary electrical ratings (e.g., symmetric V_CEO, I_C, P_C), but their pinouts are mirror images. In a push-pull pair, SS9013GBU (E-B-C) and SS9012 (C-B-E) occupy opposite positions in the circuit layout.

What is the maximum allowable collector-emitter voltage for SS9013GBU?

The absolute maximum collector-emitter voltage (V_CEO) for SS9013GBU is 20 V at T_A = 25°C. Exceeding this value risks avalanche breakdown; derating is required above 25°C ambient, and operation should remain below 16 V in designs targeting long-term reliability per Fairchild's recommended practice.

Can SS9013GBU be used in switching applications?

Yes - SS9013GBU supports switching use with verified V_CE(sat) ≤ 0.6 V at I_C = 500 mA / I_B = 50 mA, and f_T > 10 MHz per typical curves. Its TO-92 package limits switching speed in high-frequency (>1 MHz) or high-dissipation scenarios, but it performs reliably in sub-500 kHz digital or PWM-driven loads like relay drivers or LED dimmers.

What is the junction-to-ambient thermal resistance (R_θJA) for SS9013GBU?

The SS9013GBU datasheet does not specify R_θJA directly, but based on its TO-92 package and 625 mW power rating at T_A = 25°C, typical R_θJA is ~200°C/W. For reliable operation above 100 mW dissipation, PCB copper area or minimal heatsinking is advised - and the SS9013GBU junction temperature must stay ≤150°C.

SS9013GBU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 112 @ 50mA, 1V

Power - Max:: 625 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

SS9013GBU FAQ

1.How can I place an order for SS9013GBU through Aetrix?

Please submit a Request for Quotation (RFQ) for SS9013GBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SS9013GBU reliable?

The price and inventory of SS9013GBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SS9013GBU is usually 5 days.

3.What payment methods are accepted for SS9013GBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SS9013GBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SS9013GBU?

SS9013GBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SS9013GBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SS9013GBU?

For technical support, including SS9013GBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SS9013GBU requirements.

6.How does Aetrix verify that SS9013GBU is sourced from the original manufacturer or authorized distributors?

All SS9013GBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SS9013GBU meets industry standards.

7.What is the process for return or replacement of SS9013GBU?

All SS9013GBU units undergo pre-shipment inspection (PSI). If there is an issue with SS9013GBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SS9013GBU part is unused and in its original packaging.

Return procedure for SS9013GBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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