Microchip Technology SST39LF010-45-4C-WHE-T

Overview

SST39LF010-45-4C-WHE-T from Microchip Technology is a 1 Mbit (128K × 8) CMOS Multi-Purpose Flash memory IC with 45 ns read access time, single 3.0–3.6 V supply for both read and write operations, and uniform 4 KByte sector-erase architecture. It serves as nonvolatile program/data storage in embedded microcontroller systems requiring field-upgradable firmware.

For engineers reviewing the SST39LF010-45-4C-WHE-T datasheet, SST39LF010-45-4C-WHE-T pinout, SST39LF010-45-4C-WHE-T application, or SST39LF010-45-4C-WHE-T equivalent, key selection criteria include JEDEC-standard x8 parallel interface compatibility, SuperFlash® technology endurance (100,000 cycles), 100-year data retention, and support for software data protection command sequences.

Technical Context

The SST39LF010-45-4C-WHE-T implements SST's proprietary SuperFlash® split-gate cell architecture with thick-oxide tunneling injector, enabling fixed erase/program timing independent of cycle count. It uses standard JEDEC-compliant command sets (e.g., 6-byte sector-erase sequence: 5555H/AAH → 2AAAH/55H → 5555H/80H → 5555H/AAH → 2AAAH/55H → SAX/30H) and supports both CE#- and WE#-controlled write operations.

Operation relies on latched address/data bus with tri-state outputs controlled by CE# and OE#, and includes dual end-of-write detection via Data# Polling (DQ7) and Toggle Bit (DQ6). Internal VPP generation eliminates need for external high-voltage programming supply.

Key Specifications

Pinout & Package

Package: 32-lead TSOP (8 mm × 14 mm), RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Compared with AT29LV010A-15JI and SST39VF010-70-4C-WHE, the SST39LF010-45-4C-WHE-T delivers superior timing (45 ns), lower active power (5 mA vs. 15 mA), and proven SuperFlash® endurance stability-making it optimal for performance-constrained, high-reliability embedded systems.

Availability

SST39LF010-45-4C-WHE-T is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device configuration memory, and automotive body control module applications requiring stable component supply and long-term obsolescence management.

Supply support for SST39LF010-45-4C-WHE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global provider of microcontrollers, analog, FPGA, and memory solutions, acquired Silicon Storage Technology (SST) in 2010 to expand its nonvolatile memory portfolio.

The SST39LF series was designed specifically for cost-sensitive, high-reliability embedded applications requiring fast parallel flash with robust data integrity-leveraging SuperFlash® technology to deliver best-in-class endurance and retention.

FAQ

What is the maximum operating frequency supported by SST39LF010-45-4C-WHE-T?

The SST39LF010-45-4C-WHE-T does not specify a maximum clock frequency, as it is an asynchronous parallel flash memory. Its 45 ns read access time defines the minimum read cycle time (TRC ≥ 45 ns), supporting effective bus rates up to ~22 MHz in systems with zero wait states. The device uses CE#, OE#, and WE# control signals rather than a clock input, so timing compliance depends on meeting AC specifications like TAA, TOE, and TCE-not a system clock frequency.

Does SST39LF010-45-4C-WHE-T require an external VPP voltage for programming?

No, the SST39LF010-45-4C-WHE-T does not require an external VPP voltage. It integrates an internal charge pump that generates the high voltage needed for programming and erasing using only the standard 3.0–3.6 V VDD supply. This eliminates the need for external high-voltage circuitry and simplifies board design-consistent with the "Single Voltage Read and Write Operations" feature stated in the official datasheet.

How many address lines does SST39LF010-45-4C-WHE-T use, and what is the highest address bit?

The SST39LF010-45-4C-WHE-T uses 17 address lines (A0–A16) to access its 128K × 8 organization. A16 is the most significant address bit (AMS) for this 1 Mbit density, as confirmed in the datasheet's Pin Description table and timing diagrams. This matches the 131,072-byte capacity (2¹⁷ = 131,072), and is distinct from higher-density variants (e.g., SST39LF020 uses A17 as AMS).

Is SST39LF010-45-4C-WHE-T compatible with JEDEC-standard x8 flash command sets?

Yes, the SST39LF010-45-4C-WHE-T conforms fully to JEDEC standard pinouts and command sets for x8 parallel flash memories. It supports industry-standard software data protection sequences (e.g., 5555H/AAH → 2AAAH/55H → 5555H/A0H for byte-program), sector-erase (30H), and chip-erase (10H) commands. This enables interoperability with existing flash programming tools and boot ROM drivers designed for JEDEC-compliant devices.

What package type is used for SST39LF010-45-4C-WHE-T, and is it RoHS-compliant?

The SST39LF010-45-4C-WHE-T is packaged in a 32-lead TSOP (8 mm × 14 mm) with gull-wing leads, and is RoHS-compliant per the manufacturer's datasheet (DS25023A). The "WHE-T" suffix explicitly denotes the TSOP package variant, and the device meets lead-free soldering requirements with 260°C reflow capability for 10 seconds-verified in the Absolute Maximum Ratings section.