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Microchip Technology SST39LF040-55-4C-NHE-T

Part No.:
SST39LF040-55-4C-NHE-T
Manufacturer:
Microchip Technology
Category:
Memory
Package:
32-LCC (J-Lead)
Datasheet:
AetrixSST39LF040-55-4C-NHE-T.pdf
Description:
IC FLASH 4MBIT PARALLEL 32PLCC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:749

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Product details

Overview

SST39LF040-55-4C-NHE-T from Microchip Technology is a 4-Mbit (512K × 8) CMOS Multi-Purpose Flash memory IC with 55 ns read access time, single 3.0V–3.6V supply for both read and write operations, and uniform 4-Kbyte sector erase architecture. It serves as nonvolatile program/data storage in embedded microcontroller systems requiring field-upgradable firmware.

For engineers reviewing the SST39LF040-55-4C-NHE-T datasheet, SST39LF040-55-4C-NHE-T pinout, SST39LF040-55-4C-NHE-T application, or SST39LF040-55-4C-NHE-T equivalent, this page delivers verified electrical specs, JEDEC-compliant x8 interface behavior, SuperFlash® reliability metrics, and real-world use context for industrial control, networking boot code, and legacy BIOS storage.

Technical Context

This device implements Microchip's proprietary SuperFlash® split-gate cell technology, enabling fixed 18 ms sector erase and 14 µs byte program times independent of endurance cycle count. Its command-set architecture uses standard JEDEC x8 pinouts and requires three-byte software data protection (SDP) for programming and six-byte sequences for sector/chip erase.

The SST39LF040-55-4C-NHE-T supports two end-of-write detection methods-Data# Polling (DQ7) and Toggle Bit (DQ6)-and features hardware safeguards including noise/glitch immunity (<5 ns pulse rejection), VDD power-up/down detection (<1.5V inhibit), and write-inhibit mode via CE#/OE#/WE# control logic.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (512K × 8), directly maps to 512 KB of byte-addressable nonvolatile storage
Read Access Time 55 ns maximum - enables direct execution from flash (XIP) in 14 MHz bus systems without wait states
Supply Voltage 3.0V–3.6V - single-supply operation eliminates need for charge pumps or auxiliary regulators
Endurance 100,000 program/erase cycles - supports frequent firmware updates over product lifetime
Data Retention Greater than 100 years - ensures long-term integrity of stored configuration or calibration data
Active Current 5 mA typical at 14 MHz - reduces system power budget during active read operations
Standby Current 1 µA typical - enables ultra-low-power sleep modes in battery-backed applications

Pinout & Package

32-Lead PLCC (Plastic Leaded Chip Carrier) package with JEDEC-standard x8 parallel interface. Pin 1 is NC; pins 6 and 9 are NC for this variant. AMS = A18 (most significant address).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs A0–A17 select byte location; A18 (AMS) used only for sector/block selection during erase
DQ0–DQ7 Data I/O Bidirectional 8-bit data bus; tri-stated when CE# or OE# high; latched internally during write
CE# Chip Enable Active-low chip select; device enters standby (1 µA) when high
OE# Output Enable Active-low output gate; controls DQ0–DQ7 drive state independently of CE#
WE# Write Enable Active-low write strobe; initiates byte program, sector erase, or chip erase on rising edge
VDD Power Supply 3.0V–3.6V supply; powers all internal logic and SuperFlash® tunneling circuitry
VSS Ground Reference return path for all I/O and core circuitry
NC No Connection Pins 1, 6, 9 unconnected - must be left floating or tied to ground per layout guidelines

Key Features

Feature Design Value
SuperFlash® Technology Fixed 14 µs byte program and 18 ms sector erase times - eliminates software derating across lifetime
Uniform 4-Kbyte Sectors 128 erasable sectors enable granular firmware partitioning and partial updates without full chip erase
JEDEC x8 Pinout Compliance Drop-in replacement for industry-standard 4-Mbit parallel flash devices - no PCB redesign required
Hardware + Software Data Protection Glitch immunity, VDD monitoring, and mandatory SDP command sequences prevent accidental writes during power transitions
Toggle Bit / Data# Polling Asynchronous status reporting via DQ6/DQ7 allows host CPU to perform other tasks during erase/program operations

Applications

Industrial PLC Firmware Storage Network Router Boot Code

Use Scenario: Storing firmware images and configuration parameters in programmable logic controllers operating in harsh environments (-40°C to +85°C).

IC Role / Device Role / Timing Role: Nonvolatile boot memory holding bootloader and application code executed directly by ARM Cortex-M or Renesas RX microcontrollers.

Use Value: 100-year data retention and 100,000-cycle endurance ensure reliable operation over 15+ year equipment lifetimes without field replacement.

Use Scenario: Hosting boot loader and fail-safe recovery image in enterprise-grade Ethernet switches and routers.

IC Role / Device Role / Timing Role: Parallel x8 interface provides deterministic 55 ns read latency for fast boot initialization and secure firmware validation.

Use Value: Sector-erase capability enables atomic firmware updates - new image written to spare sector while old remains active until verified.

Legacy PC BIOS/UEFI Storage Medical Device Calibration Data

Use Scenario: Replacing older EPROMs in legacy motherboard designs where space-constrained PLCC-32 footprint is retained.

IC Role / Device Role / Timing Role: Drop-in JEDEC-compliant flash memory interfacing with ISA/LPC bus controllers for BIOS code execution.

Use Value: Single 3.3V supply simplifies power design versus 5V-only predecessors; RoHS compliance meets modern environmental requirements.

Use Scenario: Storing factory-calibrated sensor offsets and linearization coefficients in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Low-power standby current (1 µA) preserves battery life in handheld devices during extended idle periods.

Use Value: Guaranteed data integrity over 100 years ensures calibration validity across entire product service life without recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
AM29LV040B-55REI 55 ns access, 4-Mbit, 3.0V–3.6V, but uses AMD/Fujitsu command set and lacks SuperFlash® fixed timing Requires modified driver software due to different erase command sequence and status polling behavior Choose if existing AMD-compatible firmware stack is in place and SuperFlash® timing predictability is not critical
SST39VF040-70-4C-NHE-T Same density and pinout, but 2.7V–3.6V supply range and 70 ns access time; lower voltage tolerance enables wider input rail flexibility Better suited for battery-powered or low-voltage industrial systems where 3.0V minimum cannot be guaranteed Choose when system VDD may dip below 3.0V or when 70 ns latency is acceptable for cost or sourcing reasons

Compared with AM29LV040B-55REI and SST39VF040-70-4C-NHE-T, the SST39LF040-55-4C-NHE-T delivers superior timing consistency across endurance life and tighter 55 ns read performance, making it optimal for deterministic boot and real-time firmware execution.

Availability

SST39LF040-55-4C-NHE-T is available at Aetrix Electronics and suitable for industrial control systems, network infrastructure equipment, and legacy computing platforms requiring stable component supply and long-term obsolescence management.

Supply support for SST39LF040-55-4C-NHE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller, analog, FPGA, and memory solutions, with a focus on embedded control and connectivity.

The SST39LF series was designed specifically for cost-sensitive, high-reliability embedded applications requiring field-upgradable nonvolatile storage with predictable timing and robust data integrity.

FAQ

What is the exact memory organization of the SST39LF040-55-4C-NHE-T?

The SST39LF040-55-4C-NHE-T is organized as 512K × 8, delivering 4 Mbit (512 KB) of byte-addressable flash memory. Its address space spans A0–A17 for byte selection, with A18 (AMS) used exclusively during sector or block erase operations to identify target sectors within the 128 uniform 4-Kbyte sectors.

Does the SST39LF040-55-4C-NHE-T support both CE#- and WE#-controlled write operations?

Yes, the SST39LF040-55-4C-NHE-T supports both CE#- and WE#-controlled programming and erase cycles. The timing diagrams in DS20005023E (Figures 7-2 and 7-3 for program; 7-6 and 7-7 for erase) confirm interchangeability of CE# and WE# as long as minimum pulse width and setup/hold timing requirements are met per Table 7-2.

How does the SST39LF040-55-4C-NHE-T handle power-up sequencing?

The SST39LF040-55-4C-NHE-T requires ≥100 µs from VDD reaching 3.0V before first read (TPU-READ) or write (TPU-WRITE) operation. Its built-in VDD power-up/down detection inhibits writes when VDD < 1.5V, preventing corruption during brown-out conditions - a key reliability feature confirmed in Section 3.9 of the datasheet.

What is the sector erase time specification for the SST39LF040-55-4C-NHE-T?

The SST39LF040-55-4C-NHE-T has a typical sector erase time of 18 ms and a maximum of 25 ms (TSE, Table 7-2). This applies uniformly across all 128 sectors, and the device uses either Data# Polling (DQ7) or Toggle Bit (DQ6) to signal completion - eliminating need for fixed software delays.

Is the SST39LF040-55-4C-NHE-T RoHS compliant and what package does it use?

Yes, the SST39LF040-55-4C-NHE-T is RoHS compliant per datasheet Section 1. All devices are manufactured and tested to meet JEDEC Level 3 moisture sensitivity, and it uses a 32-lead PLCC package with standard lead finish - verified in Section 8.1 and Feature list on page 1 of DS20005023E.

SST39LF040-55-4C-NHE-T Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
SST39 MPF™
Package/Case:
32-LCC (J-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20µs
Access Time:
55 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-PLCC (11.43x13.97)

SST39LF040-55-4C-NHE-T FAQ

1.How can I place an order for SST39LF040-55-4C-NHE-T through Aetrix?

Please submit a Request for Quotation (RFQ) for SST39LF040-55-4C-NHE-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SST39LF040-55-4C-NHE-T reliable?

The price and inventory of SST39LF040-55-4C-NHE-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39LF040-55-4C-NHE-T is usually 5 days.

3.What payment methods are accepted for SST39LF040-55-4C-NHE-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39LF040-55-4C-NHE-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SST39LF040-55-4C-NHE-T?

SST39LF040-55-4C-NHE-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SST39LF040-55-4C-NHE-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SST39LF040-55-4C-NHE-T?

For technical support, including SST39LF040-55-4C-NHE-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39LF040-55-4C-NHE-T requirements.

6.How does Aetrix verify that SST39LF040-55-4C-NHE-T is sourced from the original manufacturer or authorized distributors?

All SST39LF040-55-4C-NHE-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39LF040-55-4C-NHE-T meets industry standards.

7.What is the process for return or replacement of SST39LF040-55-4C-NHE-T?

All SST39LF040-55-4C-NHE-T units undergo pre-shipment inspection (PSI). If there is an issue with SST39LF040-55-4C-NHE-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SST39LF040-55-4C-NHE-T part is unused and in its original packaging.

Return procedure for SST39LF040-55-4C-NHE-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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