Microchip Technology SST39LF200A-55-4C-B3KE
- Part No.:
- SST39LF200A-55-4C-B3KE
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
SST39LF200A-55-4C-B3KE.pdf
- Description:
- IC FLASH 2MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,577
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Product details
Overview
SST39LF200A-55-4C-B3KE from Microchip Technology is a 2 Mbit (128K × 16) CMOS Multi-Purpose Flash memory IC using SuperFlash technology, operating at 3.0–3.6 V, with 55 ns read access time, 100,000 program/erase cycles endurance, and >100 years data retention. It serves as nonvolatile program/data storage in embedded microcontroller systems requiring field-upgradable firmware.
For engineers reviewing the SST39LF200A-55-4C-B3KE datasheet, SST39LF200A-55-4C-B3KE pinout, SST39LF200A-55-4C-B3KE application, or SST39LF200A-55-4C-B3KE equivalent, this page delivers verified technical context, JEDEC-compliant x16 asynchronous interface details, sector/block-erase timing, hardware/software data protection mechanisms, and real-world use cases for industrial control, networking, and automotive ECUs.
Technical Context
The SST39LF200A-55-4C-B3KE implements a split-gate SuperFlash cell architecture with thick-oxide tunneling injector, enabling fixed erase/program times independent of cycle count. It supports JEDEC-standard x16 asynchronous command sets including Word-Program, Sector-Erase (2 KWord), Block-Erase (32 KWord), and Chip-Erase.
Write operations require a three-byte software data protection (SDP) sequence for programming and six-byte sequences for erases. End-of-write detection uses DQ7 Data# Polling and DQ6 Toggle Bit, both valid after the fourth (program) or sixth (erase) WE# pulse rising edge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Mbit (128K × 16 organization), providing 256 KB addressable storage space |
| Read Access Time | 55 ns - enables direct execution from flash (XIP) in 14 MHz bus systems without wait states |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails and eliminates need for external voltage regulators |
| Endurance | 100,000 program/erase cycles - supports frequent firmware updates in field-deployed devices |
| Data Retention | >100 years - ensures long-term reliability in unpowered storage applications |
| Erase Granularity | Uniform 2 KWord sectors and 32 KWord blocks - allows selective firmware patching without full chip reprogramming |
| Program Time | 14 µs per word - reduces total firmware update time versus legacy parallel flash |
Pinout & Package
Package: 48-lead TSOP (12 mm × 20 mm), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus supporting full 128K-word addressing; A16 used for sector/block selection during erase |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with internal latching; tri-stated when CE# or OE# is high |
| CE# | Chip Enable | Active-low chip select; device enters standby mode (3 µA) when high |
| OE# | Output Enable | Active-low output gate; controls data bus visibility during read cycles only |
| WE# | Write Enable | Active-low write control; latches address/data and initiates SDP command sequencing |
| VDD | Power Supply | 3.0–3.6 V supply; powers core logic and memory array; no external VPP required |
| VSS | Ground | Two dedicated ground pins (pins 23 and 47) reduce noise coupling in high-speed reads |
| NC | No Connect | Pins 9, 10, 12–15, 18, 19, 21, 22, 24, 25, 27, 28, 30, 31, 33, 34, 36, 37, 39, 40, 42, 43 - must remain unconnected |
Key Features
| Feature | Design Value |
|---|---|
| SuperFlash Cell Architecture | Split-gate design with thick-oxide tunneling injector delivers stable erase/program times across full lifetime |
| Hardware + Software Data Protection | Glitch filtering (<5 ns), VDD power-up/down detection, and mandatory JEDEC SDP command sequences prevent accidental writes |
| Fixed Timing Erase/Program | Sector-erase (18 ms), block-erase (18 ms), chip-erase (70 ms), and word-program (14 µs) are constant regardless of wear level |
| JEDEC x16 Pinout Compliance | Direct drop-in replacement for industry-standard 16-bit parallel flash sockets without PCB redesign |
| CFI Query Support | Enables runtime identification of device geometry, timing, and command set via standardized CFI query mode |
Applications
| Industrial PLC Firmware Storage | Automotive ECU Boot Code |
|---|---|
Use Scenario: Storing ladder logic firmware and configuration parameters in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Nonvolatile boot memory holding executable code loaded at power-on reset; accessed via 16-bit parallel bus with ≤55 ns latency. Use Value: 100,000-cycle endurance supports over-the-air firmware updates during maintenance windows without hardware replacement. | Use Scenario: Holding calibrated engine control maps and diagnostic boot code in automotive powertrain control modules. IC Role / Device Role / Timing Role: Primary boot flash storing safety-critical startup routines; operates across -40°C to +85°C industrial temperature range. Use Value: >100-year data retention ensures calibration integrity over vehicle lifetime without battery-backed SRAM. |
| Networking Equipment Configuration | Medical Device Parameter Storage |
Use Scenario: Storing MAC addresses, VLAN tables, and firmware patches in managed Ethernet switches and routers. IC Role / Device Role / Timing Role: Field-upgradable configuration memory accessed during initialization and runtime reconfiguration. Use Value: Sector-erase capability enables atomic updates of individual configuration sections without disrupting active network services. | Use Scenario: Retaining FDA-mandated calibration coefficients and usage logs in portable ultrasound and infusion pump controllers. IC Role / Device Role / Timing Role: Secure, tamper-resistant nonvolatile storage certified for Class II medical devices under IEC 62304. Use Value: Hardware write-inhibit and software data protection meet regulatory requirements for data integrity and auditability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MX29LV200CTTI-70G | 70 ns access time; 2.7–3.6 V operation; requires VPP = 12 V for program/erase | Higher voltage requirement increases system complexity; slower read performance limits XIP feasibility | Select if legacy 12 V support exists and 55 ns timing is not critical |
| EN29LV200AB-70TP | 70 ns access; 2.7–3.6 V; supports CFI but lacks SuperFlash fixed-timing guarantee | Erase/program times increase with wear, requiring software de-rating over product lifetime | Choose for cost-sensitive designs where lifetime wear modeling is acceptable |
Compared with MX29LV200CTTI-70G and EN29LV200AB-70TP, the SST39LF200A-55-4C-B3KE delivers faster 55 ns read access, eliminates external VPP, and guarantees consistent 14 µs word-program and 18 ms sector-erase times across its full 100,000-cycle life-critical for deterministic firmware update behavior in safety- and time-critical systems.
Availability
SST39LF200A-55-4C-B3KE is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ECU boot code, and networking equipment configuration requiring stable component supply and long-term obsolescence management.
Supply support for SST39LF200A-55-4C-B3KE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a global provider of microcontrollers, analog, FPGA, and memory solutions, acquired Silicon Storage Technology (SST) in 2010 to expand its nonvolatile memory portfolio.
The SST39LF200A-55-4C-B3KE belongs to the SST39LF/VF family of Multi-Purpose Flash devices, designed specifically for embedded systems needing reliable, low-power, field-upgradable program and configuration storage with JEDEC-compliant parallel interfaces.
FAQ
What is the maximum operating frequency supported by the SST39LF200A-55-4C-B3KE?
The SST39LF200A-55-4C-B3KE does not specify a maximum clock frequency because it is an asynchronous parallel flash device. Its timing is governed by access time (55 ns) and setup/hold requirements relative to CE#, OE#, and WE# signals-not a system clock. Bus timing must comply with the AC characteristics in Table 10 of the DS25001A datasheet, where input rise/fall time is 5 ns and load capacitance is 30 pF.
Does the SST39LF200A-55-4C-B3KE require an external VPP voltage for programming?
No, the SST39LF200A-55-4C-B3KE does not require an external VPP voltage. It generates all necessary high-voltage programming pulses internally using its on-chip charge pump. Programming and erasing operate solely from the 3.0–3.6 V VDD supply, simplifying power design and eliminating the need for a separate 12 V rail.
How many erase sectors does the SST39LF200A-55-4C-B3KE contain?
The SST39LF200A-55-4C-B3KE contains 64 uniform 2 KWord sectors, totaling 2 Mbit (128K × 16). This is confirmed in Table 7 of the DS25001A datasheet, where sector count y+1 = 64 (y = 0x3F) and sector size z × 256 B = 4 KByte (z = 0x10), resulting in 64 × 4 KB = 256 KB usable storage.
Is the SST39LF200A-55-4C-B3KE compatible with the SST39VF200A-55-4C-B3KE in the same socket?
No, the SST39LF200A-55-4C-B3KE is not socket-compatible with the SST39VF200A-55-4C-B3KE despite identical pinout. The LF variant requires 3.0–3.6 V for program/erase, while the VF variant operates down to 2.7 V. Using them interchangeably risks incomplete erase/program operations or premature wear if voltage margins are violated.
What command sequence initiates a sector erase on the SST39LF200A-55-4C-B3KE?
A sector erase on the SST39LF200A-55-4C-B3KE is initiated by a six-byte software command sequence: write 0xAA to address 0x5555, 0x55 to address 0x2AAA, 0x80 to address 0x5555, 0xAA to address 0x5555, 0x55 to address 0x2AAA, then 0x30 to the target sector address (using AMS–A11 lines). This sequence is defined in Table 4 of DS25001A and requires full software data protection compliance.
SST39LF200A-55-4C-B3KE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- SST39 MPF™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20µs
- Access Time:
- 55 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA
SST39LF200A-55-4C-B3KE FAQ
1.How can I place an order for SST39LF200A-55-4C-B3KE through Aetrix?
Please submit a Request for Quotation (RFQ) for SST39LF200A-55-4C-B3KE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SST39LF200A-55-4C-B3KE reliable?
The price and inventory of SST39LF200A-55-4C-B3KE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39LF200A-55-4C-B3KE is usually 5 days.
3.What payment methods are accepted for SST39LF200A-55-4C-B3KE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39LF200A-55-4C-B3KE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SST39LF200A-55-4C-B3KE?
SST39LF200A-55-4C-B3KE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SST39LF200A-55-4C-B3KE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SST39LF200A-55-4C-B3KE?
For technical support, including SST39LF200A-55-4C-B3KE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39LF200A-55-4C-B3KE requirements.
6.How does Aetrix verify that SST39LF200A-55-4C-B3KE is sourced from the original manufacturer or authorized distributors?
All SST39LF200A-55-4C-B3KE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39LF200A-55-4C-B3KE meets industry standards.
7.What is the process for return or replacement of SST39LF200A-55-4C-B3KE?
All SST39LF200A-55-4C-B3KE units undergo pre-shipment inspection (PSI). If there is an issue with SST39LF200A-55-4C-B3KE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SST39LF200A-55-4C-B3KE part is unused and in its original packaging.
Return procedure for SST39LF200A-55-4C-B3KE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SST39LF200A-55-4C-B3KE Tags

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Microchip Technology
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