My Inquiry
My Account
Microchip Technology SST39SF010A-55-4C-NHE
- Part No.:
- SST39SF010A-55-4C-NHE
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 32-LCC (J-Lead)
- Datasheet:
-
SST39SF010A-55-4C-NHE.pdf
- Description:
- IC FLASH 1MBIT PARALLEL 32PLCC
- Quantity:
- Payment:
- Shipping:
Inventory:151
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SST39SF010A-55-4C-NHE from Microchip Technology is a 1-Mbit (128K × 8) CMOS Multi-Purpose Flash memory IC with 55 ns read access time, single 4.5V–5.5V supply operation, and uniform 4-Kbyte sector erase architecture. It implements SuperFlash® split-gate technology for high reliability in embedded firmware storage applications requiring field-upgradable code or configuration data.
For engineers reviewing the SST39SF010A-55-4C-NHE datasheet, SST39SF010A-55-4C-NHE pinout, SST39SF010A-55-4C-NHE application, or SST39SF010A-55-4C-NHE equivalent, this page delivers verified technical context, JEDEC-compliant timing behavior, sector-level erase control, hardware/software write protection, and real-world design implications for legacy 8-bit microcontroller systems.
Technical Context
This device operates as a x8 parallel-interface NOR Flash memory with TTL-compatible I/Os, supporting byte-program, sector-erase, and chip-erase commands via JEDEC-standard software data protection sequences. Its SuperFlash® cell architecture enables fixed 14 µs typical byte program time and 18 ms typical sector erase time-both independent of accumulated erase/program cycles.
The SST39SF010A-55-4C-NHE uses address latching on CE# or WE# falling edge and data latching on rising edge, with end-of-write detection via Toggle Bit (DQ6) or Data# Polling (DQ7). It features dual standby modes (3 mA TTL-input and 100 µA CMOS-input), noise/glitch immunity (<5 ns pulse rejection), and VDD power-up/down write inhibition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (128K × 8), directly maps to 128 KB of firmware or configuration space in 8-bit bus systems. |
| Read Access Time | 55 ns maximum - enables direct execution from flash (XIP) in 14 MHz microcontrollers without wait states. |
| Byte Program Time | 14 µs typical - supports rapid in-system updates of small code patches or calibration tables. |
| Sector Erase Time | 18 ms typical - allows selective reprogramming of 4-Kbyte functional blocks without full chip reset. |
| Data Retention | Greater than 100 years - ensures long-term validity of stored boot code or security keys in unpowered devices. |
| Endurance | 10,000 program/erase cycles minimum per sector - qualified per JEDEC A117 for industrial lifecycle requirements. |
| Supply Voltage | 4.5V–5.5V - compatible with legacy 5V logic families and eliminates need for external voltage regulators. |
| Operating Temperature | 0°C to +70°C (Commercial grade) - validated for use in office equipment, industrial HMIs, and consumer electronics. |
Pinout & Package
32-lead TSOP (Thin Small Outline Package) with standard x8 parallel interface; pin-compatible with industry-standard 32-pin Flash memories. Pin 1 is NC (no connection); pin 30 is NC for SST39SF010A (confirmed per DS20005022F, Figure 2-1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus supporting full 128K-byte addressing; AMS = A16 (most significant address) is unused/NC for SST39SF010A. |
| DQ0–DQ7 | Data Input/Output | 8-bit bidirectional data bus; outputs tri-state when CE# or OE# is high; supports latched writes and read verification. |
| CE# | Chip Enable | Active-low chip select; device enters standby (30 µA) when high; required low for all operations except write inhibit. |
| OE# | Output Enable | Active-low output gate; controls data bus drive during reads; must be low with CE# low for valid output. |
| WE# | Write Enable | Active-low write control; initiates command latching and internal program/erase cycles; used with CE# for timing-critical sequences. |
| VDD | Power Supply | 4.5V–5.5V supply input; powers core logic and memory array; internal VPP generation eliminates need for external high-voltage source. |
| VSS | Ground | Reference ground for all signals and internal circuitry; requires low-impedance PCB connection for stable erase/write margins. |
| NC (Pin 1, Pin 30) | No Connection | Unbonded pins; must remain unconnected on PCB to prevent signal coupling or ESD path anomalies. |
Key Features
| Feature | Design Value |
|---|---|
| SuperFlash® Technology | Split-gate cell with thick oxide tunneling injector enables 100-year data retention and cycle-independent erase/program times. |
| Uniform 4-Kbyte Sectors | 128 independently erasable sectors allow granular firmware updates without disturbing adjacent functional modules. |
| JEDEC-Compliant Command Set | Standardized 3-byte (program) and 6-byte (erase) software sequences ensure interoperability with existing Flash programming tools. |
| Hardware Write Protection | Glitch immunity (<5 ns), VDD power-up/down detection, and CE#/OE#/WE# state monitoring prevent accidental writes during power transitions. |
| End-of-Write Detection | Toggle Bit (DQ6) and Data# Polling (DQ7) provide deterministic, non-blocking status feedback for real-time system scheduling. |
| TTL I/O Compatibility | Direct interface with 5V microcontrollers (e.g., 8051, PIC18) without level-shifting; VIH = 2.0V min, VOH = 2.4V min at 400 µA. |
Applications
| Industrial Control Firmware Storage | Legacy PC BIOS/UEFI Module |
|---|---|
|
Use Scenario: Storing PLC ladder logic firmware updated via RS-232 service port. IC Role / Device Role / Timing Role: Nonvolatile code storage with sector-erase capability enabling partial firmware patching without full reflash. Use Value: Reduces field maintenance downtime by allowing targeted updates to I/O driver modules while preserving communication stack integrity. |
Use Scenario: Boot ROM in embedded x86 platforms where BIOS initialization code must survive power loss. IC Role / Device Role / Timing Role: Primary firmware image storage with 55 ns read access enabling fast POST execution. Use Value: Eliminates need for shadow RAM copy, reducing BOM cost and boot latency in cost-sensitive industrial PCs. |
| Consumer Appliance Configuration Memory | Medical Device Calibration Storage |
|
Use Scenario: Saving user preferences and operational history in washing machines with EEPROM wear-out concerns. IC Role / Device Role / Timing Role: High-endurance alternative to EEPROM for infrequently modified but critical settings data. Use Value: Extends product lifetime beyond 10,000 wash cycles by avoiding EEPROM write-cycle exhaustion in temperature-variable environments. |
Use Scenario: Storing sensor calibration coefficients and safety-critical fault logs in portable ultrasound units. IC Role / Device Role / Timing Role: Tamper-resistant, long-retention storage for FDA-mandated traceability records. Use Value: Meets IEC 62304 Class C software requirements via 100-year data retention and hardware/software write lock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AM29LV010B-55EI | 55 ns access, 1-Mbit (128K × 8), but requires 3.0V–3.6V supply and lacks SuperFlash® endurance (100K cycles vs. 10K min for SST39SF010A). | Designed for 3.3V systems; incompatible with 5V-only designs without level translation. | Select only if migrating to lower-voltage platform; verify VDD compatibility and rewrite protection scheme. |
| MX29LV160CBTI-55G | 55 ns access, 16-Mbit (2M × 8), supports CFI query mode and wider voltage range (2.7V–3.6V); no 5V operation. | Targeted at modern 32-bit controllers with CFI-based auto-detection; not pin-compatible with SST39SF010A. | Use for capacity upgrades in new designs; not suitable as drop-in replacement due to voltage and pinout mismatch. |
Compared with AM29LV010B-55EI and MX29LV160CBTI-55G, the SST39SF010A-55-4C-NHE uniquely supports 5V-only operation with hardware write inhibit during power transitions, making it irreplaceable in legacy industrial controllers where voltage rail stability cannot be guaranteed.
Availability
SST39SF010A-55-4C-NHE is available at Aetrix Electronics and suitable for industrial control firmware storage, legacy PC BIOS modules, consumer appliance configuration memory, and medical device calibration storage requiring stable component supply across extended production lifecycles.
Supply support for SST39SF010A-55-4C-NHE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a global semiconductor company specializing in microcontrollers, analog components, and memory solutions, with emphasis on reliability, longevity, and industrial-grade qualification.
The SST39SF010A-55-4C-NHE belongs to Microchip's SST39SFx family of Multi-Purpose Flash devices, designed specifically for cost-sensitive, 5V-based embedded systems needing field-upgradable firmware with robust data retention and sector-level flexibility.
FAQ
What is the maximum operating frequency supported by SST39SF010A-55-4C-NHE?
The SST39SF010A-55-4C-NHE does not specify a maximum clock frequency because it is an asynchronous parallel Flash memory. Its timing is governed by access times: 55 ns read cycle time (TRC) and 40 ns minimum WE#/CE# pulse width. System bus speed is constrained by these parameters-not by an internal clock-so it interfaces reliably with 8-bit microcontrollers running up to ~14 MHz without wait states. The SST39SF010A-55-4C-NHE datasheet confirms this in Table 7-1 and Figure 7-1.
Does SST39SF010A-55-4C-NHE support both CE#-controlled and WE#-controlled write operations?
Yes, the SST39SF010A-55-4C-NHE supports both CE#- and WE#-controlled programming and erase cycles, as confirmed in Figures 7-2 and 7-3 of the datasheet. Either signal can serve as the primary strobe for command latching, provided minimum timing requirements (e.g., TWP ≥ 40 ns, TCP ≥ 40 ns) are met. This dual-control flexibility simplifies integration into diverse 8-bit bus architectures where CE# or WE# may be more readily available for timing-critical sequences.
How is hardware write protection implemented in SST39SF010A-55-4C-NHE?
The SST39SF010A-55-4C-NHE implements three hardware write protection mechanisms: (1) noise/glitch immunity rejecting WE# or CE# pulses shorter than 5 ns; (2) VDD power-up/down detection inhibiting writes when supply falls below 2.5V; and (3) write inhibit mode triggered by OE# low, CE# high, or WE# high. These features are documented in Section 3.9 of DS20005022F and ensure robustness during power sequencing-critical for preventing corruption in SST39SF010A-55-4C-NHE-based boot memory systems.
What is the sector size and total number of sectors in SST39SF010A-55-4C-NHE?
The SST39SF010A-55-4C-NHE has uniform 4-Kbyte sectors, resulting in 32 total sectors (128K bytes ÷ 4K bytes/sector). This architecture is explicitly stated in Section 2.0 ("Sector Erase Capability") and Figure 2-1 (pin assignments), where sector selection uses address lines A12–A0. Each sector can be erased independently, enabling modular firmware updates without affecting other code or data regions stored in the SST39SF010A-55-4C-NHE.
Can SST39SF010A-55-4C-NHE be used in place of SST39SF020A or SST39SF040 in a design?
No-SST39SF010A-55-4C-NHE is not functionally interchangeable with SST39SF020A or SST39SF040 due to fundamental address bus differences: SST39SF010A uses A0–A15 (16-bit) with A16 as NC, while SST39SF020A requires A17 and SST39SF040 requires A18. Pin 1 and pin 30 are NC on SST39SF010A but assigned to A18 and A17 respectively on larger variants. Substituting them would cause address decoding errors and undefined behavior in the SST39SF010A-55-4C-NHE system.
SST39SF010A-55-4C-NHE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- SST39 MPF™
- Package/Case:
- 32-LCC (J-Lead)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20µs
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-PLCC (11.43x13.97)
SST39SF010A-55-4C-NHE FAQ
1.How can I place an order for SST39SF010A-55-4C-NHE through Aetrix?
Please submit a Request for Quotation (RFQ) for SST39SF010A-55-4C-NHE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SST39SF010A-55-4C-NHE reliable?
The price and inventory of SST39SF010A-55-4C-NHE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39SF010A-55-4C-NHE is usually 5 days.
3.What payment methods are accepted for SST39SF010A-55-4C-NHE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39SF010A-55-4C-NHE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SST39SF010A-55-4C-NHE?
SST39SF010A-55-4C-NHE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SST39SF010A-55-4C-NHE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SST39SF010A-55-4C-NHE?
For technical support, including SST39SF010A-55-4C-NHE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39SF010A-55-4C-NHE requirements.
6.How does Aetrix verify that SST39SF010A-55-4C-NHE is sourced from the original manufacturer or authorized distributors?
All SST39SF010A-55-4C-NHE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39SF010A-55-4C-NHE meets industry standards.
7.What is the process for return or replacement of SST39SF010A-55-4C-NHE?
All SST39SF010A-55-4C-NHE units undergo pre-shipment inspection (PSI). If there is an issue with SST39SF010A-55-4C-NHE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SST39SF010A-55-4C-NHE part is unused and in its original packaging.
Return procedure for SST39SF010A-55-4C-NHE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SST39SF010A-55-4C-NHE Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
