Microchip Technology SST39VF010-70-4I-NHE-T

Overview

SST39VF010-70-4I-NHE-T from Microchip Technology is a 1-Mbit (128K × 8) CMOS Multi-Purpose Flash memory IC with 2.7V–3.6V single-supply write operation, 70 ns read access time, and uniform 4-Kbyte sector erase architecture. It delivers 100,000 program/erase cycles and >100 years data retention for embedded firmware storage in industrial control modules.

For engineers reviewing the SST39VF010-70-4I-NHE-T datasheet, SST39VF010-70-4I-NHE-T pinout, SST39VF010-70-4I-NHE-T application, or SST39VF010-70-4I-NHE-T equivalent, this page provides verified electrical specs, JEDEC-compliant x8 interface timing, SuperFlash® reliability metrics, and industrial-grade (-40°C to +85°C) operating support - all confirmed against DS20005023E.

Technical Context

The SST39VF010-70-4I-NHE-T implements Microchip's proprietary SuperFlash® split-gate cell technology, enabling fixed erase/program times independent of cycle count. Its command-set architecture uses standard JEDEC x8 pinouts and requires six-byte software data protection sequences for sector or chip erase.

It supports both CE#- and WE#-controlled operations with latched address/data buses, Toggle Bit (DQ6) and Data# Polling (DQ7) for end-of-write detection, and hardware safeguards including VDD power-up/down detection and noise/glitch immunity on control pins.

Key Specifications

Pinout & Package

32-lead PLCC (Plastic Leaded Chip Carrier) package with JEDEC-standard x8 memory pinout. Pin 1 is NC; pins 6 and 30 are NC for SST39VF010 variant. Compatible with standard PLCC-32 sockets and reflow profiles up to +260°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Compared with MX29LV160CBTI-70G and EN29LV010T-70IP, the SST39VF010-70-4I-NHE-T uniquely combines 2.7V write capability, industrial temperature rating, and proven SuperFlash® reliability - making it optimal for field-upgradable embedded systems requiring long-term data integrity under voltage and thermal stress.

Availability

SST39VF010-70-4I-NHE-T is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device configuration memory, telecom bootloader hosting, and automotive body control module applications requiring stable component supply across extended product lifecycles.

Supply support for SST39VF010-70-4I-NHE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller, analog, FPGA, and memory solutions, serving industrial, automotive, and communications markets with vertically integrated silicon and tools.

The SST39VF series belongs to Microchip's Multi-Purpose Flash (MPF) product line, engineered specifically for reliable, low-voltage firmware and configuration storage in resource-constrained embedded systems.

FAQ

What is the guaranteed minimum endurance rating for SST39VF010-70-4I-NHE-T?

The SST39VF010-70-4I-NHE-T is rated for a minimum of 10,000 program/erase cycles per JEDEC Standard A117, with typical performance exceeding 100,000 cycles. This endurance applies to the full memory array and is validated across the industrial temperature range (-40°C to +85°C). The SST39VF010-70-4I-NHE-T achieves this using SuperFlash® split-gate technology, which maintains consistent erase/program times regardless of accumulated cycles.

Does SST39VF010-70-4I-NHE-T support both CE#- and WE#-controlled write operations?

Yes, the SST39VF010-70-4I-NHE-T fully supports interchangeable CE#- and WE#-controlled programming and erase operations, provided minimum timing requirements (e.g., TWP ≥ 40 ns, TCP ≥ 40 ns) are met. This dual-control flexibility allows integration with diverse microcontroller bus architectures - the SST39VF010-70-4I-NHE-T responds identically whether CE# or WE# initiates the command sequence.

What is the exact memory organization and addressing scheme of SST39VF010-70-4I-NHE-T?

The SST39VF010-70-4I-NHE-T is organized as 128K × 8 (1,048,576 bits), requiring 17 address lines (A0–A16). AMS = A16 serves as the most significant address bit and selects the target 4-Kbyte sector during erase operations. The device uses standard JEDEC x8 pinout and accepts byte-addressed commands via the 5555H/2AAAH unlock sequence before any program or erase action.

How does SST39VF010-70-4I-NHE-T indicate completion of a Byte Program operation?

The SST39VF010-70-4I-NHE-T signals Byte Program completion using two hardware-supported methods: Data# Polling (DQ7 toggles complement-to-data until complete, then returns true value) and Toggle Bit (DQ6 alternates logic states during operation and freezes upon completion). Both are valid after the rising edge of the fourth WE# or CE# pulse, and the SST39VF010-70-4I-NHE-T requires no external polling delay beyond these status bits.

Is SST39VF010-70-4I-NHE-T RoHS compliant and what is its moisture sensitivity level?

Yes, the SST39VF010-70-4I-NHE-T is RoHS compliant per Microchip's DS20005023E documentation. Its 32-lead PLCC package conforms to IPC/JEDEC J-STD-020D moisture sensitivity Level 3, requiring floor life management and bake conditioning prior to reflow if exposed beyond 168 hours at ≤30°C/60% RH. The SST39VF010-70-4I-NHE-T is qualified for standard Pb-free reflow up to +260°C for 10 seconds.