My Inquiry
My Account
Microchip Technology SST39VF040-70-4C-WHE-T
- Part No.:
- SST39VF040-70-4C-WHE-T
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 32-TFSOP (0.488", 12.40mm Width)
- Datasheet:
-
SST39VF040-70-4C-WHE-T.pdf
- Description:
- IC FLASH 4MBIT PARALLEL 32TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,185
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SST39VF040-70-4C-WHE-T from Microchip Technology (formerly Silicon Storage Technology) is a 4 Mbit (512K × 8) CMOS Multi-Purpose Flash memory IC with JEDEC-standard x8 parallel interface, 70 ns read access time, 2.7–3.6 V single-supply operation, and uniform 4 KB sector-erase architecture. It serves as nonvolatile program/data storage in embedded microcontroller systems requiring field-upgradable firmware.
For engineers reviewing the SST39VF040-70-4C-WHE-T datasheet, SST39VF040-70-4C-WHE-T pinout, SST39VF040-70-4C-WHE-T application, or SST39VF040-70-4C-WHE-T equivalent, key selection criteria include its industrial temperature range (−40°C to +85°C), SuperFlash® technology endurance (100,000 program/erase cycles), 100-year data retention, and compatibility with standard 32-pin PLCC or TSOP packages.
Technical Context
This device implements SST's proprietary SuperFlash® split-gate cell architecture with thick-oxide tunneling injector, enabling fixed erase/program timing independent of cycle count. It supports byte-program, sector-erase (4 KB), and chip-erase operations via JEDEC-compliant command sequences using CE#, OE#, and WE# control lines.
Write status detection uses dual software methods: Data# Polling (DQ7) and Toggle Bit (DQ6), both valid after the fourth (program) or sixth (erase) WE#/CE# pulse. Hardware protection includes noise/glitch immunity (<5 ns pulses ignored), VDD power-up/down detection (<1.5 V inhibits writes), and write-inhibit mode via OE# low, CE# high, or WE# high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8), providing sufficient space for boot code, configuration tables, and firmware updates in resource-constrained MCUs. |
| Read Access Time | 70 ns - enables direct execution from flash (XIP) in systems with ≤14 MHz bus clocks without wait states. |
| Supply Voltage | 2.7–3.6 V - supports wide-input LDOs and battery-backed operation in portable and industrial equipment. |
| Endurance | 100,000 program/erase cycles - ensures reliable field firmware updates over product lifetime without wear leveling. |
| Data Retention | >100 years at 25°C - guarantees long-term data integrity in unpowered storage applications like calibration constants. |
| Operating Temperature | −40°C to +85°C - qualified for industrial environments including motor drives, PLCs, and outdoor telemetry units. |
| Package Type | 32-lead TSOP (8 mm × 14 mm) - surface-mount compatible with automated PCB assembly and space-constrained designs. |
Pinout & Package
32-lead TSOP (8 mm × 14 mm) package per JEDEC MO-142AC, RoHS compliant, with standard x8 parallel interface pinout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | A0–A18 provide full 19-bit addressing for 512K × 8 organization; A12–A18 select 4 KB sectors during erase. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; outputs tri-stated when CE# or OE# is high; latched internally during write cycles. |
| CE# | Chip Enable | Active-low chip select; device enters standby (1 µA) when high; required low for all read/write operations. |
| OE# | Output Enable | Active-low output gate; controls data bus drive; must be low for valid read data, high for high-impedance state. |
| WE# | Write Enable | Active-low write strobe; initiates byte-program, sector-erase, and chip-erase command sequences with CE#. |
| VDD | Power Supply | 2.7–3.6 V supply; internal charge pump generates programming voltage - no external VPP required. |
| VSS | Ground | Reference ground for all signals and power; requires low-impedance connection to minimize noise during erase/write. |
| NC | No Connection | Pins marked NC (e.g., A16/A17 in some variants) are unconnected - must remain floating or tied to ground per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| SuperFlash® Technology | Split-gate cell with thick-oxide tunneling injector delivers fixed 18 ms sector-erase and 14 µs byte-program times across full lifecycle - eliminates software de-rating. |
| Uniform Sector Architecture | 128 × 4 KB sectors enable granular firmware partitioning (e.g., bootloader, app, config) without erasing entire device. |
| Hardware + Software Data Protection | Glitch immunity, VDD monitoring, and mandatory 3-byte (program) / 6-byte (erase) JEDEC command sequences prevent accidental writes during power transitions. |
| End-of-Write Detection | DQ6 Toggle Bit and DQ7 Data# Polling allow host CPU to poll status without dedicated interrupt lines - reduces system pin count and firmware complexity. |
| CMOS I/O Compatibility | Full TTL/CMOS logic level compatibility (VIH = 0.7VDD, VOL = 0.2 V) ensures interoperability with legacy 5 V and modern 3.3 V microcontrollers. |
Applications
| Industrial PLC Firmware Storage | Medical Device Configuration Memory |
|---|---|
Use Scenario: Storing programmable logic controller ladder logic and I/O mapping tables that require field updates via HMI or USB interface. IC Role / Device Role / Timing Role: Nonvolatile parallel flash memory serving as primary firmware repository accessed directly by ARM Cortex-M4 MCU over 8-bit address/data bus. Use Value: 70 ns read access enables zero-wait-state XIP execution; 100,000-cycle endurance supports quarterly firmware patches over 10+ year product life. | Use Scenario: Holding calibrated sensor offsets, patient profile templates, and regulatory compliance logs in portable ultrasound and ECG devices. IC Role / Device Role / Timing Role: Secure configuration storage with hardware write-inhibit during power-up, ensuring calibration data integrity during battery swaps. Use Value: >100-year data retention meets FDA 21 CFR Part 11 archival requirements; −40°C to +85°C rating supports operation in sterilized environments. |
| Automotive Body Control Module | Networking Equipment Bootloader Storage |
Use Scenario: Storing lighting control algorithms, door lock logic, and CAN message routing tables in 12 V automotive body ECUs. IC Role / Device Role / Timing Role: Parallel flash memory interfaced to Infineon AURIX TC275 via external bus interface unit (EBU), operating under load-dump conditions. Use Value: 2.7–3.6 V supply range tolerates brown-out events; industrial temp grade survives under-hood thermal cycling without data corruption. | Use Scenario: Hosting U-Boot bootloader and FPGA bitstream in enterprise switches/routers requiring secure, fast boot from cold start. IC Role / Device Role / Timing Role: Primary boot memory mapped into ARM Cortex-A9 processor address space, accessed during power-on reset sequence. Use Value: 70 ns access time reduces boot latency by ~12% vs. 90 ns alternatives; sector-erase allows independent update of bootloader without affecting application partition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar parallel flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MX29LV400CBTI-70G | 4 Mbit (512K × 8), 70 ns, 3.0–3.6 V supply, 32-pin TSOP; lacks SuperFlash® fixed-timing guarantee - erase time increases with cycle count. | Requires runtime wear-leveling in high-update-rate applications; not rated for −40°C operation. | Select when cost sensitivity outweighs long-term timing predictability and extended temperature needs. |
| EN29LV400AB-70TP | 4 Mbit (512K × 8), 70 ns, 2.7–3.6 V, 32-pin TSOP; JEDEC-compatible but uses different command set - requires firmware adaptation. | Software ID and erase command sequences differ; validation effort needed for existing drivers. | Choose only if existing design already uses Eon flash and migration path is established. |
Compared with MX29LV400CBTI-70G and EN29LV400AB-70TP, SST39VF040-70-4C-WHE-T provides guaranteed fixed erase/program timing across its full 100,000-cycle lifespan and industrial temperature qualification - critical for deterministic real-time firmware updates in safety-critical systems.
Availability
SST39VF040-70-4C-WHE-T is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, automotive body electronics, and networking infrastructure requiring stable component supply and long-term obsolescence management.
Supply support for SST39VF040-70-4C-WHE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Silicon Storage Technology (SST) in 2016 and continues to manufacture and support the SuperFlash® family of parallel and serial NOR flash memories.
The SST39VF series was designed specifically for cost-sensitive, high-reliability embedded systems needing simple x8 parallel interface, low-voltage operation, and robust data retention - targeting applications where SPI flash bandwidth is insufficient and NAND complexity is unjustified.
FAQ
What is the maximum operating frequency supported by SST39VF040-70-4C-WHE-T?
The SST39VF040-70-4C-WHE-T does not specify a maximum clock frequency because it is an asynchronous parallel flash device. Its timing is governed by access parameters: 70 ns read cycle time (TRC), 70 ns chip enable access (TCE), and 30 ns output enable access (TOE). System bus speed is constrained by these parameters - for example, a 14 MHz bus (71 ns period) operates within specification with no wait states. The SST39VF040-70-4C-WHE-T datasheet confirms typical active current of 5 mA at 14 MHz.
Does SST39VF040-70-4C-WHE-T support both PLCC and TSOP packages?
Yes, the SST39VF040-70-4C-WHE-T is specified for 32-lead TSOP (8 mm × 14 mm) per the "WHE-T" suffix, but the underlying SST39VF040 die is also offered in 32-lead PLCC. The "WHE-T" designation explicitly indicates the TSOP variant; PLCC versions use different suffixes (e.g., "WHE"). Pin assignments and electrical characteristics are identical between packages per DS25023B Rev B.
How is write protection implemented on SST39VF040-70-4C-WHE-T?
SST39VF040-70-4C-WHE-T implements dual-layer write protection: hardware features include noise/glitch immunity (ignores WE#/CE# pulses <5 ns), VDD power-up/down detection (inhibits writes below 1.5 V), and write-inhibit mode (OE# low, CE# high, or WE# high). Software protection requires JEDEC-compliant 3-byte sequences for byte-program and 6-byte sequences for erase - shipped enabled by default.
What is the sector size and total number of sectors in SST39VF040-70-4C-WHE-T?
The SST39VF040-70-4C-WHE-T has uniform 4 KB sectors totaling 128 sectors (512 KB ÷ 4 KB = 128). This architecture allows selective erasure - for example, updating application firmware without disturbing bootloader or calibration data stored in separate sectors. Sector addresses are selected using AMS–A12 address lines per DS25023B Section 5.
Can SST39VF040-70-4C-WHE-T be used in place of SST39LF040-55-4C-WHE-T?
No - SST39VF040-70-4C-WHE-T and SST39LF040-55-4C-WHE-T are not interchangeable. They differ in supply voltage (2.7–3.6 V vs. 3.0–3.6 V), read access time (70 ns vs. 55 ns), and temperature grade (industrial −40°C to +85°C vs. commercial 0°C to +70°C). While pinout and command set are identical, the VF variant's lower voltage tolerance and slower timing preclude direct substitution without system-level validation.
SST39VF040-70-4C-WHE-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- SST39 MPF™
- Package/Case:
- 32-TFSOP (0.488", 12.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20µs
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP
SST39VF040-70-4C-WHE-T FAQ
1.How can I place an order for SST39VF040-70-4C-WHE-T through Aetrix?
Please submit a Request for Quotation (RFQ) for SST39VF040-70-4C-WHE-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SST39VF040-70-4C-WHE-T reliable?
The price and inventory of SST39VF040-70-4C-WHE-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39VF040-70-4C-WHE-T is usually 5 days.
3.What payment methods are accepted for SST39VF040-70-4C-WHE-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39VF040-70-4C-WHE-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SST39VF040-70-4C-WHE-T?
SST39VF040-70-4C-WHE-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SST39VF040-70-4C-WHE-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SST39VF040-70-4C-WHE-T?
For technical support, including SST39VF040-70-4C-WHE-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39VF040-70-4C-WHE-T requirements.
6.How does Aetrix verify that SST39VF040-70-4C-WHE-T is sourced from the original manufacturer or authorized distributors?
All SST39VF040-70-4C-WHE-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39VF040-70-4C-WHE-T meets industry standards.
7.What is the process for return or replacement of SST39VF040-70-4C-WHE-T?
All SST39VF040-70-4C-WHE-T units undergo pre-shipment inspection (PSI). If there is an issue with SST39VF040-70-4C-WHE-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SST39VF040-70-4C-WHE-T part is unused and in its original packaging.
Return procedure for SST39VF040-70-4C-WHE-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SST39VF040-70-4C-WHE-T Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
