Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology SST39VF512-70-4I-NHE-T

Part No.:
SST39VF512-70-4I-NHE-T
Manufacturer:
Microchip Technology
Category:
Memory
Package:
32-LCC (J-Lead)
Datasheet:
AetrixSST39VF512-70-4I-NHE-T.pdf
Description:
IC FLASH 512KBIT PARALLEL 32PLCC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,211

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SST39VF512-70-4I-NHE-T from Microchip Technology (formerly Silicon Storage Technology) is a 512 Kbit (64K × 8) CMOS Multi-Purpose Flash memory IC with JEDEC-standard x8 parallel interface, 70 ns read access time, 2.7–3.6 V single-supply operation, and uniform 4 KB sector-erase architecture. It serves as nonvolatile program/data storage in embedded microcontroller systems requiring field-upgradable firmware.

For engineers reviewing the SST39VF512-70-4I-NHE-T datasheet, SST39VF512-70-4I-NHE-T pinout, SST39VF512-70-4I-NHE-T application, or SST39VF512-70-4I-NHE-T equivalent, key selection criteria include its industrial temperature range (–40°C to +85°C), SuperFlash® technology endurance (10,000 write/erase cycles), 100-year data retention, and compatibility with standard 32-pin PLCC or TSOP packages.

Technical Context

This device implements SST's proprietary SuperFlash® split-gate cell architecture with thick-oxide tunneling injector, enabling fixed erase/program timing independent of cycle count. It supports byte-program, sector-erase (4 KB), and chip-erase operations via JEDEC-standard command sequences using CE#, OE#, and WE# control lines.

Read and write operations are fully CMOS I/O compatible, with tri-state outputs controlled by CE# and OE#. End-of-write detection is implemented via Data# Polling (DQ7) and Toggle Bit (DQ6), eliminating need for external timing delays during programming or erasing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density512 Kbit (64K × 8) - provides sufficient space for boot code, configuration tables, or firmware patches in resource-constrained MCU systems.
Read Access Time70 ns - enables direct execution from flash (XIP) at moderate clock speeds without wait states in 8-bit bus systems.
Supply Voltage2.7–3.6 V - supports wide-input LDOs and battery-backed operation in portable or industrial equipment.
Endurance10,000 write/erase cycles - validated per JEDEC A117, suitable for infrequent field updates over product lifetime.
Data Retention>100 years - ensures long-term reliability in unpowered storage applications such as calibration data or security keys.
Operating Temperature–40°C to +85°C - qualified for industrial-grade deployment in automotive control modules, PLCs, and network edge devices.
Package32-lead PLCC (NHE) - through-hole mountable for high-reliability prototyping and legacy board designs.

Pinout & Package

32-lead Plastic Leaded Chip Carrier (PLCC) package with J-lead configuration, RoHS compliant, body size 11.43 mm × 11.43 mm × 3.56 mm.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus supporting full 64K-byte addressing; A15 is MSB for this 512 Kbit device.
DQ0–DQ7Data Input/Output8-bit bidirectional data bus; latched internally during write; tri-stated when CE# or OE# is high.
CE#Chip EnableActive-low chip select; device enters standby mode (15 µA) when high, enabling low-power multi-device bus sharing.
OE#Output EnableActive-low output gate; controls data bus drive without deselecting chip, allowing interleaved reads across multiple devices.
WE#Write EnableActive-low write strobe; initiates byte-program, sector-erase, or chip-erase upon command sequence recognition.
VDDPower Supply2.7–3.6 V supply input; internal charge pump generates programming voltage, eliminating need for external VPP.
VSSGroundReference return path for all signals and power; requires low-impedance connection to minimize noise during erase/write transitions.
NCNo ConnectionPins 16, 17, 24, and 31 are unconnected; must remain floating or tied to ground per layout guidelines.

Key Features

FeatureDesign Value
SuperFlash® TechnologySplit-gate cell with thick-oxide tunneling injector delivers stable 70 ns read timing and fixed 18 ms sector-erase time across full lifecycle.
Hardware + Software Data ProtectionGlitch immunity (<5 ns pulses rejected), VDD power-up/down detection, and mandatory 3-byte/6-byte command sequences prevent accidental writes.
JEDEC-Compliant Command SetStandardized byte-program, sector-erase, chip-erase, and software ID commands ensure interoperability with existing flash drivers and bootloader frameworks.
End-of-Write DetectionDQ7 (Data# Polling) and DQ6 (Toggle Bit) provide deterministic status feedback without requiring precise timing margins or external polling clocks.
Low Standby Current15 µA typical at VDD max - reduces system quiescent power in always-on applications like smart meters or IoT gateways.

Applications

Industrial HMI Firmware StorageAutomotive ECU Bootloader Memory

Use Scenario: Storing updatable GUI assets and configuration profiles in panel-mounted human-machine interface controllers.

IC Role / Device Role / Timing Role: Nonvolatile x8 parallel flash providing direct-read access to firmware images during cold start and runtime patch loading.

Use Value: 70 ns read access enables responsive UI rendering; 4 KB sector granularity allows selective update of language packs without full reflash.

Use Scenario: Holding secure bootloader code and calibration maps in engine control units subject to ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: Field-programmable storage for signed firmware images and sensor compensation tables, accessed via MCU's external memory interface.

Use Value: –40°C to +85°C rating ensures reliability under hood conditions; 100-year data retention preserves calibration integrity over vehicle lifetime.

Medical Device Configuration EEPROM ReplacementNetworking Equipment Boot Image Storage

Use Scenario: Replacing serial EEPROM in portable diagnostic instruments where faster write throughput and higher density are required.

IC Role / Device Role / Timing Role: Parallel-interface flash acting as persistent parameter store for device settings, user preferences, and audit logs.

Use Value: Byte-program capability (20 µs) and sector-erase reduce update latency vs. block-erase-only alternatives; 2.7 V min operation extends battery life.

Use Scenario: Hosting primary boot image and recovery firmware in enterprise switches and routers with hot-swap capability.

IC Role / Device Role / Timing Role: Primary nonvolatile memory mapped into CPU address space for fast initialization and fail-safe fallback execution.

Use Value: Chip-erase time of 100 ms enables rapid firmware rollback; CE#/OE# dual gating supports concurrent memory access in multi-core SoC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AT29LV512-70PUSame 512 Kbit × 8 density, 70 ns access, but uses older EPROM-style architecture with slower erase (1 sec chip-erase) and no Toggle Bit detection.Lacks SuperFlash® fixed-timing guarantee; not recommended for systems requiring predictable erase latency or high-cycle-field updates.Select SST39VF512-70-4I-NHE-T when deterministic 18 ms sector-erase and 10,000-cycle endurance are required.
SST39VF512-70-4C-NHE-TIdentical silicon and pinout, but rated only for 0°C to +70°C commercial temperature range instead of industrial –40°C to +85°C.Not qualified for extended thermal environments; unsuitable for under-hood, outdoor, or factory-floor deployments.Choose SST39VF512-70-4I-NHE-T for industrial temperature compliance; use -4C variant only in climate-controlled enclosures.

Compared with AT29LV512-70PU and SST39VF512-70-4C-NHE-T, the SST39VF512-70-4I-NHE-T delivers guaranteed industrial temperature operation, faster and more consistent erase performance, and superior long-term reliability-making it the preferred choice for mission-critical embedded storage where environmental robustness and update predictability are essential.

Availability

SST39VF512-70-4I-NHE-T is available at Aetrix Electronics and suitable for industrial HMI firmware storage, automotive ECU bootloader memory, medical device configuration storage, and networking equipment boot image storage requiring stable component supply and long-lifecycle support.

Supply support for SST39VF512-70-4I-NHE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontrollers, analog components, and memory solutions, formed through acquisition of Silicon Storage Technology (SST) in 2010.

The SST39VF series belongs to Microchip's legacy parallel flash product line, designed specifically for cost-sensitive, high-reliability embedded systems needing simple x8 interface, low-voltage operation, and field-upgradable nonvolatile storage.

FAQ

What is the maximum operating frequency supported by SST39VF512-70-4I-NHE-T?

The SST39VF512-70-4I-NHE-T does not specify a maximum clock frequency; instead, it defines timing parameters referenced to signal edges. Its 70 ns read access time (TRC) supports reliable operation with bus cycles down to ~14 MHz in standard microprocessor interfaces. System timing must comply with minimum setup/hold requirements in Table 13, not exceed 70 ns address-to-data valid window.

Does SST39VF512-70-4I-NHE-T require an external VPP voltage for programming?

No, the SST39VF512-70-4I-NHE-T integrates an internal charge pump that generates the high voltage needed for programming and erasing. It operates from a single 2.7–3.6 V supply - no external VPP pin or circuitry is required, simplifying board design and reducing BOM count.

How many erase cycles can SST39VF512-70-4I-NHE-T endure before failure?

The SST39VF512-70-4I-NHE-T is rated for a minimum of 10,000 write/erase cycles per sector, as validated per JEDEC Standard A117. This endurance applies across the full industrial temperature range (–40°C to +85°C) and is guaranteed for the entire memory array, not just individual sectors.

Is SST39VF512-70-4I-NHE-T pin-compatible with SST39VF512-70-4C-NHE-T?

Yes, the SST39VF512-70-4I-NHE-T and SST39VF512-70-4C-NHE-T share identical pinout, package (32-lead PLCC), and electrical interface. The sole difference is temperature grade: the "I" suffix denotes industrial –40°C to +85°C qualification, while "C" indicates commercial 0°C to +70°C operation.

What command sequence initiates sector-erase on SST39VF512-70-4I-NHE-T?

To initiate sector-erase on SST39VF512-70-4I-NHE-T, execute the six-byte JEDEC command sequence: 5555H/AAH → 2AAAH/55H → 5555H/80H → 5555H/AAH → 2AAAH/55H → [Sector Address]/30H. The sector address is latched on the falling edge of the sixth WE# pulse, and internal erase begins thereafter.

SST39VF512-70-4I-NHE-T Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
SST39 MPF™
Package/Case:
32-LCC (J-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20µs
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-PLCC (11.43x13.97)

SST39VF512-70-4I-NHE-T FAQ

1.How can I place an order for SST39VF512-70-4I-NHE-T through Aetrix?

Please submit a Request for Quotation (RFQ) for SST39VF512-70-4I-NHE-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SST39VF512-70-4I-NHE-T reliable?

The price and inventory of SST39VF512-70-4I-NHE-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39VF512-70-4I-NHE-T is usually 5 days.

3.What payment methods are accepted for SST39VF512-70-4I-NHE-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39VF512-70-4I-NHE-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SST39VF512-70-4I-NHE-T?

SST39VF512-70-4I-NHE-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SST39VF512-70-4I-NHE-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SST39VF512-70-4I-NHE-T?

For technical support, including SST39VF512-70-4I-NHE-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39VF512-70-4I-NHE-T requirements.

6.How does Aetrix verify that SST39VF512-70-4I-NHE-T is sourced from the original manufacturer or authorized distributors?

All SST39VF512-70-4I-NHE-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39VF512-70-4I-NHE-T meets industry standards.

7.What is the process for return or replacement of SST39VF512-70-4I-NHE-T?

All SST39VF512-70-4I-NHE-T units undergo pre-shipment inspection (PSI). If there is an issue with SST39VF512-70-4I-NHE-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SST39VF512-70-4I-NHE-T part is unused and in its original packaging.

Return procedure for SST39VF512-70-4I-NHE-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SST39VF512-70-4I-NHE-T Tags

  • SST39VF512-70-4I-NHE-T
  • SST39VF512-70-4I-NHE-T PDF
  • SST39VF512-70-4I-NHE-T Datasheet
  • SST39VF512-70-4I-NHE-T Specifications
  • SST39VF512-70-4I-NHE-T Images
  • Microchip Technology
  • Microchip Technology SST39VF512-70-4I-NHE-T
  • Buy SST39VF512-70-4I-NHE-T
  • SST39VF512-70-4I-NHE-T Price
  • SST39VF512-70-4I-NHE-T Distributor
  • SST39VF512-70-4I-NHE-T Supplier
  • SST39VF512-70-4I-NHE-T Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER