Microchip Technology SST39VF800A-70-4C-M1QE-T
- Part No.:
- SST39VF800A-70-4C-M1QE-T
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 48-WFBGA
- Datasheet:
-
SST39VF800A-70-4C-M1QE-T.pdf
- Description:
- IC FLASH 8MBIT PARALLEL 48WFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,672
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SST39VF800A-70-4C-M1QE-T from Microchip Technology is an 8 Mbit (512K × 16) CMOS Multi-Purpose Flash memory IC using SuperFlash technology, supporting single-supply 2.7–3.6V operation for both read and write functions, with 70 ns read access time, 100,000 program/erase cycles endurance, and >100 years data retention - deployed in industrial control firmware storage and embedded boot code applications.
For engineers reviewing the SST39VF800A-70-4C-M1QE-T datasheet, SST39VF800A-70-4C-M1QE-T pinout, SST39VF800A-70-4C-M1QE-T application, or SST39VF800A-70-4C-M1QE-T equivalent, key selection criteria include x16 asynchronous interface timing, JEDEC-standard command set compatibility, sector/block erase granularity, VDD operating range, and TSOP-48 package mechanical fit for legacy PCB layouts.
Technical Context
This device implements a split-gate SuperFlash cell architecture with thick-oxide tunneling injector, enabling fixed erase/program times independent of cycle count - eliminating system-level de-rating. It uses standard microprocessor bus timing with latched address/data and supports JEDEC-compliant command sequences for word-program, sector-erase (2 KWord), block-erase (32 KWord), and chip-erase operations.
Write status detection relies on two hardware-supported software methods: Data# Polling (DQ7) and Toggle Bit (DQ6), both valid after the rising edge of the fourth (program) or sixth (erase) WE# pulse. Hardware protection includes noise/glitch immunity (<5 ns pulses ignored), VDD power-up/down detection (<1.5V inhibits writes), and write-inhibit mode via CE#, OE#, or WE# logic states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16 organization), providing 1 MB of nonvolatile storage for firmware images or configuration tables. |
| Read Access Time | 70 ns - determines maximum sustained read throughput in x16 parallel bus systems (e.g., ~14.3 MB/s theoretical peak). |
| Supply Voltage Range | 2.7–3.6V - enables direct interfacing with 3.3V logic families without level-shifting in industrial and automotive environments. |
| Endurance | 100,000 program/erase cycles - supports field firmware updates over product lifetime without wear-out concerns. |
| Data Retention | >100 years at +85°C - ensures long-term reliability in unpowered storage for critical boot code or calibration data. |
| Erase Granularity | Uniform 2 KWord sectors (4 KB) and 32 KWord blocks (64 KB) - allows fine-grained updates while minimizing erase overhead in partitioned memory layouts. |
| Program Time | 14 µs per word - enables fast incremental writes during runtime configuration or logging without blocking host CPU for extended periods. |
Pinout & Package
Package: 48-lead TSOP (12 mm × 20 mm), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | A0–A17 used for 512K×16 addressing; A18 is MSB for SST39VF800A (enables full 8 Mbit space); NC on smaller variants. |
| DQ0–DQ15 | Data I/O | x16 bidirectional data bus; outputs tri-stated when CE# or OE# high; inputs latched on WE#/CE# edges during writes. |
| CE# | Chip Enable | Active-low chip select; device enters standby (3 µA) when high; required low for all operations except read inhibit. |
| OE# | Output Enable | Active-low output gate; controls DQ bus drive; high disables outputs but does not affect internal state or power. |
| WE# | Write Enable | Active-low control for write cycles; latches address/data and initiates command sequence timing (4th/6th pulse triggers program/erase). |
| VDD | Power Supply | 2.7–3.6V supply; powers core logic and memory array; internal VPP generation eliminates external high-voltage requirement. |
| VSS | Ground | Two dedicated ground pins (pins 23 and 48) reduce noise coupling and improve signal integrity on high-speed reads. |
| NC | No Connect | Pins 9, 10, 12–16, 19, 20, 22, 24, 25, 27, 29, 31, 33, 35, 37, 39, 41, 43, 45, 47 - electrically isolated, must be left floating or tied to ground per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| SuperFlash cell architecture | Split-gate design with thick-oxide tunneling injector delivers stable program/erase times across full lifecycle - no software de-rating needed. |
| JEDEC-standard command set | Compatible with industry-standard flash controllers and bootloader firmware, reducing driver porting effort across platforms. |
| Hardware + software data protection | Combines glitch filtering, VDD monitoring, and mandatory 6-byte erase/3-byte program command sequences to prevent accidental corruption. |
| CFI and Software ID support | Enables automatic device identification and geometry detection at boot - critical for multi-manufacturer BOM flexibility and field upgrade safety. |
| Uniform 4 KB sector / 64 KB block erase | Matches typical embedded filesystem block sizes, simplifying wear-leveling and OTA update partitioning logic. |
Applications
| Industrial PLC Firmware Storage | Automotive ECU Boot Memory |
|---|---|
Use Scenario: Storing programmable logic controller firmware that requires field updates via serial interface under harsh temperature cycling (-40°C to +85°C). IC Role / Device Role / Timing Role: Nonvolatile boot memory holding executable code executed directly by ARM Cortex-M7 MCU upon reset. Use Value: 2.7–3.6V operation ensures compatibility with automotive 3.3V rails; 70 ns access meets real-time scan cycle timing budgets. | Use Scenario: Holding calibrated sensor lookup tables and safety-critical boot code in engine control units subject to ISO 16750-4 vibration and thermal shock. IC Role / Device Role / Timing Role: Primary flash storage for ASIL-B compliant boot ROM, accessed during cold start within 100 ms. Use Value: >100-year data retention guarantees calibration integrity over 15+ year vehicle lifespan without refresh. |
| Medical Device Configuration Storage | Networking Equipment Image Backup |
Use Scenario: Storing FDA-regulated device configuration profiles and audit logs in portable diagnostic equipment with battery-backed SRAM fallback. IC Role / Device Role / Timing Role: Secondary nonvolatile storage for user-defined parameters and calibration offsets, accessed via SPI-to-parallel bridge. Use Value: 100,000-cycle endurance supports daily recalibration routines over 10+ years of clinical use. | Use Scenario: Maintaining redundant firmware images in enterprise switches for zero-downtime failover during remote upgrades. IC Role / Device Role / Timing Role: Dual-image flash bank enabling atomic swap between active/inactive partitions during hot patching. Use Value: Uniform 64 KB block erase allows rapid reprogramming of entire image sections without disturbing adjacent memory regions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SST39VF800A-70-4C-EKE | Same die, identical electrical specs, but packaged in 48-ball TFBGA (6 mm × 8 mm) instead of TSOP-48. | Used where board space is constrained and BGA assembly capability exists; not drop-in compatible due to different footprint and soldering requirements. | Select for compact designs with automated SMT lines; avoid if retrofitting legacy through-hole or TSOP-based boards. |
| MX29LV800CTTI-70G | 8 Mbit x16 flash with 70 ns access, but uses standard NOR architecture (not SuperFlash); 100K endurance, 2.7–3.6V, JEDEC-compatible. | Requires modified timing margins in high-cycle applications due to increasing erase times over lifetime; lacks toggle-bit polling consistency. | Acceptable for cost-sensitive, low-update-frequency applications where long-term cycle stability is not critical. |
Compared with SST39VF800A-70-4C-M1QE-T, the TFBGA variant offers identical functionality in a smaller footprint but demands rework of PCB layout and assembly process, while the MX29LV800CTTI-70G provides pin-compatible voltage/timing but trades off guaranteed fixed erase time and long-term reliability for lower unit cost.
Availability
SST39VF800A-70-4C-M1QE-T is available at Aetrix Electronics and suitable for industrial control, automotive ECU, and medical device applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for SST39VF800A-70-4C-M1QE-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a global semiconductor company delivering microcontrollers, analog, FPGA, and memory solutions with emphasis on reliability, longevity, and embedded system integration.
The SST39VF800A-70-4C-M1QE-T belongs to Microchip's legacy SuperFlash MPF (Multi-Purpose Flash) product line, designed specifically for cost-effective, high-reliability firmware and configuration storage in resource-constrained industrial and automotive systems.
FAQ
What is the exact memory organization of the SST39VF800A-70-4C-M1QE-T?
The SST39VF800A-70-4C-M1QE-T is organized as 512K words × 16 bits, totaling 8 Mbit (1,048,576 bytes). This x16 configuration requires a 17-bit address bus (A0–A16) plus A17/A18 for full decoding, with A18 designated as the most significant address bit for this 8 Mbit variant. The SST39VF800A-70-4C-M1QE-T implements uniform 2 KWord (4 KB) sectors and 32 KWord (64 KB) blocks for erase operations.
Does the SST39VF800A-70-4C-M1QE-T require an external VPP voltage for programming?
No, the SST39VF800A-70-4C-M1QE-T does not require an external VPP voltage. It features internal VPP generation powered solely by the 2.7–3.6V VDD supply, eliminating the need for high-voltage charge pumps or external programming supplies. All program and erase operations are performed using only the main VDD rail, simplifying system power design and reducing bill-of-materials cost.
How does the SST39VF800A-70-4C-M1QE-T indicate completion of a program or erase operation?
The SST39VF800A-70-4C-M1QE-T provides two hardware-supported software detection methods: Data# Polling (DQ7) and Toggle Bit (DQ6). During internal operations, DQ7 returns complemented data until completion, then true data; DQ6 toggles between 0 and 1 until completion, then holds steady. Both are valid after the rising edge of the fourth WE# pulse (program) or sixth WE# pulse (erase), enabling deterministic host polling without fixed delays.
Is the SST39VF800A-70-4C-M1QE-T compatible with standard JEDEC flash controllers?
Yes, the SST39VF800A-70-4C-M1QE-T conforms fully to JEDEC standard pinouts and command sets for x16 flash memories, including common read, word-program, sector-erase, block-erase, and chip-erase sequences. It supports CFI (Common Flash Interface) queries for automatic geometry detection and is recognized by standard flash file systems (e.g., JFFS2, UBIFS) and bootloader frameworks without vendor-specific drivers.
What is the operating temperature range certified for the SST39VF800A-70-4C-M1QE-T?
According to the official Microchip datasheet DS25001A, the SST39VF800A-70-4C-M1QE-T is rated for commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges. Its 2.7–3.6V VDD specification and guaranteed 70 ns access time apply across the full -40°C to +85°C industrial range, making it suitable for deployment in demanding environmental conditions without derating.
SST39VF800A-70-4C-M1QE-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- SST39 MPF™
- Package/Case:
- 48-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20µs
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-WFBGA (6x4)
SST39VF800A-70-4C-M1QE-T FAQ
1.How can I place an order for SST39VF800A-70-4C-M1QE-T through Aetrix?
Please submit a Request for Quotation (RFQ) for SST39VF800A-70-4C-M1QE-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SST39VF800A-70-4C-M1QE-T reliable?
The price and inventory of SST39VF800A-70-4C-M1QE-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39VF800A-70-4C-M1QE-T is usually 5 days.
3.What payment methods are accepted for SST39VF800A-70-4C-M1QE-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39VF800A-70-4C-M1QE-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SST39VF800A-70-4C-M1QE-T?
SST39VF800A-70-4C-M1QE-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SST39VF800A-70-4C-M1QE-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SST39VF800A-70-4C-M1QE-T?
For technical support, including SST39VF800A-70-4C-M1QE-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39VF800A-70-4C-M1QE-T requirements.
6.How does Aetrix verify that SST39VF800A-70-4C-M1QE-T is sourced from the original manufacturer or authorized distributors?
All SST39VF800A-70-4C-M1QE-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39VF800A-70-4C-M1QE-T meets industry standards.
7.What is the process for return or replacement of SST39VF800A-70-4C-M1QE-T?
All SST39VF800A-70-4C-M1QE-T units undergo pre-shipment inspection (PSI). If there is an issue with SST39VF800A-70-4C-M1QE-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SST39VF800A-70-4C-M1QE-T part is unused and in its original packaging.
Return procedure for SST39VF800A-70-4C-M1QE-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SST39VF800A-70-4C-M1QE-T Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

