Microchip Technology SST39VF800A-70-4I-B3KE

Overview

SST39VF800A-70-4I-B3KE from Microchip Technology is an 8 Mbit (512K × 16) CMOS Multi-Purpose Flash memory IC using SuperFlash technology, operating at 2.7–3.6 V with 70 ns read access time and JEDEC-standard x16 asynchronous interface. It delivers 100,000 program/erase cycles and >100 years data retention, deployed in industrial embedded systems for firmware storage and configuration updates.

For engineers reviewing the SST39VF800A-70-4I-B3KE datasheet, SST39VF800A-70-4I-B3KE pinout, SST39VF800A-70-4I-B3KE application, or SST39VF800A-70-4I-B3KE equivalent, this page provides verified package mapping (48-ball TFBGA), sector/block erase timing (18 ms typical), Word-Program time (14 µs), endurance rating, and JEDEC-compliant command set implementation details.

Technical Context

The SST39VF800A-70-4I-B3KE implements a split-gate SuperFlash cell architecture with thick-oxide tunneling injector, enabling fixed erase/program times independent of cycle count. It supports uniform 2 KWord sectors (256 total) and 32 KWord blocks (16 total), with hardware/software data protection including noise/glitch immunity (<5 ns pulse rejection) and VDD power-up/down detection.

It uses standard microprocessor write sequences for command execution - CE# and WE# control latching of address/data on falling/rising edges - and provides two end-of-write detection methods: Data# Polling (DQ7) and Toggle Bit (DQ6), both valid after the sixth WE# pulse for erase operations.

Key Specifications

Pinout & Package

Package: 48-ball TFBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, industrial temperature grade (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Compared with SST39VF800A-70-4I-B3KE, the -4C variant trades industrial temperature qualification for lower cost in benign environments, while MX29LV800CTTC-70G introduces package and feature compromises requiring layout changes and firmware adaptation.

Availability

SST39VF800A-70-4I-B3KE is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and guaranteed RoHS compliance.

Supply support for SST39VF800A-70-4I-B3KE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and memory solutions, acquired Silicon Storage Technology (SST) in 2010 to expand its nonvolatile memory portfolio.

The SST39VF800A-70-4I-B3KE belongs to the SST39VF family of Multi-Purpose Flash devices designed for cost-sensitive, high-reliability embedded applications requiring in-system programmability, low power, and JEDEC-standard interoperability.

FAQ

What is the maximum operating temperature range for the SST39VF800A-70-4I-B3KE?

The SST39VF800A-70-4I-B3KE is rated for industrial temperature operation from –40°C to +85°C, validated per Microchip's DS25001A datasheet. This range ensures reliable functionality in demanding environments such as factory automation controllers and automotive cabin electronics where ambient heat and thermal cycling occur. The "I" suffix in the part number explicitly denotes industrial grade, distinguishing it from commercial-grade variants like SST39VF800A-70-4C-B3KE.

Does the SST39VF800A-70-4I-B3KE support Common Flash Interface (CFI) queries?

Yes, the SST39VF800A-70-4I-B3KE fully supports CFI Query mode per JEDEC JESD68 standard. By issuing the three-byte command sequence (5555H/AAH → 2AAAH/55H → 5555H/98H), the device exposes geometry, timing, and voltage parameters at standardized CFI address offsets. This enables host firmware to auto-detect sector count (256), block size (64 KByte), and VDD programming range (2.7–3.6 V), eliminating hard-coded assumptions in bootloader code.

How many erase sectors and blocks does the SST39VF800A-70-4I-B3KE have?

The SST39VF800A-70-4I-B3KE contains 256 uniform 2 KWord (4 KByte) sectors and 16 uniform 32 KWord (64 KByte) blocks. This is confirmed by CFI Query Table 9 (address 2DH–34H) and the device geometry specification in DS25001A Section 13. Sector granularity enables fine-grained firmware updates, while block erase accelerates full-image reprogramming - both executed via JEDEC-standard command sequences with no external high-voltage supply required.

What is the purpose of the AMS pin designation in the SST39VF800A-70-4I-B3KE datasheet?

In the SST39VF800A-70-4I-B3KE, AMS refers to the Most Significant Address line - specifically A18 for this 8 Mbit variant - used during Block-Erase to select one of 16 blocks. Unlike lower-density variants (e.g., SST39VF200A uses A16), AMS mapping is density-dependent and critical for correct command execution: applying a Block-Erase command with incorrect AMS addressing will target the wrong memory region. Table 1 and Figure 3 confirm A18 as the active AMS pin for SST39VF800A.

Is the SST39VF800A-70-4I-B3KE pin-compatible with the SST39LF800A series?

Yes, the SST39VF800A-70-4I-B3KE is pin-compatible with SST39LF800A variants in the same package (e.g., 48-ball TFBGA), sharing identical pin assignments, JEDEC-standard x16 interface, and command protocol. Key differences are supply voltage (2.7–3.6 V vs. 3.0–3.6 V) and read access time (70 ns vs. 55 ns). No PCB changes are needed for substitution, but system-level validation of timing margins and voltage rail stability is required due to the wider VDD range.