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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Microchip Technology SST39WF800B-70-4C-B3KE

Name: SST39WF800B-70-4C-B3KE
Brand: Microchip Technology
SKU: SST39WF800B-70-4C-B3KE
Price: 2.40 USD
Availability: InStock
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Part No.:: SST39WF800B-70-4C-B3KE

Manufacturer:: Microchip Technology

Category:: Memory

Package:: 48-TFBGA

Datasheet:: SST39WF800B-70-4C-B3KE.pdf

Description:: IC FLASH 8MBIT PARALLEL 48TFBGA

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Product details

Overview

SST39WF800B-70-4C-B3KE from Microchip Technology is an 8 Mbit (512K × 16) Multi-Purpose Flash memory IC using SuperFlash technology, operating at 1.65–1.95 V for both read and write functions, featuring 70 ns read access time, sector/block/whole-chip erase capability, and JEDEC-standard x16 asynchronous interface. It serves as nonvolatile program/data storage in embedded controllers requiring low-voltage, high-reliability flash with fast word-program (28 µs typical) and uniform 2 KWord sectors.

For engineers reviewing the SST39WF800B-70-4C-B3KE datasheet, SST39WF800B-70-4C-B3KE pinout, SST39WF800B-70-4C-B3KE application, or SST39WF800B-70-4C-B3KE equivalent, this page delivers verified electrical specs, JEDEC-compliant pin mapping, SuperFlash reliability metrics (100,000 cycles, >100 years retention), and real-world use context for industrial firmware storage, FPGA configuration, and boot code retention.

Technical Context

The SST39WF800B-70-4C-B3KE implements a split-gate SuperFlash cell architecture with thick-oxide tunneling injector, enabling fixed erase/program times independent of cycle count-unlike conventional NOR flash. Its command-set follows JEDEC-standard x16 pinouts and supports Software Data Protection (SDP) via three-byte (program) or six-byte (erase) sequences.

It uses CMOS I/O compatibility with VIL = 0.2VDD and VIH = 0.8VDD, supports toggle-bit (DQ6) and data# polling (DQ7) for end-of-write detection, and integrates internal VPP generation-eliminating external high-voltage supplies. The device operates across commercial (0°C to +70°C) and industrial (−40°C to +85°C) temperature ranges with 1.65–1.95 V supply.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	512K × 16 (8 Mbit total); enables 16-bit parallel data bus interfacing with microcontrollers and SoCs without data-width translation.
Read Access Time	70 ns max; meets timing requirements for 14 MHz synchronous bus operation with minimal wait states.
Supply Voltage	1.65–1.95 V; compatible with modern low-power 1.8 V system rails and eliminates need for level shifters.
Endurance	10,000 min / 100,000 typical erase/write cycles; qualified per JEDEC A117, supporting frequent firmware updates in field-deployed devices.
Data Retention	>100 years at 25°C; validated per JEDEC A103, ensuring long-term integrity of boot code and calibration data.
Erase Granularity	Uniform 2 KWord sectors (4 KB) and 32 KWord blocks (64 KB); allows selective firmware patching without full chip reprogramming.
Word-Program Time	28 µs typical (40 µs max); reduces over-the-air update latency and improves system responsiveness during field upgrades.

Pinout & Package

Package: 48-ball WFBGA (4 mm × 6 mm), RoHS-compliant, suitable for space-constrained portable and industrial PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	A0–A17 select 512K words; A18 (AMS) is most-significant address used for sector/block selection during erase commands.
DQ0–DQ15	Data I/O	16-bit bidirectional bus; latched internally during writes; tri-stated when CE# or OE# is high to prevent bus contention.
CE#	Chip Enable	Active-low device select; must be low for read/write operations; high state places device in standby (≤40 µA).
OE#	Output Enable	Active-low output gate; controls DQ bus drive; high or floating disables outputs (high-Z) independently of CE#.
WE#	Write Enable	Active-low control for write cycles; latches address/data on falling/rising edges per JEDEC timing; initiates internal program/erase.
VDD	Power Supply	1.65–1.95 V core supply; powers logic and SuperFlash array; requires local 100 nF decoupling per datasheet layout guidelines.
VSS	Ground	Dual ground balls (pins E1, L6) reduce noise coupling and improve signal integrity in high-speed read cycles.
NC	No Connection	Unbonded pads (e.g., pins C1, D1, F1); must remain unconnected per design-no pull-up/down or routing allowed.

Key Features

Feature	Design Value
SuperFlash Technology	Split-gate cell with thick-oxide tunneling injector enables fixed 28 µs program and 36 ms erase times-no degradation over lifetime.
JEDEC x16 Compliance	Fully conforms to JEDEC standard pinouts and command sets, ensuring drop-in compatibility with existing 16-bit flash designs.
Hardware + Software Protection	Includes noise/glitch immunity (<5 ns pulse rejection), VDD power-up/down detection, and mandatory SDP command sequences to prevent accidental writes.
End-of-Write Detection	Toggle Bit (DQ6) and Data# Polling (DQ7) provide deterministic, software-driven status checking without external timers or interrupts.
Low-Power Operation	5 mA active current (5 MHz), 5 µA typical standby, and 40 µA max ISB enable battery-backed and energy-harvesting applications.

Applications

Industrial PLC Firmware Storage	Automotive Infotainment Boot Memory
Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers deployed in factory automation environments with wide temperature swings and EMI exposure. IC Role / Device Role / Timing Role: Nonvolatile program memory holding executable firmware images; accessed during cold boot and field OTA updates via RS-485 or CAN. Use Value: 100,000-cycle endurance and >100-year data retention ensure reliable operation over 15+ year equipment lifecycles without recalibration or replacement.	Use Scenario: Holding bootloader and OS kernel images in automotive head units, where rapid boot time and immunity to voltage droop during engine cranking are critical. IC Role / Device Role / Timing Role: Primary boot flash accessed by ARM Cortex-A MCU immediately after power-on reset; 70 ns access enables sub-100 ms boot sequence. Use Value: 1.65–1.95 V operation tolerates battery dips to 1.7 V during cranking; sector-erase allows safe partial updates without corrupting active boot partition.
FPGA Configuration Storage	Medical Device Calibration Data
Use Scenario: Storing bitstream configuration for Xilinx Spartan or Intel MAX 10 FPGAs in portable diagnostic instruments requiring instant-on functionality and tamper-resistant settings. IC Role / Device Role / Timing Role: Parallel x16 configuration memory loaded at power-up via dedicated FPGA INIT_B/CCLK interface; supports active serial and master SPI modes. Use Value: Uniform 4 KB sectors allow secure, atomic rewrites of FPGA configuration regions; SuperFlash low-energy erase minimizes inrush current during configuration reload.	Use Scenario: Retaining sensor calibration coefficients, patient history logs, and regulatory audit trails in Class II medical devices such as infusion pumps and portable ECG monitors. IC Role / Device Role / Timing Role: Secure, write-protected nonvolatile data vault; accessed only by authenticated firmware during calibration routines or diagnostics. Use Value: Hardware write-inhibit (OE#/CE#/WE# high) and SDP six-byte erase lock prevent unauthorized modification; >100-year retention satisfies FDA 21 CFR Part 11 long-term recordkeeping mandates.

Industrial PLC Firmware Storage

Automotive Infotainment Boot Memory

Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers deployed in factory automation environments with wide temperature swings and EMI exposure.

IC Role / Device Role / Timing Role: Nonvolatile program memory holding executable firmware images; accessed during cold boot and field OTA updates via RS-485 or CAN.

Use Value: 100,000-cycle endurance and >100-year data retention ensure reliable operation over 15+ year equipment lifecycles without recalibration or replacement.

Use Scenario: Holding bootloader and OS kernel images in automotive head units, where rapid boot time and immunity to voltage droop during engine cranking are critical.

IC Role / Device Role / Timing Role: Primary boot flash accessed by ARM Cortex-A MCU immediately after power-on reset; 70 ns access enables sub-100 ms boot sequence.

Use Value: 1.65–1.95 V operation tolerates battery dips to 1.7 V during cranking; sector-erase allows safe partial updates without corrupting active boot partition.

FPGA Configuration Storage

Medical Device Calibration Data

Use Scenario: Storing bitstream configuration for Xilinx Spartan or Intel MAX 10 FPGAs in portable diagnostic instruments requiring instant-on functionality and tamper-resistant settings.

IC Role / Device Role / Timing Role: Parallel x16 configuration memory loaded at power-up via dedicated FPGA INIT_B/CCLK interface; supports active serial and master SPI modes.

Use Value: Uniform 4 KB sectors allow secure, atomic rewrites of FPGA configuration regions; SuperFlash low-energy erase minimizes inrush current during configuration reload.

Use Scenario: Retaining sensor calibration coefficients, patient history logs, and regulatory audit trails in Class II medical devices such as infusion pumps and portable ECG monitors.

IC Role / Device Role / Timing Role: Secure, write-protected nonvolatile data vault; accessed only by authenticated firmware during calibration routines or diagnostics.

Use Value: Hardware write-inhibit (OE#/CE#/WE# high) and SDP six-byte erase lock prevent unauthorized modification; >100-year retention satisfies FDA 21 CFR Part 11 long-term recordkeeping mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SST39VF800A-70-4C-B3KE	Lower endurance (10,000 cycles min), 2.7–3.6 V operation, no SuperFlash fixed-timing guarantee; shares same pinout and command set.	Targeted at legacy 3.3 V systems; unsuitable for 1.8 V rail or high-cycle-count firmware update scenarios.	Select only if migrating from older SST39VF series and voltage margin permits 2.7 V minimum.
MX29LV800CBTI-70G	3.0 V core, 100,000-cycle endurance, but slower 90 ns access and no built-in SDP-requires external hardware protection.	Used in cost-sensitive consumer electronics; lacks SuperFlash energy efficiency and fixed timing predictability.	Consider only when 3.3 V supply is fixed and system-level write protection can be implemented externally.

Compared with SST39VF800A-70-4C-B3KE and MX29LV800CBTI-70G, the SST39WF800B-70-4C-B3KE uniquely delivers 1.8 V operation, guaranteed fixed erase/program timing, and integrated JEDEC-compliant SDP-making it the sole choice for next-gen ultra-low-power, high-integrity embedded firmware storage.

Availability

SST39WF800B-70-4C-B3KE is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive infotainment boot memory, FPGA configuration storage, and medical device calibration data retention requiring stable component supply across extended product lifecycles.

Supply support for SST39WF800B-70-4C-B3KE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Silicon Storage Technology (SST) in 2010 and now develops and manufactures SuperFlash-based nonvolatile memory products for embedded systems.

The SST39WF800B-70-4C-B3KE belongs to Microchip's Multi-Purpose Flash (MPF) product line, designed specifically for low-voltage, high-reliability firmware and configuration storage in space- and power-constrained industrial, automotive, and medical applications.

FAQ

What is the guaranteed minimum endurance rating for SST39WF800B-70-4C-B3KE?

The SST39WF800B-70-4C-B3KE is rated for a minimum of 10,000 erase/write cycles per JEDEC Standard A117, with typical performance reaching 100,000 cycles. This endurance is validated across all sectors and blocks-not just sample locations-and applies under specified 1.65–1.95 V and −40°C to +85°C conditions. The SST39WF800B-70-4C-B3KE achieves this via SuperFlash split-gate cell architecture, which avoids charge-trapping degradation seen in conventional NOR flash.

Does SST39WF800B-70-4C-B3KE support both sector and block erase, and what are their sizes?

Yes, the SST39WF800B-70-4C-B3KE supports uniform sector erase (2 KWord = 4 KB) and uniform block erase (32 KWord = 64 KB), each initiated via distinct six-byte command sequences. Sector erase targets individual 4 KB regions using AMS–A11 address lines; block erase selects 64 KB segments using AMS–A15. Both complete in 36 ms typical, with Chip-Erase taking 140 ms typical. The SST39WF800B-70-4C-B3KE does not support partial-word or byte-level programming-only full 16-bit word writes.

How is write completion detected on SST39WF800B-70-4C-B3KE?

The SST39WF800B-70-4C-B3KE provides two hardware-supported methods: Toggle Bit (DQ6 toggles between 0/1 during operation, stops when complete) and Data# Polling (DQ7 complements data during programming, returns true value upon finish). Both are valid after the fourth WE# pulse for programming and sixth WE# pulse for erases. The SST39WF800B-70-4C-B3KE requires two consecutive stable reads to confirm completion and avoid spurious results due to asynchronous timing.

Is SST39WF800B-70-4C-B3KE compatible with standard JEDEC x16 flash interfaces?

Yes, the SST39WF800B-70-4C-B3KE fully complies with JEDEC standard pin assignments, command sets, and timing definitions for x16 asynchronous NOR flash. Its CE#, OE#, WE#, A0–A18, and DQ0–DQ15 signals match JEDEC 44-pin TSOP and 48-ball BGA footprints. The SST39WF800B-70-4C-B3KE supports standard read, word-program, and sector/block-erase commands-including the JEDEC-approved Software Data Protection protocol-ensuring interoperability with existing flash controllers and BIOS/UEFI firmware stacks.

What package type is used for SST39WF800B-70-4C-B3KE, and are there thermal considerations?

The SST39WF800B-70-4C-B3KE uses a 48-ball WFBGA package (4 mm × 6 mm), optimized for low-profile, high-density PCB layouts. Its thermal resistance (θJA) is not explicitly published, but the datasheet specifies a maximum package power dissipation of 1.0 W at TA = 25°C and surface-mount reflow at 260°C for 10 seconds. The SST39WF800B-70-4C-B3KE requires standard BGA soldering profiles and recommends thermal vias under the exposed pad (if present) per Microchip's board layout guidelines to maintain junction temperature within −40°C to +85°C industrial range.

SST39WF800B-70-4C-B3KE Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: SST39 MPF™

Package/Case:: 48-TFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH

Memory Size:: 8Mbit

Memory Organization:: 512K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 40µs

Access Time:: 70 ns

Voltage - Supply:: 1.65V ~ 1.95V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TFBGA

SST39WF800B-70-4C-B3KE FAQ

1.How can I place an order for SST39WF800B-70-4C-B3KE through Aetrix?

Please submit a Request for Quotation (RFQ) for SST39WF800B-70-4C-B3KE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SST39WF800B-70-4C-B3KE reliable?

The price and inventory of SST39WF800B-70-4C-B3KE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39WF800B-70-4C-B3KE is usually 5 days.

3.What payment methods are accepted for SST39WF800B-70-4C-B3KE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39WF800B-70-4C-B3KE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SST39WF800B-70-4C-B3KE?

SST39WF800B-70-4C-B3KE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SST39WF800B-70-4C-B3KE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SST39WF800B-70-4C-B3KE?

For technical support, including SST39WF800B-70-4C-B3KE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39WF800B-70-4C-B3KE requirements.

6.How does Aetrix verify that SST39WF800B-70-4C-B3KE is sourced from the original manufacturer or authorized distributors?

All SST39WF800B-70-4C-B3KE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39WF800B-70-4C-B3KE meets industry standards.

7.What is the process for return or replacement of SST39WF800B-70-4C-B3KE?

All SST39WF800B-70-4C-B3KE units undergo pre-shipment inspection (PSI). If there is an issue with SST39WF800B-70-4C-B3KE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SST39WF800B-70-4C-B3KE part is unused and in its original packaging.

Return procedure for SST39WF800B-70-4C-B3KE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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