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Microchip Technology SST39WF800B-70-4I-B3KE
- Part No.:
- SST39WF800B-70-4I-B3KE
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
SST39WF800B-70-4I-B3KE.pdf
- Description:
- IC FLASH 8MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,621
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Product details
Overview
SST39WF800B-70-4I-B3KE from Microchip Technology is an 8 Mbit (512K × 16) Multi-Purpose Flash memory IC using SuperFlash technology, operating at 1.65–1.95 V, with 70 ns read access time, 100,000 program/erase cycles endurance, and >100-year data retention. It serves as nonvolatile code/data storage in embedded microcontroller boot loaders and firmware update modules.
For engineers reviewing the SST39WF800B-70-4I-B3KE datasheet, SST39WF800B-70-4I-B3KE pinout, SST39WF800B-70-4I-B3KE application, or SST39WF800B-70-4I-B3KE equivalent, this page delivers verified pin functions, JEDEC-compliant x16 asynchronous interface timing, sector/block/Chip-Erase command sequences, and real-world design implications of Toggle Bit/DQ7 polling for write completion detection.
Technical Context
The SST39WF800B-70-4I-B3KE implements a split-gate SuperFlash cell architecture with thick-oxide tunneling injector, enabling fixed 28 µs Word-Program and 36 ms Sector/Block-Erase times independent of cycle count. Its JEDEC-standard x16 pinout supports CE#/OE#/WE# control logic and latched address/data buses.
It features dual software write detection (Data# Polling on DQ7 and Toggle Bit on DQ6), hardware noise/glitch protection (<5 ns pulse rejection), VDD power-up/down detection (<1.0 V inhibit), and permanent Software Data Protection requiring six-byte command sequences for erase operations - all compliant with CFI Query mode (SST and general).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 16 (8 Mbit total); enables 16-bit parallel data transfers aligned with ARM Cortex-M3/M4 or RISC-V MCU external bus interfaces. |
| Read Access Time | 70 ns; meets timing budget for 14 MHz synchronous bus operation without wait states in industrial temperature range. |
| Supply Voltage | 1.65–1.95 V; compatible with low-voltage SoC I/O domains and eliminates need for level shifters in 1.8 V systems. |
| Endurance | 100,000 cycles (typical); supports field firmware updates every 3 days over 80+ years before wear-out threshold. |
| Data Retention | >100 years at 85°C; validated per JEDEC A103, ensuring reliability in unpowered storage for medical or aerospace black-box loggers. |
| Active Current | 5 mA typical at 5 MHz; reduces thermal load in fanless edge gateways versus legacy 3.3 V NOR flash. |
| Standby Current | 5 µA typical; enables ultra-low-power sleep modes in battery-backed IoT sensor nodes. |
Pinout & Package
Package: 48-ball WFBGA (4 mm × 6 mm), RoHS-compliant, suitable for high-density PCB layouts in portable industrial HMIs and automotive telematics modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | A0–A17 select 512K words; A18 (AMS) enables full 8 Mbit addressing and determines sector/block address bits during erase commands. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional bus; tri-stated when CE# or OE# is high; DQ6 = Toggle Bit, DQ7 = Data# Polling for write status. |
| CE# | Chip Enable | Active-low device selection; must be low for read/write; supports WE#/CE# interchangeable timing per Table 15. |
| OE# | Output Enable | Active-low output gating; controls data bus drive; required low with CE# for valid read outputs. |
| WE# | Write Enable | Active-low write control; latches address/data on falling/rising edges per JEDEC standard; initiates internal Program/Erase after 4th/6th pulse. |
| VDD | Power Supply | 1.65–1.95 V supply; powers core and I/O; internal VPP generation eliminates external high-voltage charge pump. |
| VSS | Ground | Two dedicated ground balls (pins E1, L6) reduce ground bounce in high-speed read bursts. |
| NC | No Connection | Unbonded balls (e.g., C3, D3, E3, F3, G3, H3, J3, K3, L3, L4, L5) simplify routing and improve signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| SuperFlash Cell Architecture | Split-gate + thick-oxide tunneling injector ensures stable erase/program times across 100k cycles - no system-level de-rating needed. |
| Uniform Erase Granularity | 2 KWord sectors (4 KB) and 32 KWord blocks (64 KB) enable precise firmware patching without full-chip erasure. |
| Automatic Write Timing | Internal VPP generation and self-timed erase/program eliminate external timing circuitry and reduce BOM cost. |
| JEDEC Pin & Command Compliance | Standard x16 pinout and command set (e.g., 5555H/2AAAH/A0H for program) ensure drop-in compatibility with existing NOR flash designs. |
| CFI Query Support | Both SST-specific and general CFI modes allow runtime identification and parameter auto-configuration in bootloader code. |
Applications
| Industrial PLC Firmware Storage | Automotive Infotainment Boot Code |
|---|---|
Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers deployed in factory automation lines. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast 70 ns reads enabling deterministic scan-cycle execution; sector-erase allows incremental firmware patches without downtime. Use Value: Eliminates need for external EEPROM + SRAM combo; 100k endurance supports daily firmware validation in QA labs. |
Use Scenario: Holding boot loader and safety-critical initialization code in head-unit ECUs subject to ASIL-B requirements. IC Role / Device Role / Timing Role: Primary boot memory mapped to ARM Cortex-A53 reset vector; CFI Query enables runtime verification of flash geometry before loading OS image. Use Value: >100-year data retention ensures integrity over vehicle lifetime; 1.65–1.95 V operation matches SoC I/O rail, avoiding level-shifter failures. |
| Medical Diagnostic Device Configuration | Smart Energy Meter Calibration Data |
Use Scenario: Storing calibration coefficients and regulatory compliance parameters in portable ultrasound machines requiring FDA audit trails. IC Role / Device Role / Timing Role: Secure configuration storage with Software Data Protection enabled; Toggle Bit polling prevents race conditions during field recalibration. Use Value: Permanent SDP prevents accidental overwrite during hot-swap battery replacement; 5 µA standby current extends battery life between calibrations. |
Use Scenario: Retaining tariff tables, metering history, and cryptographic keys in ANSI C12.22-compliant smart meters deployed in utility substations. IC Role / Device Role / Timing Role: Tamper-resistant nonvolatile memory with hardware write inhibit during brownout; Chip-Erase (140 ms typical) enables secure key zeroization on decommissioning. Use Value: Dual ground pins and 125°C bias rating support operation inside sealed outdoor enclosures; RoHS compliance meets EU WEEE directives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SST39VF800A-70-4C-B3KE | Same 8 Mbit x16 organization and SuperFlash tech, but rated for 0°C to +70°C (Commercial) vs. -40°C to +85°C (Industrial); 70 ns access time identical. | Lacks extended temperature qualification; unsuitable for under-hood automotive or outdoor industrial deployments. | Select SST39VF800A-70-4C-B3KE only for cost-sensitive commercial-grade consumer electronics with ambient thermal management. |
| MX29LV800CTTC-70G | 8 Mbit x16 CMOS flash with 70 ns access, but uses traditional floating-gate architecture; 100k cycles and 20-year retention (vs. >100 years); requires 3.0 V ± 0.3 V supply. | Higher voltage requirement mandates level shifting in 1.8 V systems; shorter retention limits use in long-life infrastructure equipment. | Choose MX29LV800CTTC-70G only when legacy 3.3 V design reuse is mandatory and retention beyond 20 years is not required. |
Compared with SST39VF800A-70-4C-B3KE and MX29LV800CTTC-70G, the SST39WF800B-70-4I-B3KE uniquely combines industrial temperature range, 1.65–1.95 V operation, and >100-year retention - making it the sole option for mission-critical, low-voltage, long-lifecycle embedded systems where firmware integrity must survive decades without maintenance.
Availability
SST39WF800B-70-4I-B3KE is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive infotainment boot code, medical diagnostic device configuration, smart energy meter calibration data, and embedded bootloader applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SST39WF800B-70-4I-B3KE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and memory solutions, with deep expertise in embedded control and secure connectivity.
The SST39WF800B-70-4I-B3KE belongs to Microchip's SuperFlash Multi-Purpose Flash product line, engineered for low-voltage, high-reliability code and configuration storage in industrial, automotive, and medical systems demanding extended data retention and robust write endurance.
FAQ
What is the guaranteed minimum endurance rating for SST39WF800B-70-4I-B3KE?
The SST39WF800B-70-4I-B3KE is qualified to a minimum of 10,000 program/erase cycles per JEDEC Standard A117, with a typical specification of 100,000 cycles. This endurance applies to the entire device - not just individual sectors - and is validated across the full industrial temperature range (-40°C to +85°C). The SST39WF800B-70-4I-B3KE achieves this via SuperFlash split-gate cell architecture, which maintains consistent erase/program times regardless of accumulated cycles.
Does SST39WF800B-70-4I-B3KE support CFI Query mode, and how is it entered?
Yes, the SST39WF800B-70-4I-B3KE supports both SST-specific and general Common Flash Interface (CFI) Query modes. To enter SST CFI mode, write 98H to address 5555H using the three-byte sequence (5555H/AAH → 2AAAH/55H → 5555H/98H). For general CFI mode, issue a one-byte command: write 98H to address 55H. CFI data resides at addresses defined in Tables 5–7 and provides runtime-accessible geometry, timing, and interface descriptors critical for bootloader portability.
How does the SST39WF800B-70-4I-B3KE handle write completion detection?
The SST39WF800B-70-4I-B3KE provides two hardware-supported methods: Data# Polling (DQ7 toggles complement/data state until operation completes) and Toggle Bit (DQ6 alternates 0/1 during active erase/program). Both are valid after the rising edge of the 4th WE#/CE# pulse (program) or 6th pulse (erase). The SST39WF800B-70-4I-B3KE requires two consecutive identical reads to confirm completion and avoid spurious rejection due to asynchronous timing alignment.
What package type is used for SST39WF800B-70-4I-B3KE, and what are its board-level implications?
The SST39WF800B-70-4I-B3KE uses a 48-ball WFBGA package (4 mm × 6 mm), with ball pitch of 0.5 mm. This micro-package enables high-density routing in space-constrained applications like automotive ADAS modules and handheld test equipment. Its two dedicated VSS balls (E1, L6) lower ground impedance, while 10 NC balls (C3–L3, L4–L5) simplify escape routing and reduce crosstalk - critical for maintaining signal integrity at 14 MHz bus speeds.
Is SST39WF800B-70-4I-B3KE compatible with 3.3 V systems?
No - the SST39WF800B-70-4I-B3KE operates exclusively within 1.65–1.95 V. Applying 3.3 V will exceed absolute maximum ratings and cause permanent damage. It is designed for direct interfacing with 1.8 V I/O domains of modern MCUs and SoCs. If integration into a 3.3 V system is required, level-shifting circuitry must be added; however, doing so negates the low-power advantage and risks timing violations due to added propagation delay.
SST39WF800B-70-4I-B3KE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- SST39 MPF™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 40µs
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.65V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA
SST39WF800B-70-4I-B3KE FAQ
1.How can I place an order for SST39WF800B-70-4I-B3KE through Aetrix?
Please submit a Request for Quotation (RFQ) for SST39WF800B-70-4I-B3KE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SST39WF800B-70-4I-B3KE reliable?
The price and inventory of SST39WF800B-70-4I-B3KE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SST39WF800B-70-4I-B3KE is usually 5 days.
3.What payment methods are accepted for SST39WF800B-70-4I-B3KE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SST39WF800B-70-4I-B3KE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SST39WF800B-70-4I-B3KE?
SST39WF800B-70-4I-B3KE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SST39WF800B-70-4I-B3KE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SST39WF800B-70-4I-B3KE?
For technical support, including SST39WF800B-70-4I-B3KE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SST39WF800B-70-4I-B3KE requirements.
6.How does Aetrix verify that SST39WF800B-70-4I-B3KE is sourced from the original manufacturer or authorized distributors?
All SST39WF800B-70-4I-B3KE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SST39WF800B-70-4I-B3KE meets industry standards.
7.What is the process for return or replacement of SST39WF800B-70-4I-B3KE?
All SST39WF800B-70-4I-B3KE units undergo pre-shipment inspection (PSI). If there is an issue with SST39WF800B-70-4I-B3KE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SST39WF800B-70-4I-B3KE part is unused and in its original packaging.
Return procedure for SST39WF800B-70-4I-B3KE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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