Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics ST13003DN

Name: ST13003DN
Brand: STMicroelectronics
SKU: ST13003DN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: ST13003DN

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: ST13003DN.pdf

Description:: TRANS NPN 400V 1A SOT-32-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,048

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

ST13003DN from STMicroelectronics is a high-voltage fast-switching NPN power transistor with integrated free-wheeling diode, rated for V_CES = 700 V, I_C = 1 A, and P_TOT = 20 W at T_C = 25 °C. It is designed for compact fluorescent lamp (CFL) electronic ballasts requiring high dV/dt immunity, low storage time (t_s = 2.5 µs), and robust RBSOA under inductive switching.

For engineers reviewing the ST13003DN datasheet, ST13003DN pinout, ST13003DN application in CFL ballasts, or ST13003DN equivalent for high-voltage switching transistors, this page provides verified electrical ratings, thermal data, package dimensions, and functional alternatives aligned to ST's preliminary specification Doc ID 17186 Rev 1.

Technical Context

This device uses high-voltage multi-epitaxial planar technology with cellular emitter structure and planar edge termination to simultaneously achieve high voltage blocking (V_CEO = 400 V) and fast switching (t_f = 180 ns, t_s = 2.5 µs). Its integrated free-wheeling diode (V_F = 1.5 V @ 350 mA) enables self-contained flyback energy recovery in single-transistor CFL topologies.

The transistor operates with DC current gain h_FE = 6–18 (IC = 0.5 A, V_CE = 2 V), V_CE(sat) = 0.7–1.2 V, and V_BE(sat) = 1.2–1.3 V, supporting base-driven switching with IB(on)/IB(off) = ±80 mA in inductive load test conditions per Figure 2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	700 V - Maximum collector-emitter voltage with base open; defines safe operation in high-voltage CFL resonant circuits.
I_C	1 A continuous - Sustained collector current rating at T_C = 25 °C; supports typical CFL lamp power up to ~25 W.
t_s	2.5 µs - Storage time under inductive switching; enables >30 kHz operation with minimal switching loss.
R_thJC	6.25 °C/W - Junction-to-case thermal resistance; requires heatsink design for sustained 20 W dissipation.
V_F	1.5 V @ 350 mA - Forward voltage of integrated diode; reduces external component count in flyback snubberless designs.
h_FE	6–18 - DC current gain range across operating conditions; determines required base drive current for saturation.

Pinout & Package

SOT-32 (TO-225AA) package: molded plastic case with 3 leads, isolated heat slug, ECOPACK® compliant. Case temperature measurement point defined at mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	Low-side return path; connected to ground reference in CFL half-bridge driver stage.
2 (Collector)	Collector terminal	High-voltage switching node; interfaces directly to resonant tank and mains-referenced bus.
3 (Base)	Base control input	Current-driven gate; requires ±80 mA peak drive for fast turn-on/turn-off per inductive test circuit.

Key Features

Feature	Design Value
Integrated free-wheeling diode	Eliminates need for external flyback diode in CFL resonant inverters, reducing BOM count and PCB area.
Cellular emitter + planar edge termination	Enables simultaneous 700 V blocking and 180 ns fall time without compromising ruggedness in repetitive avalanche.
Low dynamic parameter spread	Ensures consistent timing and power distribution across production lots in mass-produced CFL ballasts.
Wide RBSOA	Supports safe operation under inductive switching stress (e.g., lamp ignition surge) without secondary breakdown.

Applications

Compact Fluorescent Lamp (CFL) Ballast

Electronic Starter Circuit

Use Scenario: High-frequency resonant inverter driving 11–25 W CFL tubes with instant start capability.

IC Role / Device Role / Timing Role: Main switching transistor controlling resonant tank current and enabling zero-voltage switching during lamp ignition.

Use Value: Integrated diode and 2.5 µs storage time reduce EMI and enable reliable cold-start performance below –20 °C.

Use Scenario: Preheating and ignition sequence control in digital CFL controllers with discrete power stage.

IC Role / Device Role / Timing Role: Fast-turnoff switch interrupting preheat current to induce high-voltage pulse across lamp electrodes.

Use Value: 400 V V_CEO(sus) withstands lamp open-circuit transients; 180 ns fall time ensures precise pulse width control.

AC-DC Off-line SMPS Auxiliary Switch

Inductive Load Snubberless Driver

Use Scenario: Auxiliary high-side switch in 12–24 W off-line flyback converters powering control ICs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in low-cost auxiliary supplies.

Use Value: 700 V V_CES rating allows direct connection to rectified mains; integrated diode simplifies layout.

Use Scenario: Solenoid or relay driver in industrial control modules where external snubbers are prohibited.

IC Role / Device Role / Timing Role: Unidirectional inductive load switch with built-in energy recirculation path.

Use Value: 1.5 V diode forward drop limits clamp loss; 6.25 °C/W R_thJC enables 1 A continuous drive without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ST13005D	V_CES = 700 V, I_C = 1.5 A, t_s = 3.0 µs - higher current but slower storage time.	Supports higher-power CFLs (>30 W); less suitable for tight-timing ignition sequences.	Select when thermal margin >20% is needed and switching frequency ≤25 kHz.
BU508A	V_CEO = 1500 V, no integrated diode, TO-220 package - higher voltage, discrete diode required.	Used in high-reliability industrial ballasts; adds layout complexity and BOM cost.	Select only when V_CEO > 600 V is mandated and diode integration is not critical.

Compared with ST13005D and BU508A, the ST13003DN uniquely balances 700 V capability, 2.5 µs storage time, and monolithic diode integration-making it optimal for cost-sensitive, space-constrained CFL ballasts operating at 30–50 kHz.

Availability

ST13003DN is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, electronic starter circuits, AC-DC auxiliary supplies, and snubberless inductive drivers requiring stable component supply and legacy-compatible packaging.

Supply support for ST13003DN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for industrial, automotive, and consumer markets.

The ST13003DN belongs to ST's high-voltage bipolar power transistor family, engineered specifically for energy-efficient lighting systems where fast switching, voltage ruggedness, and integration reduce system-level cost and size.

FAQ

Is ST13003DN still in active production?

No-ST13003DN is marked "Obsolete Product(s)" in its official datasheet (Doc ID 17186 Rev 1, February 2010). Aetrix Electronics maintains limited legacy stock with full traceability and offers engineering support for redesign alternatives including ST13005D and BU508A.

What is the maximum junction temperature and how does it affect thermal design?

The maximum operating junction temperature is 150 °C. With R_thJC = 6.25 °C/W and P_TOT = 20 W, the case temperature must be held ≤25 °C for safe operation-requiring either substantial heatsinking or derated power (e.g., 10 W at T_C = 87.5 °C) in enclosed CFL fixtures.

Can ST13003DN replace BU2508DF in CFL applications?

No-BU2508DF is a 1500 V NPN transistor with different pinout (TO-3P), higher V_CEO, and no integrated diode. ST13003DN's 700 V rating, SOT-32 footprint, and monolithic diode make it incompatible as a drop-in replacement; redesign of driver and snubber networks would be required.

Does the integrated diode share the same thermal path as the transistor junction?

Yes-the diode and transistor share the same silicon die and thermal mass. The 6.25 °C/W R_thJC applies to both elements; power dissipated in the diode (e.g., 350 mA × 1.5 V = 0.525 W) contributes directly to total junction temperature rise alongside transistor conduction and switching losses.

ST13003DN Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bag

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1.2V @ 330mA, 1A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 6 @ 500mA, 2V

Power - Max:: 20 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SOT-32-3

ST13003DN FAQ

1.How can I place an order for ST13003DN through Aetrix?

Please submit a Request for Quotation (RFQ) for ST13003DN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ST13003DN reliable?

The price and inventory of ST13003DN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ST13003DN is usually 5 days.

3.What payment methods are accepted for ST13003DN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ST13003DN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ST13003DN?

ST13003DN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ST13003DN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ST13003DN?

For technical support, including ST13003DN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ST13003DN requirements.

6.How does Aetrix verify that ST13003DN is sourced from the original manufacturer or authorized distributors?

All ST13003DN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ST13003DN meets industry standards.

7.What is the process for return or replacement of ST13003DN?

All ST13003DN units undergo pre-shipment inspection (PSI). If there is an issue with ST13003DN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ST13003DN part is unused and in its original packaging.

Return procedure for ST13003DN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…