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STMicroelectronics ST2310DHI

Part No.:
ST2310DHI
Manufacturer:
STMicroelectronics
Category:
Single Bipolar Transistors
Package:
ISOWATT-218-3
Datasheet:
AetrixST2310DHI.pdf
Description:
TRANS NPN 600V 12A ISOWATT-218
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,199

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Product details

Overview

ST2310DHI from STMicroelectronics is a high-voltage fast-switching NPN power transistor with integrated freewheeling diode, rated for 1500 V VCES, 12 A IC, and 55 W Ptot at Tc = 25 °C, designed for horizontal deflection circuits in high-end TVs.

For engineers reviewing the ST2310DHI datasheet, ST2310DHI pinout, ST2310DHI application, or ST2310DHI equivalent, key selection criteria include VCES > 1500 V, ts/tf ≤ 2.5/0.5 µs (inductive load), Rthj-case = 2.3 °C/W, integrated diode Vf = 1.5–2.2 V @ 7 A, and U.L.-compliant fully insulated ISOWATT218 package.

Technical Context

This device uses diffused collector technology to stabilize operation against base drive variations, minimizing worst-case power dissipation in high-repetition-rate horizontal deflection stages. Its tight hFE control (5.5–8.5 @ IC = 7 A) and low VCE(sat) = 3 V @ IC = 7 A / IB = 1.75 A ensure predictable switching behavior under dynamic load conditions.

The integrated freewheeling diode enables self-contained energy recirculation during flyback, eliminating external diode placement and reducing PCB layout complexity. Insulation withstand voltage of 2500 VRMS between all three leads and heatsink supports safe mounting without additional isolation hardware.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1500 V - Enables direct use in CRT horizontal output stages with peak flyback voltages exceeding 1200 V.
IC (continuous)12 A - Supports sustained current delivery for high-power deflection yoke drive without thermal runaway.
Ptot @ Tc = 25 °C55 W - Defines maximum steady-state power dissipation when mounted on heatsink at reference case temperature.
Rthj-case2.3 °C/W - Determines junction-to-heatsink thermal rise; critical for calculating safe operating area under pulsed loads.
ts/tf (inductive)2.5/0.5 µs - Fast storage and fall times reduce switching losses and EMI generation in 32 kHz horizontal scanning.
Vf (diode)1.5–2.2 V @ 7 A - Integrated diode forward drop directly impacts recirculation efficiency and thermal loading during flyback.
VBE(sat)1.1 V @ IC = 7 A / IB = 1.75 A - Low base-emitter saturation voltage reduces driver stage power loss and heat.

Pinout & Package

ST2310DHI uses the ISOWATT218 narrow-leads package - a fully insulated, U.L.-compliant power transistor housing with metal tab electrically isolated from emitter, collector, and base terminals. Mounting flange torque must not exceed 1 Nm; flatness tolerance ≤ 80 µm ensures uniform thermal contact.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control inputReceives base drive current (IB ≤ 7 A) to switch transistor; requires low-impedance driver due to hFE = 5.5–8.5.
2 (Collector)High-voltage power inputConnects to flyback transformer primary; withstands 1500 V transient spikes during horizontal retrace.
3 (Emitter)Power return & diode anodeServes as common emitter node and anode of integrated freewheeling diode; cathode connects internally to collector.

Key Features

FeatureDesign Value
Fully insulated package2500 VRMS insulation withstand between all leads and heatsink - eliminates need for mica washers or silicone pads.
Integrated freewheeling diodeVf = 1.5–2.2 V @ 7 A - Reduces component count and layout area while ensuring controlled energy recovery in inductive loads.
Tight hFE controlhFE = 5.5–8.5 @ IC = 7 A - Enables consistent base drive design across production lots without recalibration.
Diffused collector structureStabilizes operation vs. base drive variation - suppresses secondary breakdown risk under mismatched driver conditions.
Enhanced ruggednessSOA validated for inductive switching at 32 kHz - supports reliable operation in high-stress TV horizontal deflection applications.

Applications

High-End CRT Television Horizontal DeflectionIndustrial Flyback Power Converters

Use Scenario: Driving horizontal deflection yoke in 100+ Hz scan-rate CRT TVs with peak flyback voltages >1200 V.

IC Role / Device Role / Timing Role: Main switching transistor controlling yoke current ramp and flyback energy recovery.

Use Value: Integrated diode and 1500 V VCES eliminate external snubber components and reduce BOM count by one discrete part.

Use Scenario: High-voltage DC-DC conversion in industrial plasma generators and laser drivers requiring >1 kV isolation.

IC Role / Device Role / Timing Role: Primary-side switch in resonant flyback topology operating at 20–50 kHz.

Use Value: 2.3 °C/W Rthj-case and 55 W Ptot enable compact heatsinking in space-constrained enclosures.

Legacy Broadcast Video EquipmentHigh-Voltage Pulse Generators

Use Scenario: Horizontal output stage in professional broadcast monitors with extended lifetime requirements (>10,000 hrs).

IC Role / Device Role / Timing Role: High-reliability switching element handling repetitive 32 kHz pulses with tight timing margins.

Use Value: Tight hFE spread (5.5–8.5) ensures stable base drive design across full production batch without binning.

Use Scenario: Repetitive high-voltage pulse generation for scientific instrumentation and material testing.

IC Role / Device Role / Timing Role: Fast-turn-off switch triggering sub-microsecond pulses into capacitive loads.

Use Value: tf = 0.25–0.5 µs minimizes pulse tail distortion and improves edge fidelity in time-critical applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BU508AFVCES = 1500 V, but no integrated diode; Rthj-case = 2.5 °C/W; hFE min = 5, wider spread.Requires external freewheeling diode and larger heatsink; less suitable for compact TV designs.Preferred where diode independence or legacy footprint compatibility is required.
2SD2560VCES = 1300 V; tf = 0.4 µs; no U.L. insulation rating; Rthj-case = 2.7 °C/W.Limited to lower-voltage flyback systems; mounting requires additional isolation hardware.Cost-sensitive alternative where 1300 V rating suffices and certification is not mandated.

Compared with BU508AF and 2SD2560, ST2310DHI delivers superior integration (built-in diode + U.L. insulation), tighter gain control, and lower thermal resistance - making it optimal for space- and reliability-critical horizontal deflection stages where certification and layout simplicity are mandatory.

Availability

ST2310DHI is available at Aetrix Electronics and suitable for high-end CRT television manufacturing, industrial flyback converters, legacy broadcast equipment repair, and high-voltage pulse generator development requiring stable component supply and long-term obsolescence mitigation.

Supply support for ST2310DHI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power devices, microcontrollers, sensors, and automotive ICs.

The ST2310DHI belongs to ST's high-voltage bipolar transistor family engineered specifically for CRT horizontal deflection and industrial flyback applications demanding robustness, certified insulation, and integrated functionality.

FAQ

Is ST2310DHI still in active production?

No - ST2310DHI is marked "Obsolete Product(s)" in its official datasheet (dated April 2003). However, Aetrix Electronics maintains legacy inventory with full traceability and offers engineering support for continued use in maintenance, repair, and life-extension programs for installed CRT-based systems.

What is the maximum recommended mounting torque for the ISOWATT218 flange?

The datasheet specifies a recommended mounting torque of 0.8 Nm, with an absolute maximum of 1 Nm. Exceeding 1 Nm risks mechanical deformation of the insulated mounting surface or internal lead-frame stress, potentially compromising insulation integrity or thermal performance.

Can ST2310DHI replace BU2520DX in existing TV designs?

Not directly - BU2520DX has VCES = 1500 V and similar IC, but lacks integrated diode and U.L. insulation. Substitution would require adding an external diode and verifying creepage/clearance compliance, plus recalculating SOA margins due to differing Rthj-case (2.3 vs. 2.8 °C/W).

Does the integrated diode share the same thermal path as the transistor junction?

Yes - the diode is monolithically integrated within the same silicon die and shares the identical junction-to-case thermal path (Rthj-case = 2.3 °C/W). Total power dissipation must account for both transistor conduction losses and diode forward drop losses under combined duty cycles.

ST2310DHI Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
ISOWATT-218-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
12 A
Voltage - Collector Emitter Breakdown (Max):
600 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 1.75A, 7A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
5.5 @ 7A, 5V
Power - Max:
55 W
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ISOWATT-218

ST2310DHI FAQ

1.How can I place an order for ST2310DHI through Aetrix?

Please submit a Request for Quotation (RFQ) for ST2310DHI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ST2310DHI reliable?

The price and inventory of ST2310DHI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ST2310DHI is usually 5 days.

3.What payment methods are accepted for ST2310DHI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ST2310DHI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ST2310DHI?

ST2310DHI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ST2310DHI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ST2310DHI?

For technical support, including ST2310DHI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ST2310DHI requirements.

6.How does Aetrix verify that ST2310DHI is sourced from the original manufacturer or authorized distributors?

All ST2310DHI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ST2310DHI meets industry standards.

7.What is the process for return or replacement of ST2310DHI?

All ST2310DHI units undergo pre-shipment inspection (PSI). If there is an issue with ST2310DHI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ST2310DHI part is unused and in its original packaging.

Return procedure for ST2310DHI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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