STMicroelectronics ST9060C

Overview

ST9060C from STMicroelectronics is a 28/32 V common-source N-channel enhancement-mode lateral DMOS RF power transistor optimized for broadband commercial, avionics, and industrial amplifiers up to 1.5 GHz. It delivers 80 W output power at 945 MHz with 17.3 dB gain and 70% drain efficiency under 28 V, 300 mA quiescent bias, and 1.5 W input drive - suitable for Class A, AB, and C operation with all standard modulation formats.

For engineers reviewing the ST9060C datasheet, ST9060C pinout, ST9060C application, or ST9060C equivalent, key selection criteria include its 90 V V(BR)DSS rating, 0.75 °C/W junction-to-case thermal resistance, M243 hermetic package with integrated ESD protection (HBM Class 2), and verified load mismatch tolerance up to 20:1 VSWR across phase angles.

Technical Context

The ST9060C employs a lateral LDMOS structure enabling high-power RF amplification with excellent thermal stability and low thermal resistance. Its common-source configuration supports wideband impedance matching, and the device operates reliably up to 200 °C junction temperature with BeO-free packaging compliant with RoHS Directive 2002/95/EC.

At 945 MHz, it achieves stable large-signal performance with 73 pF input capacitance (CISS), 24 pF output capacitance (COSS), and 1.6 pF reverse transfer capacitance (CRSS). Impedance data shows ZIN = 0.90 – j1.2 Ω and ZDL = 3.2 + j1.5 Ω at 900 MHz - enabling precise matching network design for high-efficiency PA stages.

Key Specifications

Pinout & Package

The ST9060C is housed in the M243 (.230 × .360 inch) two-lead non-hermetic package with flange, featuring a metalized ceramic base for direct thermal mounting. The flange is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF101AN and PD85008, the ST9060C offers superior output power and efficiency at 945 MHz while maintaining identical M243 mechanical compatibility - making it optimal for space-constrained, thermally demanding UHF PA designs where 80 W and 70% efficiency are critical.

Availability

ST9060C is available at Aetrix Electronics and suitable for UHF base station transmitters, avionics communication amplifiers, and industrial RF heating generators requiring stable component supply and long-term lifecycle support.

Supply support for ST9060C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

The ST9060C belongs to ST's RF Power LDMOS transistor product line, engineered specifically for high-efficiency, high-reliability UHF amplification in commercial, avionics, and industrial environments up to 1.5 GHz.

FAQ

What is the maximum recommended gate voltage for ST9060C?

The absolute maximum gate-source voltage (VGS) is –10 V to +13 V. For reliable operation, the DC gate bias must remain within –5 V to +8 V during all conditions, including RF swing. Exceeding +8 V risks irreversible gate oxide damage, especially under high-temperature operation.

Can ST9060C be used in Class D or E switching amplifiers?

No - the ST9060C is characterized and qualified only for Class A, AB, and C linear amplification. Its lateral LDMOS structure lacks the fast turn-off capability and body diode characteristics required for hard-switching topologies like Class D or E, and no SOA data is provided for switching operation.

Is the M243 package lead-free compatible?

Yes - the M243 package uses lead-free terminations and complies with JEDEC J-STD-020 moisture sensitivity level 3. It supports standard Pb-free reflow profiles (peak 260 °C, 20 sec max), and the flange is designed for direct solder attachment to copper heatsinks using SnAgCu solder paste.

Does ST9060C require external gate protection diodes?

No - the device integrates HBM Class 2 ESD protection on the gate terminal, validated to withstand ≥2 kV per ANSI/ESDA/JEDEC JS-001. External gate protection is unnecessary in properly designed PCB layouts with controlled ESD handling, though transient suppression may still be advised in high-noise RF environments.