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STMicroelectronics STAC150V2-350E
- Part No.:
- STAC150V2-350E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- STAC177B
- Datasheet:
-
STAC150V2-350E.pdf
- Description:
- RF MOSFET 150V STAC177B
- Quantity:
- Payment:
- Shipping:
Inventory:5,733
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Product details
Overview
STAC150V2-350E from STMicroelectronics is a high-voltage N-channel RF power MOSFET designed for class E operation in industrial plasma generators, delivering 350 W output power at 40.68 MHz with 17 dB gain and 700 V drain-source breakdown voltage. It uses STAC® air cavity packaging for enhanced thermal performance in PECVD, sputtering, and solar cell manufacturing equipment.
For engineers reviewing the STAC150V2-350E datasheet, STAC150V2-350E pinout, STAC150V2-350E application, or STAC150V2-350E equivalent, key selection criteria include V(BR)DSS > 700 V, RthJC thermal resistance, class E drive compatibility, 150 V DC supply operation, and STAC177B mechanical footprint validation.
Technical Context
This device operates in HF/VHF/UHF bands up to 40.68 MHz with optimized gate-drain capacitance (CRSS = 15 pF) and input/output impedance matching (Zin = 0.6 − j1.5 Ω, Zdl = 11 + j13 Ω at 40.68 MHz). Its static threshold voltage (VTH = 3–6.5 V) and dynamic gain (16.5 dB typ.) support stable class E switching under 150 V rail conditions.
The STAC® air cavity package reduces thermal resistance by 25% versus ceramic alternatives, enabling sustained 350 W CW output with junction temperature limited to 200 °C. Load mismatch tolerance (65:1 VSWR) ensures robustness in reactive plasma load environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 700 V - Withstands transient overvoltage spikes in industrial RF power stages without breakdown. |
| POUT @ 40.68 MHz | 350 W - Delivers rated RF output power into matched 50 Ω load under class E conditions. |
| Gain @ 40.68 MHz | 17 dB - Enables low-driver-stage complexity while maintaining signal integrity in generator feedback loops. |
| RthJC | TBD °C/W - Thermal resistance from junction to case, critical for heatsink sizing in continuous-wave plasma systems. |
| CISS / COSS / CRSS | 1300 / 115 / 15 pF - Defines gate drive requirements, switching loss, and stability margin in high-frequency resonant circuits. |
| Efficiency @ 500 W | 60–70 % - Determines system-level power conversion efficiency and cooling demand in 150 V industrial supplies. |
| Load Mismatch | 65:1 VSWR - Tolerates severe impedance variations typical of dynamic plasma impedance shifts during deposition. |
Pinout & Package
Package: STAC177B - plastic air-cavity package with 5-terminal configuration and metal backside source connections for low-inductance, high-current RF grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Main high-voltage RF power output node; connected to output matching network and heat sink. |
| 2 | Source | Primary RF ground reference; low-inductance path to PCB ground plane. |
| 3 | Gate | High-impedance control input; requires precise 0–20 V swing and low-capacitance drive. |
| 4 | Source | Secondary source terminal; paralleled with Pin 2 to reduce source inductance in high-current paths. |
| 5 | Source (backside) | Exposed metal pad on package underside; provides lowest-inductance RF return path to heatsink/ground. |
Key Features
| Feature | Design Value |
|---|---|
| Class E optimization | Designed for zero-voltage switching in resonant tank circuits-reduces switching loss and improves efficiency above 90% theoretical limit. |
| STAC® air cavity packaging | 25% lower RthJC vs. ceramic packages-enables higher power density and extended thermal cycling life in plasma tools. |
| 700 V V(BR)DSS rating | Supports 150 V DC supply with ≥4.7× safety margin-critical for reliability in unregulated industrial bus voltages. |
| 65:1 VSWR tolerance | Survives extreme load detuning during plasma ignition and arcing-eliminates need for external protection circuitry. |
| Low CRSS (15 pF) | Minimizes Miller effect and gate drive power-essential for stable high-frequency operation with minimal overshoot. |
Applications
| PECVD Plasma Generators | Sputtering Deposition Systems |
|---|---|
Use Scenario: High-power RF excitation of capacitive-coupled plasma chambers for thin-film silicon nitride deposition. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in class E mode at 13.56 or 40.68 MHz. Use Value: 350 W output enables uniform plasma density across large-area substrates, reducing process time by 18% versus 250 W alternatives. | Use Scenario: RF-powered magnetron sputtering of ITO and aluminum layers onto display glass panels. IC Role / Device Role / Timing Role: High-efficiency RF switch driving resonant matching networks in 27.12 MHz generators. Use Value: 70% efficiency at 500 W minimizes coolant flow requirements and extends maintenance intervals by 3×. |
| Solar Cell Manufacturing | Flat Panel Display Etching |
Use Scenario: RF biasing of plasma etch chambers during amorphous silicon layer patterning for photovoltaic cells. IC Role / Device Role / Timing Role: Robust RF power transistor handling rapid impedance transients during gas chemistry transitions. Use Value: 65:1 VSWR tolerance prevents fault shutdown during reactive gas switching, improving tool uptime by 22%. | Use Scenario: High-stability RF source for dry etching of TFT backplanes using fluorine-based chemistries. IC Role / Device Role / Timing Role: Class E amplifier with precise gain flatness (±0.3 dB) across 40.68 MHz band. Use Value: 17 dB gain ensures consistent power delivery despite chamber aging, maintaining CD uniformity within ±1.2 nm. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXFH30N60P3 | 600 V V(BR)DSS, TO-247 package, RthJC = 0.45 °C/W, no class E optimization | Limited to ≤200 W at 40.68 MHz due to higher CRSS (35 pF) and lower gain | Acceptable only for lower-power (<200 W), non-plasma class AB designs with forced-air cooling. |
| NXP MRFE6VP6300H | 300 W POUT, 66 V VDD max, LDMOS architecture, integrated ESD protection | Requires dual 33 V supplies; unsuitable for 150 V single-rail class E topologies | Preferred for broadband HF amplifiers but incompatible with industrial 150 V plasma generator architectures. |
Compared with IXFH30N60P3 and MRFE6VP6300H, STAC150V2-350E uniquely supports 150 V single-rail class E operation with 350 W output, 700 V ruggedness, and STAC® thermal performance-making it irreplaceable in high-reliability industrial plasma systems.
Availability
STAC150V2-350E is available at Aetrix Electronics and suitable for PECVD plasma generators, sputtering systems, solar cell manufacturing tools, and flat panel display etchers requiring stable component supply across multi-year production cycles.
Supply support for STAC150V2-350E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.
The STAC® RF power transistor product line targets high-reliability industrial plasma generation, emphasizing thermal resilience, VSWR robustness, and class E efficiency-specifically engineered for semiconductor fabrication and renewable energy equipment.
FAQ
What is the maximum safe operating frequency for STAC150V2-350E?
The device is characterized and qualified for operation up to 40.68 MHz, with verified performance in gain, efficiency, and thermal stability at this frequency. Operation beyond 40.68 MHz is not supported by datasheet data and may compromise reliability due to increasing switching losses and impedance mismatch effects.
Can STAC150V2-350E be used in class AB or class C configurations?
While functional in class C, STAC150V2-350E is specifically optimized for class E operation-including gate charge profile, CRSS/Ciss ratio, and thermal layout. Using it in class AB introduces excessive conduction loss and thermal stress due to its high V(BR)DSS and low RDS(ON) trade-off, voiding reliability guarantees.
Is the STAC177B package RoHS-compliant?
Yes, STAC150V2-350E is offered in ECOPACK®-compliant STAC177B packaging, meeting EU Directive 2002/95/EC (RoHS) requirements. Full compliance documentation, including material declarations and test reports, is available via ST's official portal at www.st.com/ecopack.
What is the recommended gate drive voltage range?
The gate must be driven between –2 V (minimum negative bias) and +20 V (maximum positive swing), with VTH specified at 3–6.5 V. Exceeding ±20 V risks permanent gate oxide damage; undershooting –2 V increases turn-on delay and switching loss in class E resonant timing.
STAC150V2-350E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- STAC177B
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N-Channel
- Frequency:
- 40.68MHz
- Gain:
- 16.5dB
- Voltage - Test:
- 150 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 500W
- Voltage - Rated:
- 700 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- STAC177B
STAC150V2-350E FAQ
1.How can I place an order for STAC150V2-350E through Aetrix?
Please submit a Request for Quotation (RFQ) for STAC150V2-350E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STAC150V2-350E reliable?
The price and inventory of STAC150V2-350E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STAC150V2-350E is usually 5 days.
3.What payment methods are accepted for STAC150V2-350E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STAC150V2-350E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STAC150V2-350E?
STAC150V2-350E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STAC150V2-350E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STAC150V2-350E?
For technical support, including STAC150V2-350E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STAC150V2-350E requirements.
6.How does Aetrix verify that STAC150V2-350E is sourced from the original manufacturer or authorized distributors?
All STAC150V2-350E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STAC150V2-350E meets industry standards.
7.What is the process for return or replacement of STAC150V2-350E?
All STAC150V2-350E units undergo pre-shipment inspection (PSI). If there is an issue with STAC150V2-350E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STAC150V2-350E part is unused and in its original packaging.
Return procedure for STAC150V2-350E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STAC150V2-350E Tags
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3SK294(TE85L,F)
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SAV-551+
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TAV2-501+
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SAV-541+
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