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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics STB13007DT4

Name: STB13007DT4
Brand: STMicroelectronics
SKU: STB13007DT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB13007DT4

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB13007DT4.pdf

Description:: TRANS NPN 400V 8A D2PAK

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Product details

Overview

STB13007DT4 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in D²PAK (TO-263) package, rated for V_CEO = 400 V, I_C = 8 A, and P_TOT = 80 W at T_C = 25 °C, with integrated freewheeling diode and characterized up to 125 °C. It delivers t_f = 90–150 ns and t_s = 1.7–2.2 µs under inductive switching, enabling use in electronic ballasts and SMPS primary-side switching stages.

For engineers reviewing the STB13007DT4 datasheet, STB13007DT4 pinout, STB13007DT4 application, or STB13007DT4 equivalent, key selection criteria include V_CEO ≥ 400 V, R_BSOA robustness under inductive loads, V_CE(sat) ≤ 1.5 V at I_C = 5 A, thermal resistance R_thJC = 1.56 °C/W, and guaranteed operation at T_J = 150 °C.

Technical Context

This device employs multi-epitaxial planar technology with cellular emitter structure and planar edge termination to simultaneously achieve high voltage blocking (V_CEO = 400 V), fast switching (t_f ≤ 150 ns), and wide reverse-biased safe operating area (RBSOA). Its integrated freewheeling diode supports self-contained inductive load commutation.

Electrical behavior is fully characterized at 125 °C - including V_CE(sat) up to 3 V and h_FE down to 8 at I_C = 5 A - ensuring design margin for thermally stressed SMPS and lighting applications where junction temperature routinely exceeds 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Sustains full-rated collector-emitter voltage with zero base current, enabling direct replacement of legacy 400 V transistors in flyback/forward converters.
I_C	8 A continuous - Supports ≥100 W output power in single-ended SMPS topologies with adequate heatsinking.
R_thJC	1.56 °C/W - Enables 51.3 °C/W effective thermal rise per watt at case, critical for compact PCB-mounted heatsink designs.
t_f	90–150 ns - Limits switching loss during turn-off in 20–100 kHz SMPS, reducing MOSFET-like gate drive demands.
V_CE(sat)	1.5 V @ I_C = 5 A, I_B = 1 A - Delivers <1.25 W conduction loss at 5 A, easing thermal management vs. higher-saturation alternatives.
h_FE	8–25 @ I_C = 5 A - Dictates minimum base drive current (≥200 mA) for full saturation, informing driver stage sizing.
V_f (diode)	2.5 V @ I_C = 3 A - Specifies forward drop of integrated freewheeling diode, directly impacting efficiency in discontinuous-mode operation.

Pinout & Package

Package: D²PAK (TO-263) - surface-mount, single-ended power package with exposed drain tab (pin 3/TAB) for low-inductance thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Low-impedance control input requiring ≥200 mA peak drive for full saturation at 5 A collector current.
2 (C)	Collector	Main high-voltage power terminal; connected internally to TAB in standard configuration for low-inductance high-current path.
3 / TAB (E)	Emitter	Emitter terminal and mechanical mounting surface; electrically isolated from PCB ground unless explicitly soldered to thermal pad.

Key Features

Feature	Design Value
Integrated freewheeling diode	Eliminates need for external catch diode in flyback/inductive load circuits, reducing BOM count and layout area by ~30%.
Wide RBSOA	Supports reliable operation under inductive switching stress without snubber networks, verified up to V_Clamp = 250 V and L = 200 µH.
High-voltage capability (V_CEO = 400 V)	Enables direct use in universal-input (85–265 V_AC) SMPS without series stacking or derating.
Characterized at 125 °C	Guarantees parametric performance (h_FE, V_CE(sat), t_s) at elevated junction temperatures common in enclosed lighting fixtures.
Low dynamic parameter spread	Ensures consistent switching timing and gain across production lots, simplifying production calibration and reducing test escapes.

Applications

Electronic Ballast Control

SMPS Primary Switch

Use Scenario: Driving resonant LC tank in instant-start fluorescent lamp ballasts operating at 20–60 kHz.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling lamp current via half-bridge topology with integrated diode enabling self-commutated dead-time recovery.

Use Value: Eliminates discrete diode, reduces EMI from parasitic ringing, and maintains stable ignition across line voltage variations due to tight h_FE and V_CE(sat) lot control.

Use Scenario: Main switching element in 60–100 W offline flyback converter powering industrial sensors.

IC Role / Device Role / Timing Role: Primary-side power switch turning on/off transformer primary winding; operates in discontinuous conduction mode with V_CE clamped to 250 V.

Use Value: RBSOA robustness prevents secondary breakdown during overload, while 1.56 °C/W R_thJC allows 70 °C max case temperature with minimal heatsink.

Inductive Load Driver

DC-DC Converter Stage

Use Scenario: Controlling solenoid valves in HVAC actuators with 24 V DC supply and 500 ms pulse duration.

IC Role / Device Role / Timing Role: High-current, high-voltage switch managing inductive energy recovery via integrated diode during turn-off.

Use Value: ts ≤ 2.2 µs and tf ≤ 150 ns minimize voltage overshoot, eliminating need for TVS clamping and reducing system cost by $0.18/unit.

Use Scenario: Step-down switching transistor in 48 V to 12 V telecom DC-DC module with 50 kHz switching frequency.

IC Role / Device Role / Timing Role: Power transistor in non-isolated buck converter; handles 8 A peak inductor current with forced-air cooling.

Use Value: V_CE(sat) ≤ 1.5 V at 5 A ensures <7.5 W conduction loss, enabling >92% efficiency at full load without liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB13007	Same die, TO-220 package; R_thJC = 2.5 °C/W; no tape-and-reel option.	Limited to through-hole assembly; unsuitable for automated SMT lines or space-constrained layouts.	Select when manual assembly or legacy board compatibility is required; avoid for new SMT designs.
BU508A	V_CEO = 1000 V but h_FE = 5–15; t_f = 300 ns; no integrated diode.	Higher voltage margin but slower switching and requires external diode, increasing layout complexity and losses.	Choose only for ultra-high-voltage (>600 V) applications where speed and integration are secondary.

Compared with STB13007DT4, STB13007 trades SMT compatibility for simpler thermal interface, while BU508A sacrifices speed and integration for extreme voltage headroom - making STB13007DT4 optimal for cost-sensitive, high-volume 400 V SMPS and lighting where RBSOA and diode integration are decisive.

Availability

STB13007DT4 is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and industrial inductive load drivers requiring stable component supply, RoHS-compliant packaging, and traceable lot-level thermal characterization.

Supply support for STB13007DT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

STB13007DT4 belongs to ST's high-voltage bipolar power transistor product line, engineered specifically for reliability-critical lighting and power conversion applications demanding wide RBSOA, high-temperature operation, and integrated diode functionality.

FAQ

What is the maximum recommended junction temperature for continuous operation?

The STB13007DT4 is rated for maximum operating junction temperature of 150 °C, with all electrical characteristics fully characterized at 125 °C. Operation at 150 °C requires thermal design ensuring T_J does not exceed this limit under worst-case ambient and power dissipation conditions, using R_thJC = 1.56 °C/W and R_thJA = 62.5 °C/W as boundary constraints.

Does the integrated diode share the same thermal path as the transistor junction?

Yes - the freewheeling diode is monolithically integrated into the same silicon die and shares the identical thermal path to the case. Its forward voltage (V_f = 2.5 V @ 3 A) and thermal resistance are co-validated with transistor parameters, meaning diode self-heating directly contributes to total junction temperature rise.

Can STB13007DT4 replace MOSFETs in 100 kHz SMPS designs?

It can replace lower-speed MOSFETs in 20–60 kHz flyback or forward converters, but its 150 ns fall time and 2.2 µs storage time limit practical use above 80 kHz. At 100 kHz, switching losses increase significantly versus modern superjunction MOSFETs; base drive requirements also demand higher current than typical MOSFET gate drivers.

Is the D²PAK package lead-free and RoHS-compliant?

Yes - STB13007DT4 is supplied in ECOPACK2-compliant D²PAK packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device uses matte tin plating on leads and lead-free solderability is verified per J-STD-020, with peak reflow temperature tolerance up to 260 °C.

STB13007DT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 1A, 5A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 8 @ 5A, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB13007DT4 FAQ

1.How can I place an order for STB13007DT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB13007DT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB13007DT4 reliable?

The price and inventory of STB13007DT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB13007DT4 is usually 5 days.

3.What payment methods are accepted for STB13007DT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB13007DT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB13007DT4?

STB13007DT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB13007DT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB13007DT4?

For technical support, including STB13007DT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB13007DT4 requirements.

6.How does Aetrix verify that STB13007DT4 is sourced from the original manufacturer or authorized distributors?

All STB13007DT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB13007DT4 meets industry standards.

7.What is the process for return or replacement of STB13007DT4?

All STB13007DT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB13007DT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB13007DT4 part is unused and in its original packaging.

Return procedure for STB13007DT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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