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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics STBV45G-AP

Name: STBV45G-AP
Brand: STMicroelectronics
SKU: STBV45G-AP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STBV45G-AP

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: STBV45G-AP.pdf

Description:: TRANS NPN 400V 0.75A TO-92AP

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Product details

Overview

STBV45G-AP from STMicroelectronics is a high-voltage fast-switching NPN power transistor in TO-92AP package, rated for V_CEO = 400 V, I_C = 0.75 A, and switching fall time t_f = 0.3 µs under inductive load conditions. It employs multi-epitaxial planar technology with cellular emitter structure and planar edge termination to sustain wide RBSOA while enabling rapid switching. It is used in compact fluorescent lamp (CFL) ballasts and low-power SMPS battery chargers.

For engineers reviewing the STBV45G-AP datasheet, STBV45G-AP pinout, STBV45G-AP application, or STBV45G-AP equivalent, key selection criteria include its 400 V collector-emitter sustaining voltage, 0.3 µs inductive fall time, 0.95 W total dissipation at T_c = 25 °C, TO-92AP mechanical compatibility, and halogen-free ECOPACK® compliance for CFL and battery charger designs.

Technical Context

This device is optimized for high-voltage, medium-current switching in resonant and inductive-load topologies. Its planar edge termination and cellular emitter design jointly enable stable operation across wide safe operating area (RBSOA) while achieving sub-microsecond switching transitions.

The transistor supports pulsed collector currents up to 1.5 A (t_P < 5 ms), operates up to 150 °C junction temperature, and exhibits DC current gain h_FE = 10–20 at I_C = 0.2 A / V_CE = 5 V - confirming suitability for base-driven hard-switching applications requiring predictable gain and low saturation voltage.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Sustains 400 V collector-emitter voltage with zero base current, enabling use in 230 VAC-fed CFL ballast circuits without snubber overdesign.
t_f	0.3 µs - Measured fall time under 3 mH inductive load with V_clamp = 300 V, supporting >1 MHz switching in resonant converters.
I_C	0.75 A continuous - Supports output power up to ~30 W in self-oscillating CFL drivers and low-power AC/DC adapters.
V_CE(sat)	0.3 V @ I_C = 0.3 A, I_B = 75 mA - Low saturation voltage minimizes conduction loss and thermal stress in linear-regulated or quasi-resonant stages.
R_thj-case	131.6 °C/W - Thermal resistance enables 0.95 W dissipation at case temperature ≤25 °C, limiting junction rise to <125 °C in typical PCB-mount configurations.
h_FE	10–20 @ I_C = 0.2 A - Stable DC gain range ensures reliable base drive sizing for discrete oscillator and driver circuits.

Pinout & Package

STBV45G-AP is housed in TO-92AP package - a variant of TO-92 with modified lead pitch and orientation optimized for ammopack tape-and-reel automated assembly. Dimensions conform to ST's mechanical drawing 0050910S, including lead spacing P0 = 12.7 mm and body width W = 18.0 mm.

Pin/Terminal	Circuit Role	Design Meaning
E (Emitter)	Current sink terminal	Connected to ground or low-side return path; must handle full load current and support fast turn-off via active base pull-down.
B (Base)	Control input	Receives current-limited drive signal; requires ≥75 mA peak for full saturation at 0.3 A collector current.
C (Collector)	High-voltage switch node	Connects to primary winding of flyback or resonant transformer; withstands 400 V sustained and 700 V transient (V_CES).

Key Features

Feature	Design Value
Cellular emitter + planar edge termination	Enables simultaneous high-voltage blocking (400 V) and fast switching (0.3 µs fall time) without compromising RBSOA margin.
Halogen-free ECOPACK® molding compound	Meets RoHS and JEDEC JESD97 requirements; eliminates brominated flame retardants while maintaining thermal and mechanical reliability.
Low lot-to-lot dynamic parameter spread	Ensures consistent t_f, V_CE(sat), and h_FE across production batches - critical for mass-produced CFL ballast calibration.
TO-92AP ammopack packaging	Supports high-speed pick-and-place placement with standardized tape pitch (P0 = 12.7 mm), reducing assembly cost vs. bulk TO-92.

Applications

Compact Fluorescent Lamp (CFL) Ballast

Low-Power SMPS Battery Charger

Use Scenario: Drives resonant LC tank in self-oscillating CFL electronic ballast operating from 220–240 VAC mains.

IC Role / Device Role / Timing Role: NPN power switch controlling primary current in half-bridge or single-ended topology; defines oscillation frequency via external timing components.

Use Value: 0.3 µs fall time and 400 V V_CEO allow efficient zero-voltage switching (ZVS) initiation and reduce EMI generation in 20–60 kHz ballast operation.

Use Scenario: Acts as main switching transistor in 5–15 W flyback converter for USB charging adapters.

IC Role / Device Role / Timing Role: High-voltage switch in primary side; turns on/off under PWM or self-oscillating control to regulate output voltage via optocoupler feedback.

Use Value: 0.95 W power dissipation and 131.6 °C/W thermal resistance permit operation without heatsink in enclosed plastic housings at ambient ≤40 °C.

LED Driver with Boost Topology

DC-DC Converter for Industrial Sensors

Use Scenario: Switches boost inductor in constant-current LED driver for streetlight modules powered from 12–48 VDC bus.

IC Role / Device Role / Timing Role: Medium-voltage NPN switch handling up to 400 V output swing; driven by dedicated gate driver IC or discrete transistor stage.

Use Value: Wide RBSOA and 1.5 A pulsed current rating support robust operation during LED string open-circuit transients and line surges.

Use Scenario: Powers isolated sensor interface circuitry in 24 V industrial PLC I/O modules requiring 5 V/3.3 V auxiliary rails.

IC Role / Device Role / Timing Role: Primary-side switch in miniature flyback transformer-based isolated DC-DC converter; operates at fixed 50–100 kHz.

Use Value: Consistent h_FE (10–20) and low V_CE(sat) (≤0.3 V) ensure stable regulation and <±3% output tolerance across temperature and load variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB120N4F7	MOSFET (40 V V_DS, 120 A I_D) - incompatible voltage rating; not a direct replacement.	Designed for low-voltage motor control, not HV switching.	Select only if redesigning for logic-level gate drive and lower voltage (<60 V) topologies.
BU2520DX	Higher V_CEO = 1500 V, slower t_f = 1.2 µs, TO-220FP package - larger footprint and higher thermal mass.	Used in CRT flyback and high-power lighting where voltage margin >1 kV is mandatory.	Choose when absolute voltage safety margin outweighs switching speed and board space constraints.

Compared with BU2520DX, STBV45G-AP offers 4× faster switching and 30% smaller footprint but trades 1100 V voltage headroom for CFL/SMPS optimization; versus STB120N4F7, it provides correct voltage class but requires base current drive instead of gate voltage control.

Availability

STBV45G-AP is available at Aetrix Electronics and suitable for compact fluorescent lamp (CFL) ballasts, low-power SMPS battery chargers, and industrial DC-DC converters requiring stable component supply and halogen-free compliance.

Supply support for STBV45G-AP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

STBV45G-AP belongs to ST's high-voltage bipolar transistor product line, engineered specifically for energy-efficient lighting and low-to-medium power AC/DC conversion where fast switching, rugged RBSOA, and environmental compliance are critical.

FAQ

What is the maximum safe operating voltage for STBV45G-AP in continuous conduction mode?

The STBV45G-AP is rated for V_CEO = 400 V with I_B = 0, meaning it safely blocks 400 V between collector and emitter under zero-base-current conditions. For reliable long-term operation, design margins should limit steady-state V_CE to ≤320 V to accommodate transients and temperature derating per Figure 3's derating curve.

Can STBV45G-AP replace STBV45G in existing TO-92 bulk designs?

No - STBV45G-AP uses TO-92AP packaging with different lead pitch (P0 = 12.7 mm) and orientation than standard TO-92 (P0 = 12.7 mm but differing F1/F2/F3 dimensions). Mechanical incompatibility prevents direct PCB footprint reuse; layout revision is required for ammopack assembly.

Is STBV45G-AP suitable for automotive applications?

No - STBV45G-AP is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation above 125 °C. ST explicitly states non-automotive use in its disclaimer; it is intended for industrial and consumer lighting/charger applications only.

Does STBV45G-AP require a base resistor in all operating conditions?

Yes - as a bipolar junction transistor, STBV45G-AP requires externally controlled base current to achieve saturation. With I_C = 0.3 A, minimum I_B = 75 mA is needed (h_FE min ≈ 4). A series base resistor sized for driver voltage and current capability is mandatory; omission risks thermal runaway or incomplete turn-on.

STBV45G-AP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 750 mA

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 135mA, 400mA

Current - Collector Cutoff (Max):: 250µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 5 @ 400mA, 5V

Power - Max:: 950 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92AP

STBV45G-AP FAQ

1.How can I place an order for STBV45G-AP through Aetrix?

Please submit a Request for Quotation (RFQ) for STBV45G-AP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STBV45G-AP reliable?

The price and inventory of STBV45G-AP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STBV45G-AP is usually 5 days.

3.What payment methods are accepted for STBV45G-AP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STBV45G-AP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STBV45G-AP?

STBV45G-AP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STBV45G-AP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STBV45G-AP?

For technical support, including STBV45G-AP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STBV45G-AP requirements.

6.How does Aetrix verify that STBV45G-AP is sourced from the original manufacturer or authorized distributors?

All STBV45G-AP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STBV45G-AP meets industry standards.

7.What is the process for return or replacement of STBV45G-AP?

All STBV45G-AP units undergo pre-shipment inspection (PSI). If there is an issue with STBV45G-AP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STBV45G-AP part is unused and in its original packaging.

Return procedure for STBV45G-AP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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