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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Current Regulation/Management

STMicroelectronics STEF12SPUR

Name: STEF12SPUR
Brand: STMicroelectronics
SKU: STEF12SPUR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STEF12SPUR

Manufacturer:: STMicroelectronics

Category:: Current Regulation/Management

Package:: 10-VFDFN Exposed Pad

Datasheet:: STEF12SPUR.pdf

Description:: IC ELECTRONIC FUSE 10DFN

Quantity:: RFQ Add To RFQ list

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Inventory:2,104

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Product details

Overview

STEF12SPUR from STMicroelectronics is a programmable electronic fuse (eFuse) for 12 V DC power rails, featuring adjustable current limit (4.6 A overload / 2.4 A short-circuit at RLim = 22 Ω), 15 V typical output overvoltage clamp, integrated 40 mΩ N-channel Power FET, and reverse current blocking via dedicated VG gate driver pin - optimized for hot-swap protection in SSD/HDD drives and storage arrays.

For engineers reviewing the STEF12SPUR datasheet, STEF12SPUR pinout, STEF12SPUR application, or STEF12SPUR equivalent, this device delivers precise fault response with thermal shutdown (165 °C), UVLO (8.5 V typ.), soft-start slew-rate control, and DFN10 package–specific reverse-current blocking - critical for reliable power sequencing in data-storage and hot-plug systems.

Technical Context

The STEF12SPUR implements an integrated N-channel MOSFET with adjustable current limiting via external RLim resistor, real-time overvoltage clamping using internal voltage regulation, and dual-mode fault signaling (latch behavior). Its dV/dt control circuit enables programmable output ramp-up (0.85 ms base, extendable with external capacitor), while the VG pin actively sinks gate charge to disable an external reverse-blocking FET during input voltage loss.

Thermal protection operates independently of current/voltage faults: junction temperature exceeding 165 °C triggers immediate FET turn-off and EN/Fault pin transition to intermediate voltage (1.3 V typ.) for latch-mode reporting. UVLO prevents operation below 7.7 V, with 0.8 V hysteresis, ensuring stable startup only within valid 10–13.8 V operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CLAMP	15 V typical - regulates output during input overvoltage to prevent downstream damage without external components
R_DS(on)	40 mΩ at T_J = 25 °C - limits conduction loss to ≤48 mV drop at 1.2 A, enabling high-efficiency 12 V rail protection
I_LIM / I_SHORT	4.6 A / 2.4 A at RLim = 22 Ω - user-configurable current thresholds ensure precise load matching without derating
T_SHDN	165 °C with 20 °C hysteresis - thermal cutoff protects against sustained overload or poor PCB heatsinking
V_UVLO	8.5 V typ. with 0.8 V hysteresis - prevents erratic operation during brownout or weak 12 V supply conditions
dV/dt ramp time	0.85 ms (10%→90% V_OUT) - controls inrush current to <10 A peak during hot-swap insertion
V_G drive capability	5 V gate-source swing referenced to V_OUT - directly drives standard N-channel MOSFETs for reverse-current blocking

Pinout & Package

STEF12SPUR is available in DFN10 (3×3 mm, 0.5 mm pitch) package with exposed thermal pad. This package supports higher power dissipation (R_thJA = 53 °C/W) and includes the VG pin for reverse-current blocking - unavailable in TSOT23-8L variant.

Pin/Terminal	Circuit Role	Design Meaning
ILim	Current limit programming node	Connects to external RLim resistor (15.4–300 Ω) to set precise overload/short-circuit thresholds
En/Fault	Tri-state enable/fault status interface	Float for auto-enable; pull low to disable; outputs 1.3 V during thermal fault for system monitoring
dV/dt	Soft-start timing control	Internal 0.85 ms ramp; add external capacitor to extend ramp time linearly (e.g., 100 pF → ~3 ms)
GND	Reference ground	Common return for all internal circuits and external capacitors (C_IN, C_OUT, C_dv/dt)
VCC	Main power input	Accepts 10–13.8 V nominal; absolute max 25 V - powers internal charge pump and gate driver
VOUT / Source	Output terminal & MOSFET source	Delivers protected 12 V output; connects to load and RLim resistor return path
VG	External FET gate driver	Sources 30 µA to charge external N-MOS gate; actively sinks current to turn off FET during VIN loss

Key Features

Feature	Design Value
Reverse current blocking control	Dedicated VG pin enables fast turn-off of external N-MOS during input brownout - preserves SSD write integrity
Programmable current limit	RLim resistor sets both overload (I_LIM) and short-circuit (I_SHORT) thresholds independently per datasheet curves
Overvoltage clamping	15 V regulated output during input surges up to 25 V - eliminates need for external TVS on protected rail
Thermal fault signaling	EN/Fault pin asserts 1.3 V intermediate level - allows direct connection to MCU GPIO for non-intrusive monitoring
Adjustable soft-start	dV/dt pin accepts 0–1000 pF capacitor to scale ramp time from 0.85 ms to 22 ms - matches diverse load capacitance

Applications

SSD Power Sequencing

HDD Hot-Swap Module

Use Scenario: Insertion of M.2 NVMe SSD into powered backplane with 12 V rail active.

IC Role / Device Role / Timing Role: eFuse placed in series with 12 V supply to SSD controller and NAND flash; provides controlled ramp-up and reverse-current blocking during partial insertion.

Use Value: Prevents bus contention and data corruption by blocking reverse current when host 12 V drops before SSD capacitors discharge - enabled by VG-driven external FET.

Use Scenario: Replacement of 3.5" HDD in enterprise storage array without powering down entire chassis.

IC Role / Device Role / Timing Role: Series protection on 12 V motor + logic rail; detects inrush from spindle motor startup and clamps transients from cable inductance.

Use Value: Limits peak inrush to ≤2.4 A via short-circuit current limit, avoiding false tripping during motor spin-up while maintaining 15 V clamp for ±10% input variation.

RAID Controller Board

Industrial Hot-Plug Backplane

Use Scenario: 12 V distribution across multiple SAS/SATA drive slots with independent fault isolation.

IC Role / Device Role / Timing Role: One STEF12SPUR per slot; EN/Fault pins wired in parallel to trigger simultaneous shutdown during thermal event across all drives.

Use Value: Enables coordinated thermal response - single fault disables all connected drives, preventing cascading failure in dense RAID enclosures.

Use Scenario: Modular I/O card insertion into industrial PLC backplane with 12 V auxiliary power.

IC Role / Device Role / Timing Role: Input-side eFuse with UVLO (8.5 V) and 0.85 ms soft-start ensures clean power delivery despite contact bounce and long trace inductance.

Use Value: Eliminates voltage spikes >16.2 V on downstream FPGA/CPLD supplies via clamping, and avoids reset glitches via controlled dV/dt ramp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar eFuse applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STEF12SGR	Higher current rating: 5.5 A overload / 2.8 A short-circuit at same RLim = 22 Ω; identical pinout and features except no VG pin	Lacks reverse-current blocking - unsuitable where load-side energy retention (e.g., SSD write cache) is required during input loss	Select STEF12SGR only for simpler 12 V rail protection without reverse-current requirements; use STEF12SPUR when VG-controlled external FET is needed
TCKE805M2200	Lower R_DS(on) (18 mΩ), fixed 5.5 A current limit, no dV/dt control or overvoltage clamp; requires external UVLO and TVS	Designed for telecom DC-DC output stages - lacks integrated protection features needed for storage hot-swap	Choose TCKE805M2200 only for cost-sensitive, high-current, low-feature applications where external protection is already present

Compared with STEF12SGR and TCKE805M2200, STEF12SPUR uniquely combines reverse-current blocking (VG pin), programmable current limit, and 15 V overvoltage clamping in a single DFN10 package - making it the only option for robust, self-contained 12 V hot-swap protection in data-storage systems.

Availability

STEF12SPUR is available at Aetrix Electronics and suitable for SSD power sequencing, HDD hot-swap modules, and industrial hot-plug backplanes requiring stable component supply, full lifecycle support, and traceable sourcing.

Supply support for STEF12SPUR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, and automotive ICs with broad industrial and computing portfolio coverage.

The STEF12SPUR belongs to ST's eFuse family designed specifically for high-reliability 12 V power rail protection in data-center storage and enterprise computing - emphasizing fault visibility, reverse-current control, and seamless hot-swap integration.

FAQ

What is the function of the VG pin on STEF12SPUR?

The VG pin is a dedicated gate driver output that controls an external N-channel MOSFET for reverse-current blocking. During normal operation, it sources current to turn on the FET; when input voltage drops below UVLO or during fault, it actively sinks gate charge to rapidly turn off the FET - preventing reverse current flow from load to source during power loss. This feature is exclusive to the DFN10 package and absent in TSOT23-8L variants.

How do I configure the current limit for STEF12SPUR?

Configure current limit by connecting an external resistor (RLim) between the ILim pin and VOUT/Source. For example, a 22 Ω resistor sets overload limit to 4.6 A and short-circuit limit to 2.4 A. RLim values from 15.4 Ω to 300 Ω are supported, with corresponding I_LIM/I_SHORT values documented in Table 8 of DS13002. The resistor must be placed close to the ILim pin with minimal trace length to avoid accuracy degradation from parasitic inductance.

Does STEF12SPUR require input and output capacitors?

Yes - C_IN ≥1 µF and C_OUT ≥1 µF are mandatory for stability and transient suppression. C_IN must be placed adjacent to VCC/GND to dampen positive voltage spikes caused by input inductance during current interruption; C_OUT mitigates negative spikes at VOUT. Ceramic capacitors are recommended, and for long input traces (>10 cm), C_IN should be increased. Failure to include these capacitors risks oscillation, false fault triggering, or device damage from inductive kickback.

What happens during an overvoltage event on the STEF12SPUR input?

When input voltage exceeds the V_CLAMP threshold (~15 V), STEF12SPUR enters regulation mode, holding V_OUT at ≤16.2 V (max) while dissipating excess power in its internal MOSFET. Prolonged overvoltage causes rising junction temperature; if thermal shutdown (165 °C) is reached, the FET turns off and EN/Fault pin transitions to 1.3 V to signal the fault. Recovery requires cycling VCC or pulling EN/Fault low then releasing - no autoretry occurs in the latch-version STEF12SPUR.

STEF12SPUR Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 10-VFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Function:: Electronic Fuse

Sensing Method:: -

Accuracy:: -

Voltage - Input:: 10V ~ 13.8V

Current - Output:: 3.5A

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 10-DFN (3x3)

STEF12SPUR FAQ

1.How can I place an order for STEF12SPUR through Aetrix?

Please submit a Request for Quotation (RFQ) for STEF12SPUR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STEF12SPUR reliable?

The price and inventory of STEF12SPUR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STEF12SPUR is usually 5 days.

3.What payment methods are accepted for STEF12SPUR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STEF12SPUR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STEF12SPUR?

STEF12SPUR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STEF12SPUR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STEF12SPUR?

For technical support, including STEF12SPUR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STEF12SPUR requirements.

6.How does Aetrix verify that STEF12SPUR is sourced from the original manufacturer or authorized distributors?

All STEF12SPUR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STEF12SPUR meets industry standards.

7.What is the process for return or replacement of STEF12SPUR?

All STEF12SPUR units undergo pre-shipment inspection (PSI). If there is an issue with STEF12SPUR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STEF12SPUR part is unused and in its original packaging.

Return procedure for STEF12SPUR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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