STMicroelectronics STEVAL-TDR027V1

Overview

STEVAL-TDR027V1 from STMicroelectronics is a portable UHF 2-way radio demonstration board built around the PD84008L-E LDMOS RF power transistor, operating from 380–512 MHz with >6 W output power at 7.2 V supply, 11.7 ± 0.5 dB gain, and 46–71% efficiency-designed for rapid evaluation of high-power RF amplifier performance in land-mobile radio systems.

For engineers reviewing the STEVAL-TDR027V1 datasheet, STEVAL-TDR027V1 pinout, STEVAL-TDR027V1 application, or STEVAL-TDR027V1 equivalent, this board serves as a validated test platform for UHF RF power stage characterization, impedance matching verification, harmonic suppression analysis, and load mismatch resilience testing under real-world 2-way radio operating conditions.

Technical Context

The board implements a single-stage Class AB RF power amplifier using the PD84008L-E LDMOS device, biased at 200 mA quiescent drain current with fixed 7.2 V DC supply. Input and output matching networks are realized with discrete ATC/Coilcraft/Murata components and controlled-impedance microstrip lines on FR-4 (60 mil, 2 oz Cu).

It supports full-frequency-band characterization across 380–512 MHz, delivering measured harmonic suppression of –38 to –70 dBc (2nd) and –60 to –70 dBc (3rd) at 27 dBm input, with VSWR tolerance up to 20:1 under full 6 W output-enabling robust evaluation of amplifier stability and ruggedness in mismatched antenna environments.

Key Specifications

Availability

STEVAL-TDR027V1 is available at Aetrix Electronics and suitable for UHF two-way radio development, RF power amplifier validation, and land-mobile communications system prototyping requiring stable component supply and traceable reference hardware.

Supply support for STEVAL-TDR027V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, analog ICs, power transistors, and embedded solutions for industrial, automotive, and communication applications.

This board belongs to ST's STEVAL (ST Evaluation) series-engineered specifically to accelerate RF power device adoption by providing fully characterized, application-ready reference platforms with documented schematics, layout, and measurement data.

FAQ

What RF transistor is used on the STEVAL-TDR027V1 board?

The board integrates the PD84008L-E, a 12.5 W LDMOS RF power transistor from STMicroelectronics, optimized for UHF operation (380–512 MHz) with BeO-free ceramic packaging, 7.2 V supply compatibility, and 200 mA quiescent bias point-enabling high-efficiency, thermally stable amplification in portable radios.

Does the board include input/output connectors and bias control?

Yes-it features SMA connectors for RFin and RFout, a potentiometer (R2) for precise Idq adjustment, and a dedicated 7.2 V DC input terminal. The schematic (Figure 9) confirms full bias network implementation including gate resistor divider, drain decoupling, and Zener protection (D1), supporting immediate bench testing without external circuitry.

Can STEVAL-TDR027V1 be used for compliance testing?

No-it is a demonstration board, not a certified test instrument. While it delivers accurate RF performance data (harmonics, efficiency, gain flatness) per Doc ID 18109, formal regulatory compliance (e.g., ETSI EN 300 113) requires calibrated test equipment and certified test sites; this board serves only for pre-compliance functional validation.

Is layout documentation available for this evaluation board?

Yes-the official ST document (Doc ID 18109 Rev 1) includes full schematic (Figure 9), component placement diagram (Figure 10), layer stack details (FR-4, 60 mil, 2 oz Cu), and microstrip line dimensions (TL1–TL6). All design files-including Gerber references-are provided to support custom derivative designs and impedance tuning.