STMicroelectronics STEVAL-TDR034V1

Overview

STEVAL-TDR034V1 from STMicroelectronics is a 70 W hybrid RF power module evaluation board for 12.5 V mobile radio transmitters operating in the 380–470 MHz band, featuring a 3-stage amplifier lineup with PD84002, PD85006L-E, and two PD85050S MOSFETs, delivering 50% total efficiency and broadband output power >70 W at 5 dBm input.

For engineers reviewing the STEVAL-TDR034V1 datasheet, STEVAL-TDR034V1 pinout, STEVAL-TDR034V1 application, or STEVAL-TDR034V1 equivalent, this board supports rapid prototyping and system-level validation of high-efficiency UHF power amplifiers in land-mobile radio infrastructure, portable base stations, and broadband repeater designs requiring stable gain, harmonic suppression, and load VSWR tolerance up to 20:1.

Technical Context

The STEVAL-TDR034V1 implements a cascaded three-stage RF power amplifier architecture: first stage uses PD84002 (SOT-89), second stage PD85006L-E (PowerFlat), and final stage dual PD85050S (PSO-10) devices, all N-channel enhancement-mode lateral MOSFETs with zero drain leakage at 12.5 V and gate control current of 3 mA typical at V_GG = 5 V.

It operates under 50 Ω matched conditions with measured 2nd harmonic suppression of –55 dBc, input VSWR ≤3 dB across 380–470 MHz, and maintains stability under extreme load mismatch (VSWR = 20:1) without degradation or oscillation at full 70 W output.

Key Specifications

Availability

STEVAL-TDR034V1 is available at Aetrix Electronics and suitable for UHF mobile radio development, RF power amplifier validation, and broadband repeater system integration requiring stable component supply, traceable sourcing, and long-term design-in support.

Supply support for STEVAL-TDR034V1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, analog ICs, power devices, and RF solutions for industrial, automotive, and communications markets.

This board belongs to ST's RF Power Demonstration Kit product line, engineered specifically to accelerate development of high-efficiency, broadband UHF power amplifiers for professional mobile radio systems and infrastructure equipment.

FAQ

What is the primary function of the STEVAL-TDR034V1 board?

The STEVAL-TDR034V1 is a fully assembled, tested demonstration board implementing a 3-stage 70 W RF power amplifier for 380–470 MHz mobile radio applications. It integrates ST's PD84002, PD85006L-E, and dual PD85050S MOSFETs on FR-4 substrate with optimized layout, matching networks, and bias circuitry to enable immediate RF performance evaluation without custom PCB design.

Does STEVAL-TDR034V1 require external power sequencing or gate voltage control?

No external sequencing is required: the board accepts a single 12.5 V DC supply (V_DD) and uses fixed 5 V gate bias (V_GG) for all MOSFET stages. Gate current draw is only 3 mA typical, enabling direct connection to standard lab power supplies or low-current DC-DC converters without auxiliary regulation.

Can STEVAL-TDR034V1 be used for continuous-wave (CW) or modulated signal testing?

Yes - the board is characterized for CW operation at 70 W output and supports modulated signals including FM, P25, and DMR waveforms. Its thermal design and stability under 20:1 load VSWR ensure reliable operation with peak-to-average power ratio (PAPR) up to 10 dB, provided adequate heatsinking and airflow are maintained per ST's thermal guidelines.

Is the schematic and PCB layout available for reference design reuse?

Yes - ST provides the full schematic (Figure 1), PCB layout (Figure 2), and bill-of-materials (Table 3) in Doc ID 024267 Rev 1. These files are intended for engineering reference and derivative design; however, the PSO-10 and PowerFlat footprints, thermal vias, and RF trace geometry must be reproduced precisely to maintain impedance control and thermal performance.