STMicroelectronics STGAP1BS

Overview

STGAP1BS from STMicroelectronics is a galvanically isolated single-channel IGBT/MOSFET gate driver with AEC-Q100 qualification, 1500 V isolation rating, 5 A sink/source peak output current at 25 °C, ±50 V/ns dV/dt immunity, and 100 ns total propagation delay. It serves as a high-reliability primary-side gate driver in traction inverters for EV/HEV powertrains, supporting rail-to-rail output and negative gate drive capability.

For engineers reviewing the STGAP1BS datasheet, STGAP1BS pinout, STGAP1BS application, or STGAP1BS equivalent, key selection criteria include its programmable SPI-configurable protection thresholds (DESAT, SENSE, 2LTO), dual UVLO/OVLO on both VH/VL and VDD rails, active Miller clamp, and diagnostic status reporting via open-drain outputs and SPI register reads.

Technical Context

The STGAP1BS implements true galvanic isolation between low-voltage logic and high-voltage gate-drive sections using integrated capacitive isolation. Its architecture separates input control, SPI interface, and protection logic (desaturation detection, VCE clamping, 2-level turn-off) from the isolated output stage powered by VH/VL rails up to ±40 V differential.

Protection functions are fully configurable via SPI: DESAT threshold (2.6–10.5 V), SENSE overcurrent trip (88–420 mV), 2LTO voltage/time settings, deadtime (250–1415 ns), and deglitch filter (50–580 ns). All fault events trigger latched diagnostic flags (DIAG1/DIAG2) and force a deterministic safe state: GOFF active, GON high-Z, CLAMP enabled.

Key Specifications

Pinout & Package

STGAP1BS is housed in a SO-24W wide-body package with 2.54 mm pitch, optimized for creepage/clearance compliance (8 mm) in high-voltage industrial and automotive systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with Si827x and UCC5390, STGAP1BS uniquely combines AEC-Q100 qualification, SPI-based full protection configurability, and dual-rail UVLO/OVLO - making it the only option qualified for ASIL-C EV traction inverters requiring field-upgradable safety parameters.

Availability

STGAP1BS is available at Aetrix Electronics and suitable for EV/HEV traction inverters, solar string inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.

Supply support for STGAP1BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade analog devices.

The STGAP1BS belongs to ST's STGAP family of isolated gate drivers, engineered specifically for high-reliability, high-voltage power conversion in electric mobility and renewable energy systems.

FAQ

What is the maximum switching frequency supported by STGAP1BS?

The STGAP1BS supports up to 150 kHz maximum switching frequency under recommended operating conditions. This limit is constrained by thermal dissipation (R_th(JA) = 65 °C/W) and internal power consumption during high-duty-cycle operation. At 100 kHz with 5 A peak drive into 10 nF load, junction temperature remains within 125 °C at 70 °C ambient with standard PCB layout.

How does the active Miller clamp function in STGAP1BS?

The STGAP1BS Miller clamp activates automatically when the CLAMP pin voltage falls below 2.0 V relative to GNDISO, pulling the gate to VL to prevent spurious turn-on during high dV/dt transitions. It operates independently of input signals and remains active during fault conditions, ensuring robust shoot-through prevention in half-bridge topologies without external components.

Can STGAP1BS drive both IGBTs and SiC MOSFETs?

Yes - STGAP1BS is validated for N-channel IGBTs and SiC MOSFETs. Its 5 A sink/source capability, 100 ns propagation delay, and programmable 2LTO enable optimal switching control for both device types. For SiC, the 2LTO function mitigates voltage overshoot during fast turn-off, while DESAT threshold tuning accommodates lower V_CE(sat) and faster fault detection.

What happens during power-up and power-down sequences?

At power-up, STGAP1BS enters a deterministic safe state: GOFF active, GON high-Z, CLAMP enabled - regardless of VH/VL or VDD ramp rates. During power-down, this state persists until supplies fall below UVLO thresholds. The REGERRR and UVLOD flags latch these events, requiring SPI command or SD pin reset to clear before normal operation resumes.