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STMicroelectronics STGAP2GSC
- Part No.:
- STGAP2GSC
- Manufacturer:
- STMicroelectronics
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
STGAP2GSC.pdf
- Description:
- DIGITAL ISO 5KV 1CH GATE DVR 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,254
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Product details
Overview
STGAP2GSC from STMicroelectronics is a galvanically isolated single-channel gate driver IC optimized for enhancement-mode GaN FETs, featuring 2 A source / 3 A sink peak output current at 25 °C, 100 V/ns CMTI, 45 ns total propagation delay, and rail-to-rail outputs in a wide-body SO-8W package. It enables high-efficiency, high-frequency motor inverters and power converters by supporting independent turn-on/turn-off control with dedicated GON/GOFF outputs.
For engineers reviewing the STGAP2GSC datasheet, STGAP2GSC pinout, STGAP2GSC application, or STGAP2GSC equivalent, key selection criteria include GaN-optimized UVLO thresholds (VHon = 4.5 V, VHoff = 4.4 V), dual-input logic polarity support, thermal shutdown (TSD = 170 °C), standby mode (IQDDSBY = 65 µA), and IEC 60747-17/UL 1577 certified isolation (VISO = 3.5 kVRMS).
Technical Context
The STGAP2GSC implements a reinforced capacitive isolation barrier between low-voltage logic inputs (IN+, IN−) and high-side floating gate drive outputs (GON, GOFF), with separate VH supply referenced to GNDISO. Its dual-input architecture supports hardware interlocking and configurable signal polarity, eliminating cross-conduction risk during controller faults.
UVLO is implemented on the VH rail with 100 mV hysteresis (VHon = 4.5 V, VHoff = 4.4 V), ensuring safe gate discharge when supply drops below threshold. The device enters a defined "safe state" (GOFF active, GON high-Z) during UVLO, power-up/down, thermal shutdown, or watchdog timeout-critical for GaN reliability under fast dV/dt transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive | 2 A source / 3 A sink at VH = 6 V, enabling robust GaN switching with <1.5 Ω RDS_ON (GON) and <0.8 Ω RDS_ON (GOFF) |
| CMTI | 100 V/ns - ensures reliable operation in high-noise industrial inverters with fast-switching GaN FETs |
| Propagation Delay | 45 ns max (tDon/tDoff), supporting PWM frequencies up to 2 MHz with minimal timing skew |
| Isolation Rating | VISO = 3.5 kVRMS (60 s), VIORM = 1.2 kVPEAK - certified per IEC 60747-17 and UL 1577 for basic insulation |
| UVLO Threshold | VHon = 4.5 V, VHoff = 4.4 V - precisely matched to GaN FET gate threshold stability and noise immunity |
| Standby Current | IQDDSBY = 65 µA, IQHSBY = 550 µA - reduces idle power in battery-backed or energy-sensitive systems |
| Thermal Protection | TSD = 170 °C with 20 °C hysteresis - prevents irreversible damage during overload or poor heatsinking |
Pinout & Package
STGAP2GSC is housed in a wide-body SO-8W package (7.5 mm × 10.3 mm, 2.5 mm height) with creepage/clearance ≥8 mm and CTI ≥400 V, meeting IEC 60664-1 Material Group II requirements for reinforced isolation.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 VDD | Logic supply input | 5 V tolerant TTL/CMOS interface supply; powers control logic and level shifter |
| 2 IN+ | Active-high logic input | Enables GON when high and IN− low; supports HW interlock with IN− |
| 3 IN− | Active-low logic input | Enables GOFF when high and IN+ low; dual-input truth table prevents shoot-through |
| 4 GND | Logic ground reference | Return path for VDD and logic inputs; must be separated from GNDISO |
| 5 VH | Gate drive supply input | 13 V max positive rail for GON/GOFF; powers isolated output stage and UVLO sensing |
| 6 GON | Source output | Drives GaN gate high (up to VH − 0.12 V); used with external turn-on resistor |
| 7 GOFF | Sink output | Actively pulls GaN gate low (≤80 mV); enables fast, controlled turn-off |
| 8 GNDISO | Isolated gate drive ground | Reference for VH, GON, GOFF; forms isolated side of capacitive barrier |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent outputs (GON/GOFF) | Enables asymmetric gate resistor tuning for optimal GaN dV/dt control and EMI reduction |
| GaN-optimized UVLO | 4.5 V turn-on / 4.4 V turn-off with 100 mV hysteresis prevents false triggering near GaN VGS(th) |
| Hardware interlock via IN+/IN− | Truth table forces safe state (GOFF ON, GON Hi-Z) when both inputs high or both low |
| 100 V/ns CMTI | Maintains signal integrity across isolation barrier in 600 V+ inverter half-bridges with >50 V/ns bus transients |
| Standby mode with wake-up | Reduces system standby power by >90%; exits in ≤35 µs with 1–3 µs wake-up delay |
Applications
| Motor Inverters for Home Appliances | 600 V Industrial Motor Drives |
|---|---|
Use Scenario: Driving BLDC motors in washing machines and HVAC fans using discrete GaN HEMTs. IC Role / Device Role / Timing Role: Isolated gate driver providing independent turn-on/turn-off control to minimize switching losses and audible noise. Use Value: 45 ns propagation delay enables precise 20–100 kHz PWM timing; 100 V/ns CMTI suppresses false triggering during phase-current commutation. | Use Scenario: Half-bridge gate driving in factory automation servo drives with 600 V GaN power stages. IC Role / Device Role / Timing Role: Reinforced-isolation driver delivering 3 A sink current to rapidly discharge GaN gates and prevent shoot-through. Use Value: Dual IN+/IN− inputs implement hardware interlock, eliminating reliance on MCU firmware for fault-safe operation. |
| Wireless Power Transmitters | High-Density DC-DC Converters |
Use Scenario: Resonant LLC gate driving in 15–100 W Qi-compliant wireless charging pads. IC Role / Device Role / Timing Role: High-speed isolated driver synchronizing GaN switches at 300–600 kHz with minimal dead-time uncertainty. Use Value: 2 A source / 3 A sink capability ensures <20 ns rise/fall times into 4.7 nF GaN gate capacitance, reducing conduction loss. | Use Scenario: Primary-side gate driving in 1–3 kW telecom/server DC-DC bricks using 1200 V GaN cascodes. IC Role / Device Role / Timing Role: Isolated buffer translating low-voltage PWM signals across safety barrier while maintaining <8 ns pulse-width distortion. Use Value: Standby current of 65 µA (VDD) + 550 µA (VH) enables ultra-low no-load power in always-on power supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated GaN gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC5870-Q1 | Higher CMTI (150 V/ns), integrated Miller clamp, automotive AEC-Q100 Grade 1 | Targeted for automotive traction inverters; lacks separate GON/GOFF outputs | Select when automotive qualification and Miller clamping are required over independent gate control |
| ADUM4135 | Lower drive strength (4 A peak sink only), no dedicated source output, 50 V/ns CMTI | Designed for SiC MOSFETs; UVLO not optimized for GaN VGS(th) range | Select for cost-sensitive SiC designs where GaN-specific UVLO and dual-output flexibility are unnecessary |
Compared with UCC5870-Q1 and ADUM4135, STGAP2GSC uniquely balances GaN-optimized UVLO, independent GON/GOFF outputs, and 100 V/ns CMTI in a compact SO-8W package-making it ideal for industrial and consumer GaN inverters where layout simplicity and GaN reliability are prioritized over automotive qualification or SiC compatibility.
Availability
STGAP2GSC is available at Aetrix Electronics and suitable for motor inverters for home appliances, 600 V industrial motor drives, and wireless chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STGAP2GSC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog/mixed-signal devices for industrial, automotive, and consumer markets.
The STGAP2GSC belongs to ST's STGAP family of isolated gate drivers-engineered specifically for enhancement-mode GaN FETs, emphasizing high CMTI, GaN-tuned UVLO, and flexible unipolar/bipolar gate drive configurations for high-efficiency power conversion.
FAQ
What is the purpose of the dual IN+ and IN− inputs on STGAP2GSC?
The dual inputs enable hardware-level interlocking and configurable signal polarity: IN+ is active-high and IN− is active-low, with a truth table that forces a safe state (GOFF active, GON high-Z) when both are high or both low. This eliminates shoot-through risk during MCU failure or noise-induced glitches without software intervention.
How does STGAP2GSC's UVLO differ from standard gate drivers?
Its UVLO is specifically tuned for GaN FETs, with turn-on at 4.5 V and turn-off at 4.4 V (100 mV hysteresis), matching the narrow VGS(th) window of enhancement-mode GaN HEMTs. This prevents partial turn-on during supply ramp-up and avoids false triggering from transient noise near the threshold voltage.
Can STGAP2GSC drive both unipolar and bipolar gate configurations?
Yes-it supports both via external circuitry: unipolar uses VH and GNDISO to generate 0–VH gate swing, while bipolar requires an additional negative rail (VL) referenced to GNDISO to achieve −VL to +VH swing. The separate GON (source) and GOFF (sink) outputs allow independent resistor optimization for each polarity transition.
What isolation certifications apply to STGAP2GSC?
It is certified per IEC 60747-17 (basic insulation, certificate #40057398) and recognized under UL 1577 (file E362869), with VISO = 3.5 kVRMS (60 s), VIORM = 1.2 kVPEAK, and VIOTM = 5.0 kVPEAK. Clearance and creepage are ≥8 mm, satisfying reinforced insulation requirements for industrial 600 V systems.
STGAP2GSC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-SOIC (0.295", 7.50mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 100V/ns
- Propagation Delay tpLH / tpHL (Max):
- 50ns, 50ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 30ns, 30ns
- Current - Output High, Low:
- 3A, 3A
- Current - Peak Output:
- 3A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 3.1V ~ 5.5V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 150°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
- Approval Agency:
- VDE
STGAP2GSC FAQ
1.How can I place an order for STGAP2GSC through Aetrix?
Please submit a Request for Quotation (RFQ) for STGAP2GSC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGAP2GSC reliable?
The price and inventory of STGAP2GSC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGAP2GSC is usually 5 days.
3.What payment methods are accepted for STGAP2GSC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGAP2GSC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGAP2GSC?
STGAP2GSC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGAP2GSC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGAP2GSC?
For technical support, including STGAP2GSC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGAP2GSC requirements.
6.How does Aetrix verify that STGAP2GSC is sourced from the original manufacturer or authorized distributors?
All STGAP2GSC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGAP2GSC meets industry standards.
7.What is the process for return or replacement of STGAP2GSC?
All STGAP2GSC units undergo pre-shipment inspection (PSI). If there is an issue with STGAP2GSC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGAP2GSC part is unused and in its original packaging.
Return procedure for STGAP2GSC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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