Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STGAP2SICSAC

Part No.:
STGAP2SICSAC
Manufacturer:
STMicroelectronics
Category:
Isolators - Gate Drivers
Package:
8-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixSTGAP2SICSAC.pdf
Description:
DGTL ISO 3.53KV 1CH GATE DVR 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,246

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STGAP2SICSAC from STMicroelectronics is a galvanically isolated 4 A single-channel SiC MOSFET gate driver in wide-body SO-8W package, featuring 1200 V isolation voltage, 100 V/ns CMTI, 45 ns propagation delay, rail-to-rail output, and dedicated Miller clamp pin - designed for high-reliability 600/1200 V inverters in industrial motor drives and UPS systems.

For engineers reviewing the STGAP2SICSAC datasheet, STGAP2SICSAC pinout, STGAP2SICSAC application, or STGAP2SICSAC equivalent, key selection criteria include SiC-optimized UVLO thresholds (14.5–16.4 V turn-on), dual active-low/high logic inputs with hysteresis, thermal shutdown at 170 °C, standby mode with sub-1 mA total quiescent current, and UL 1577 / VDE 0884-11 certified 6 kV isolation.

Technical Context

The STGAP2SICSAC implements a reinforced capacitive isolation barrier between LV control logic (VDD/GND) and HV floating output stage (VH/GNDISO), enabling safe operation in half-bridge topologies up to 1200 V bus voltage. Its dual-input architecture (IN+, IN−) supports hardware interlocking and deglitch-filtered signal conditioning to prevent cross-conduction.

It integrates a Miller clamp function triggered at 1.3–2.6 V threshold on CLAMP pin, actively sinking gate current during high dV/dt transitions to suppress parasitic turn-on. The device enters a defined "safe state" (GOUT OFF, CLAMP ON) during UVLO, thermal shutdown, watchdog timeout, or standby activation - ensuring fail-safe behavior without external circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Voltage 3535 VRMS (1 min), 6000 VPEAK surge - meets UL 1577 and VDE 0884-11 for reinforced insulation in industrial safety-critical systems
Output Drive Strength 4 A sink/source @25°C - sufficient to drive 1200 V SiC MOSFETs with <100 ns switching times and low gate charge
CMTI 100 V/ns - ensures robust noise immunity in high-speed, high-dV/dt inverter legs with fast SiC switching
Propagation Delay 45 ns typ. (ON/OFF) - enables precise PWM timing control up to 1 MHz switching frequency
UVLO Threshold VHon = 15.6 V ±0.9 V, VHoff = 14.8 V ±0.9 V - optimized for SiC gate drive supply stability and safe turn-off margin
Thermal Protection Shut-down at TJ = 170 °C with 20 °C hysteresis - prevents irreversible damage during overload or cooling failure
Standby Current IQDDSBY = 40–65 µA, IQHSBY = 400–700 µA - reduces idle power in battery-backed or energy-sensitive systems

Pinout & Package

Package: Wide-body SO-8W (8-pin, 7.59 mm × 10.52 mm, creepage/clearance ≥8 mm), RoHS-compliant ECOPACK2, rated for 150 °C max junction temperature and 130 °C/W junction-to-ambient thermal resistance.

Pin/Terminal Circuit Role Design Meaning
1 VDD Logic supply input 5 V tolerant TTL/CMOS interface supply; powers internal logic and level shifter - requires local 100 nF + 1 µF bypass
2 IN+ Active-high logic input Enables GOUT high when IN− is low; used with IN− for HW interlock and polarity selection per truth table
3 IN− Active-low logic input Disables GOUT when high (regardless of IN+); enables hardware dead-time enforcement and fault override
4 GND Logic ground reference Common return for VDD and logic inputs; must be separated from GNDISO by isolation barrier
5 VH High-side gate drive supply Up to 26 V supply for floating output stage; includes SiC-optimized UVLO with 0.75 V hysteresis
6 GOUT Gate drive output Rail-to-rail source/sink output driving SiC MOSFET gate; short-circuit capable up to 4 A
7 CLAMP Miller clamp output Active-low clamp pin that sinks gate current below 1.3–2.6 V threshold to suppress dv/dt-induced turn-on
8 GNDISO Floating ground reference Return path for VH, GOUT, and CLAMP; electrically isolated from GND by reinforced capacitive barrier

Key Features

Feature Design Value
Mechanical isolation integrity 8 mm clearance/creepage, CTI ≥400 V, UL 1577 file E362869 - enables use in IEC 61800-5-1 industrial drive safety architectures
Dual-input control logic Truth-table-defined IN+/IN− states with deglitch filter - eliminates need for external logic or microcontroller-level dead-time management
Fail-safe "safe state" Guaranteed GOUT = OFF + CLAMP = ON during UVLO, thermal shutdown, watchdog loss, or standby - no external pull-down required
SiC-specific UVLO 15.6 V turn-on with 0.75 V hysteresis - avoids marginal gate drive in SiC's narrow VGS window and prevents partial turn-on
Miller clamp precision VCLAMPth = 1.3–2.6 V with 4 A clamp current - matches SiC MOSFET Miller plateau voltage to minimize gate oscillation and EMI

Applications

Industrial Motor Inverters UPS Power Stages

Use Scenario: Driving 1200 V SiC half-bridge modules in servo drives and HVAC compressors operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Isolated gate driver providing 4 A peak current, 45 ns timing accuracy, and Miller clamp to suppress shoot-through during fast SiC switching.

Use Value: Enables >99% efficiency in compact inverters by eliminating external clamp diodes and reducing gate loop inductance via integrated CLAMP pin.

Use Scenario: Controlling bidirectional SiC switches in online double-conversion UPS systems with 400 V DC bus and 50/60 Hz output.

IC Role / Device Role / Timing Role: Galvanically isolated driver delivering rail-to-rail output and 100 V/ns CMTI to maintain timing integrity across noisy AC/DC and DC/AC stages.

Use Value: Ensures uninterrupted power delivery during grid transients by maintaining gate control even under 6 kV surge events on isolated side.

Battery Charging Systems Induction Heating

Use Scenario: Gate driving SiC MOSFETs in 3-phase PFC + LLC resonant stages of EV DC fast chargers (15–30 kW).

IC Role / Device Role / Timing Role: High-CMTI driver supporting 1 MHz PWM with standby mode to reduce idle losses during charging pauses.

Use Value: Reduces system standby power by >80% vs. non-standby drivers, meeting IEC 62301 Class B requirements for energy-efficient chargers.

Use Scenario: Driving resonant half-bridges in 20–100 kHz induction cooktops using 650 V SiC devices with tight thermal constraints.

IC Role / Device Role / Timing Role: Thermally protected driver with 170 °C shutdown and 20 °C hysteresis to sustain continuous high-power bursts without derating.

Use Value: Eliminates need for external thermal sensors and discrete protection circuits, simplifying PCB layout and BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8273AC-B-IS 3.75 kV isolation, 4 A drive, but only 35 V max VH and no dedicated CLAMP pin - relies on external clamp circuit Limited to ≤650 V SiC systems; unsuitable for 1200 V topologies requiring integrated Miller clamp Choose when cost sensitivity outweighs 1200 V capability and CLAMP integration is not required
UCC5870QDWJRQ1 1200 V isolation, 10 A drive, integrated DESAT detection, but 64-pin WQFN package and automotive AEC-Q100 Grade 0 rating Targeted at automotive traction inverters; over-specified for industrial UPS/motor drives with higher cost and layout complexity Choose only if DESAT protection and ASIL-D compliance are mandatory; otherwise STGAP2SICSAC offers better cost/performance fit

Compared with Si8273AC-B-IS, STGAP2SICSAC delivers full 1200 V capability and integrated Miller clamp for simplified half-bridge design; versus UCC5870QDWJRQ1, it provides identical isolation and SiC optimization in a smaller SO-8W footprint at lower system cost for industrial applications.

Availability

STGAP2SICSAC is available at Aetrix Electronics and suitable for industrial motor inverters, UPS power stages, and SiC-based battery chargers requiring stable component supply, long-term lifecycle support, and AEC-Q100 qualified reliability.

Supply support for STGAP2SICSAC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog products for industrial, automotive, and consumer markets.

The STGAP2SICSAC belongs to ST's STGAP family of reinforced-isolation gate drivers, engineered specifically for robust, high-efficiency SiC and GaN power conversion in industrial motor control and power supply applications.

FAQ

What is the purpose of the CLAMP pin on STGAP2SICSAC?

The CLAMP pin provides an active Miller clamp function that sinks gate current when the external SiC MOSFET's gate voltage falls below 1.3–2.6 V. This prevents parasitic turn-on caused by high dv/dt across the Miller capacitance during high-side switch commutation in half-bridge configurations, eliminating the need for external clamp diodes or resistors.

Does STGAP2SICSAC support bipolar gate driving?

Yes - the STGAP2SICSAC supports both unipolar (VH only) and bipolar (VH + VL) gate driving configurations. Its rail-to-rail output and dedicated CLAMP pin enable flexible implementation of negative gate turn-off voltages when paired with an external negative supply, improving SiC MOSFET switching robustness and reducing switching losses.

How does the standby mode reduce power consumption?

In standby mode, STGAP2SICSAC reduces VDD quiescent current to 40–65 µA and VH quiescent current to 400–700 µA while forcing GOUT low and CLAMP high. Entry requires holding IN+ and IN− high for >200 µs; exit requires a specific sequence including a filtered wake-up pulse, enabling ultra-low idle power in intermittent-duty systems like smart chargers.

What safety certifications apply to STGAP2SICSAC?

STGAP2SICSAC is UL 1577 recognized (file E362869), VDE 0884-11 certified for reinforced isolation, and AEC-Q100 qualified. It achieves 6 kV galvanic isolation, 8 mm creepage/clearance, and CTI ≥400 V - meeting IEC 61800-5-1 and IEC 62109 requirements for industrial drive and power supply safety standards.

STGAP2SICSAC Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.295", 7.50mm Width)
Packaging:
Bulk
Product Status:
Active
Technology:
Capacitive Coupling
Number of Channels:
1
Voltage - Isolation:
3530Vrms
Common Mode Transient Immunity (Min):
100V/ns
Propagation Delay tpLH / tpHL (Max):
-
Pulse Width Distortion (Max):
20ns
Rise / Fall Time (Typ):
30ns, 30ns
Current - Output High, Low:
-
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
3.1V ~ 5.25V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Approval Agency:
UL

STGAP2SICSAC FAQ

1.How can I place an order for STGAP2SICSAC through Aetrix?

Please submit a Request for Quotation (RFQ) for STGAP2SICSAC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGAP2SICSAC reliable?

The price and inventory of STGAP2SICSAC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGAP2SICSAC is usually 5 days.

3.What payment methods are accepted for STGAP2SICSAC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGAP2SICSAC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGAP2SICSAC?

STGAP2SICSAC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGAP2SICSAC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGAP2SICSAC?

For technical support, including STGAP2SICSAC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGAP2SICSAC requirements.

6.How does Aetrix verify that STGAP2SICSAC is sourced from the original manufacturer or authorized distributors?

All STGAP2SICSAC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGAP2SICSAC meets industry standards.

7.What is the process for return or replacement of STGAP2SICSAC?

All STGAP2SICSAC units undergo pre-shipment inspection (PSI). If there is an issue with STGAP2SICSAC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGAP2SICSAC part is unused and in its original packaging.

Return procedure for STGAP2SICSAC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGAP2SICSAC Tags

  • STGAP2SICSAC
  • STGAP2SICSAC PDF
  • STGAP2SICSAC Datasheet
  • STGAP2SICSAC Specifications
  • STGAP2SICSAC Images
  • STMicroelectronics
  • STMicroelectronics STGAP2SICSAC
  • Buy STGAP2SICSAC
  • STGAP2SICSAC Price
  • STGAP2SICSAC Distributor
  • STGAP2SICSAC Supplier
  • STGAP2SICSAC Wholesale
Related Products
TLP152(TPL,E
TLP152(TPL,E

Toshiba Semiconductor and Storage

HT0740LG-G
HT0740LG-G

Microchip Technology

FOD8314TR2
FOD8314TR2

onsemi

1EDI60N12AFXUMA1
1EDI60N12AFXUMA1

Infineon Technologies

1EDB7275FXUMA1
1EDB7275FXUMA1

Infineon Technologies

UCC5350MCDR
UCC5350MCDR

Texas Instruments

2EDB7259KXUMA1
2EDB7259KXUMA1

Infineon Technologies

UCC5304DWVR
UCC5304DWVR

Texas Instruments

SI8261BBC-C-ISR
SI8261BBC-C-ISR

Skyworks Solutions Inc.

HT0440LG-G
HT0440LG-G

Microchip Technology

HCPL-0302-500E
HCPL-0302-500E

Broadcom Limited

STGAP2HSCMTR
STGAP2HSCMTR

STMicroelectronics

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER