STMicroelectronics STGAP2SICSACTR

Overview

STGAP2SICSACTR from STMicroelectronics is a galvanically isolated 4 A single-channel SiC MOSFET gate driver in SO-8W package, featuring 1200 V isolation voltage, 100 V/ns CMTI, 45 ns propagation delay, and dedicated Miller clamp pin. It enables high-efficiency, high-reliability half-bridge switching in industrial inverters and EV charging systems.

For engineers reviewing the STGAP2SICSACTR datasheet, STGAP2SICSACTR pinout, STGAP2SICSACTR application, or STGAP2SICSACTR equivalent, key selection criteria include SiC-optimized UVLO thresholds (14.5–16.4 V turn-on), rail-to-rail 4 A sink/source output, dual active-low/active-high inputs for hardware interlock, and thermal shutdown at 170 °C.

Technical Context

The device implements dual-input logic control with deglitch filtering and truth-table-defined output behavior (IN+ = H, IN− = L → GOUT = HIGH), enabling hardware-level cross-conduction prevention. Its isolated floating section integrates level-shifting, UVLO monitoring on VH, and watchdog supervision of LV-side communication.

Miller clamp activation occurs when gate voltage falls below 1.3–2.6 V (VCLAMPth), providing low-impedance discharge path during high-dV/dt commutation. Standby mode reduces quiescent current to 40 µA (VDD) and 400 µA (VH) while forcing GOUT OFF and CLAMP ON.

Key Specifications

Pinout & Package

SO-8W wide-body surface-mount package (7.59 mm × 10.32 mm, 2.64 mm height) with 8 mm creepage/clearance, UL 1577 recognized, and ECOPACK2 environmental compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated SiC gate driver applications.

Compared with Si8273ACD-IS and UCC5870QDWJRQ1, STGAP2SICSACTR delivers a balanced integration of Miller clamp flexibility, SiC-specific UVLO, and ultra-low standby power - making it optimal for cost-sensitive, thermally constrained industrial inverters where pin-level control of clamp behavior is required.

Availability

STGAP2SICSACTR is available at Aetrix Electronics and suitable for industrial motor drives, EV battery chargers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q100 qualified reliability.

Supply support for STGAP2SICSACTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog components for automotive, industrial, and consumer markets.

STGAP2SICSACTR belongs to ST's STGAP family of isolated gate drivers, engineered specifically for silicon carbide (SiC) MOSFETs in high-voltage, high-frequency power conversion systems demanding robustness, precision, and integration.

FAQ

What is the purpose of the CLAMP pin, and how does it differ from standard gate clamping?

The CLAMP pin provides an externally accessible, actively controlled Miller clamp path that engages when gate voltage falls below 1.3–2.6 V (adjustable via external resistor network). Unlike passive diode-based clamps, this dedicated terminal allows precise threshold tuning and low-impedance (<2 Ω) discharge during high-dv/dt switching, preventing false turn-on in half-bridge SiC configurations without adding external FETs or diodes.

Can STGAP2SICSACTR drive both unipolar and bipolar gate voltages for SiC MOSFETs?

Yes - the device supports both unipolar (e.g., 0 V / +20 V) and bipolar (e.g., −5 V / +20 V) gate drive schemes. VH supplies the positive rail, while a separate negative supply can be connected to GNDISO to establish negative turn-off voltage. The rail-to-rail output stage and independent UVLO on VH enable seamless configuration without redesigning the driver interface.

How does the standby mode affect output behavior and recovery timing?

In standby mode, both IN+ and IN− held HIGH for >200 µs force GOUT to OFF and CLAMP to ON while reducing VDD and VH quiescent currents to 40 µA and 400 µA respectively. Recovery requires a valid input transition (e.g., IN+ = H, IN− = L) held for >200 ns, followed by <200 µs wake-up delay before GOUT responds - ensuring glitch-free reactivation in real-time control loops.

Is STGAP2SICSACTR compatible with 3.3 V microcontrollers, and what input protection is provided?

Yes - its 3.3 V/5 V TTL/CMOS-compatible inputs include built-in hysteresis (≈0.3×VDD), 60–160 kΩ pull-down resistors, and ±2 kV HBM ESD protection. Input thresholds scale with VDD (e.g., Vil = 0.29×VDD, Vih = 0.58×VDD), ensuring robust noise immunity and direct interfacing with STM32, TI C2000, or Infineon XMC MCUs without level-shifting circuitry.